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| HMC356LP3 / 356LP3E v02.0605 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 350 - 550 MHz 5 AMPLIFIERS - SMT Typical Applications The HMC356LP3 / HMC356LP3E is ideal for basestation receivers: * GSM 450 & GSM 480 * CDMA 450 * Private Land Mobile Radio Features Noise Figure: 1.0 dB +38 dBm Output IP3 Gain: 17 dB Very Stable Gain vs. Supply & Temperature Single Supply: +5.0V @ 104 mA 50 Ohm Matched Output Functional Diagram General Description The HMC356LP3 & HMC356LP3E are high dynamic range GaAs PHEMT MMIC Low Noise Amplifiers is ideal for GSM & CDMA cellular basestation and Mobile Radio front-end receivers operating between 350 and 550 MHz. This LNA has been optimized to provide 1.0 dB noise figure, 17 dB gain and +38 dBm output IP3 from a single supply of +5.0V @ 104 mA. Input and output return losses are 15 dB typical, with the LNA requiring only four external components to optimize the RF input match, RF ground and DC bias. The HMC356LP3 & HMC356LP3E share the same package and pinout with the HMC372LP3 high IP3 LNA. A low cost, leadless 3x3 mm (LP3) SMT QFN package houses the low noise amplifier. Electrical Specifications, TA = +25 C, Vs = +5V Parameter Frequency Range Gain Gain Variation Over Temperature Noise Figure Input Return Loss Output Return Loss Reverse Isolation Output Power for 1dB Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept (IP3) (-20 dBm Input Power per tone, 1 MHz tone spacing) Supply Current (Idd) 34 17 15 Min. Typ. 350 - 550 17 0.0032 1.0 17 12 24 21 22.5 38 104 0.010 1.4 Max. Units MHz dB dB / C dB dB dB dB dBm dBm dBm mA 5 - 90 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC356LP3 / 356LP3E v02.0605 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 350 - 550 MHz Broadband Gain & Return Loss 25 20 15 RESPONSE (dB) 10 5 0 -5 -10 -15 -20 -25 0.25 0.5 0.75 1 1.25 1.5 FREQUENCY (GHz) 1.75 2 S21 S11 S22 Noise Figure vs. Temperature 1.5 1.4 1.3 NOISE FIGURE (dB) 1.2 1.1 1 0.9 0.8 0.7 0.6 0.5 0.3 0.35 0.4 0.45 0.5 0.55 0.6 +25 C +85 C -40 C 5 AMPLIFIERS - SMT 5 - 91 FREQUENCY (GHz) Gain vs. Temperature 20 19 18 17 GAIN (dB) 16 15 14 13 12 11 10 0.3 0.35 0.4 0.45 0.5 FREQUENCY (GHz) 0.55 0.6 +25 C +85 C -40 C Noise Figure vs. Vdd 1.5 1.4 1.3 NOISE FIGURE (dB) 1.2 1.1 1 0.9 0.8 0.7 0.6 0.5 0.3 0.35 0.4 0.45 0.5 0.55 0.6 +4.5 V +5.0 V +5.5 V FREQUENCY (GHz) Gain vs. Vdd 20 19 18 Reverse Isolation 0 -5 ISOLATION (dB) -10 -15 -20 -25 -30 +25 C +85 C -40 C 17 GAIN (dB) 16 15 14 13 12 11 10 0.3 0.35 0.4 0.45 0.5 FREQUENCY (GHz) 0.55 0.6 +5.0 V +4.5 V +5.5 V 0.3 0.35 0.4 0.45 0.5 FREQUENCY (GHz) 0.55 0.6 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC356LP3 / 356LP3E v02.0605 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 350 - 550 MHz 5 AMPLIFIERS - SMT Input Return Loss vs. Temperature 0 Output Return Loss vs. Temperature 0 -5 RETURN LOSS (dB) +25 C +85 C -40 C -5 RETURN LOSS (dB) +25 C +85 C -40 C -10 -10 -15 -15 -20 -20 -25 0.3 0.35 0.4 0.45 0.5 FREQUENCY (GHz) 0.55 0.6 -25 0.3 0.35 0.4 0.45 0.5 FREQUENCY (GHz) 0.55 0.6 Output IP3 vs. Temperature 42 41 P1dB & Psat vs. Temperature 26 25 COMPRESSION (dBm) 24 23 22 21 20 19 18 17 16 0.3 0.35 0.4 0.45 0.5 0.55 0.6 P1dB +25 C +85 C -40 C PSAT 40 OUTPUT IP3 (dBm) 39 38 37 36 35 34 33 32 0.3 0.35 0.4 0.45 0.5 FREQUENCY (GHz) 0.55 0.6 +25 C +85 C -40 C FREQUENCY (GHz) Output IP3 vs. Vdd 42 41 P1dB vs. Vdd 26 25 COMPRESSION (dBm) 24 23 22 21 20 19 18 17 16 0.3 0.35 0.4 0.45 +4.5 V +5.0 V +5.5 V 40 OUTPUT IP3 (dBm) 39 38 37 36 35 34 33 32 0.3 0.35 0.4 0.45 0.5 FREQUENCY (GHz) 0.55 0.6 +4.5 V +5.0 V +5.5 V 0.5 0.55 0.6 FREQUENCY (GHz) 5 - 92 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC356LP3 / 356LP3E v02.0605 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 350 - 550 MHz Typical Supply Current vs. Vdd Vdd (Vdc) +4.5 +5.0 +5.5 Idd (mA) 103 104 105 Absolute Maximum Ratings Drain Bias Voltage (Vdd) RF Input Power (RFin)(Vdd = +5.0 Vdc) Channel Temperature Continuous Pdiss (T = 85 C) (derate 14 mW/C above 85 C) Thermal Resistance (channel to ground paddle) Storage Temperature Operating Temperature +8.0 Vdc +15 dBm 150 C 0.910 W 71.4 C/W -65 to +150 C -40 to +85 C 5 AMPLIFIERS - SMT 5 - 93 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE 4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM. PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM. 5. PACKAGE WARP SHALL NOT EXCEED 0.05mm. 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED LAND PATTERN. Package Information Part Number HMC356LP3 HMC356LP3E Package Body Material Low Stress Injection Molded Plastic RoHS-compliant Low Stress Injection Molded Plastic Lead Finish Sn/Pb Solder 100% matte Sn MSL Rating MSL1 MSL1 [1] Package Marking [3] 356 XXXX 356 XXXX [2] [1] Max peak reflow temperature of 235 C [2] Max peak reflow temperature of 260 C [3] 4-Digit lot number XXXX For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC356LP3 / 356LP3E v02.0605 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 350 - 550 MHz 5 AMPLIFIERS - SMT Pin Descriptions Pin Number 1, 5, 8, 9,10,12,13,14 Function N/C Description No connection necessary. These pins may be connected to RF/DC ground. These pins and package ground paddle must be connected to RF/DC ground. This pin is matched to 50 Ohms with a 51 nH inductor to ground. See Application Circuit. Interface Schematic 2, 4, 6,16 GND 3 RF IN 7 ACG AC Ground - An external capacitor of 0.01F to ground is required for low frequency bypassing. See Application Circuit for further details. 11 RF OUT This pin is AC coupled and matched to 50 Ohms. 15 Vdd Power supply voltage. Choke inductor and bypass capacitor are required. See application circuit. Application & Evaluation PCB Circuit Note 1: Choose value of capacitor C1 for low frequency bypassing. A 0.01 F 10% capacitor is recommended. Note 2: L1, L2 and C1 should be located as close to pins as possible. 5 - 94 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC356LP3 / 356LP3E v02.0605 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 350 - 550 MHz Evaluation PCB 5 AMPLIFIERS - SMT List of Materials for Evaluation PCB 107795 Item J1 - J2 J3 - J4 C1 C2 L1 L2 U1 PCB [2] Description PCB Mount SMA RF Connector DC Pin 10,000 pF Capacitor, 0402 Pkg. 10,000 pF Capacitor, 0603 Pkg. 51 nH Inductor, 0402 Pkg. 36 nH Inductor, 0603 Pkg. HMC356LP3 / HMC356LP3E Amplifier 106722 Eval Board [1] The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of VIA holes should be used to connect the top and bottom ground planes. The evaluation circuit board shown is available from Hittite upon request. [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 5 - 95 |
Price & Availability of HMC356LP306
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