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NCBSE1 5HI24R5 PN513411 DS1236 E5116A B5923B 42S16400 KU5N12
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  Datasheet File OCR Text:
 SBP1620 THRU SBP16100
Features
* Plastic Package has Underwriters Laboratory Flammability Classification 94V-0 * Metal silicon junction, majority carrier conduction * Guard ring for overvoltage protection * Low power loss, high efficiency * High current capability, Low forward voltage drop * High surge capability * For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications * Dual rectifier construction * High temperature soldering guaranteed: 250E /10 seconds, 0.25" (6.35mm) from case
CURRENT 16.0Amperes VOLTAGE 20 to 100 Volts
ITO-220
10 0.5 3.2
0.2 0.1
4.5 0.2 6.4 0.1
2.7 0.2
2.7 0.2
0. 2
3.7
Mechanical Data
* Case : JEDEC ITO-220 molded plastic body * Terminals : Lead solderable per MIL-STD-750, Method 2026 * Polarity : As marked. No suffix indicates Common Cathode, suffix "A" indicates Common Anode * Mounting Position : Any * Weight : 0.08ounce, 2.24 grams
2.54
0.2
0.7 2.54
0.2 0.2
13Min
1.3 0.2
15 0.3
0.5 2.4 PIN 1 PIN 3 Negative CT Suffix "A"
0.2 0.2
PIN 1 PIN 3 Positive CT Suffix "C"
+ CASE PIN 2
CASE PIN 2
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
(Ratings at 25E ambient temperature unless otherwise specified, single phase, half wave, resistive or inductive load. For capacitive load, derate by 20%)
Symbols Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current at Tc=95E Repetitive peak forward current(square wavr, 20KHZ) at Tc=105E Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC method) Maximum instantaneous forward voltage at 8.0A (Note 1) Maximum instantaneous reverse current at rated DC blocking voltage (Note1) Typical thermal resistance (Note 2) Operating junction temperature range Storage temperature range TA=25E TA=125E IR Re JC TJ TSTG -65 to +125 -65 to +150 30 5.0 -65 to +150 VRRM VRMS VDC I(AV) IFRM IFSM
SBP 1620 20 SBP 1630 30 SBP 1640 40 SBP 1650 50 SBP 1660 60 SBP 1680 80 SBP 16100 100
Units Volts Volts Volts Amps Amps Amps
14 20
21 30
28 40
35 50 16.0 32.0 150.0
42 60
56 80
70 100
VF
0.65 1.0
0.75
0.80
0.85
Volts mA E /W E E
50
Notes:
(1) Pulse test: 300iS pulse width, 1% duty cycle (2) Thermal resistance from junction to case
RATINGS AND CHARACTERISTIC CURVES SBP1620 THRU SBP16100
FIG.1-FORWARD CURRENT DERATING CURVE FIG.2-TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS
40 INSTANTANEOUS FORWARD CURRENT (AMPERES)
| | SBP1620-SBP1640 - - - SBP1650-SBP16100
AVERAGE FORWARD CURRENT AMPERES
20 16 12 8.0 4.0 0 0 50
SINGLE PHASE HALF WAVE 50Hz INDUCTIVE OR RESISTIVE LOAD
TC=125E
TC=25E
100
150
LEAD TEMPERATURE (E )
1.0
PULSE WIDTH=300A
1% DUTY CYCLE
FIG.4-TYPICAL JUNCTION CAPACITANCE
4000 2000 CAPACITANCE(pF) 1000
| | SBP1650-SBP16100 - - - SBP1620-SBP1640
0.1 2 3 4 5 6 7 8 9 10
INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
FIG.3-TYPICAL REVERSE CHARACTERISTICS
200 100 0.1 0.4 1.0 10 40 60 100
TC=125E
100
INSTANTANEOUS REVERSE CURRENT MILL (AMPERES)
REVERSE VOLTAGE(VOLTS)
10
FIG.5-MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT
150 PEAK FORWARD SURGE CURRENT(AMPERES) 125 100 75 50 25 1.0 2.0 5.0 10 20 50 100 NUMBER OF CYCLES AT 60Hz
8.3ms SINGLE HALF SINE-WAVE (JEDEC Method)
TC=75E
1.0
TC=25E
0.1
0.01
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE


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