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AEGIS SEMICONDUTORES LTDA. A5A:1650.XX VOLTAGE RATINGS Part Number A5A:1650.02 A5A:1650.04 A5A:1650.06 A5A:1650.08 A5A:1650.10 A5A:1650.12 VRRM , VR (V) Max. rep. peak reverse voltage TJ = 0 to 180OC 200 400 600 800 1000 1200 TJ = -40 to 0OC 200 400 600 800 1000 1200 VRSM , VR (V) Max. non-rep. peak reverse voltage TJ = 25 to 180OC 300 500 700 900 1100 1300 MAXIMUM ALLOWABLE RATINGS PARAMETER TJ Junction Temperature Tstg Storage Temperature IF(AV) Max. Av. current @ Max. TC VALUE -40 to 180 -40 to 180 1300 125 2625 18.0 IFSM Max. Peak non-rep. surge current 18.9 kA 21.5 22.5 1630 I2t Max. I2t capability 1490 2310 2110 I2t1/2 Max. I2t1/2 capability F Mounting Force 23100 1550 kA2s1/2 N.m kA2s 50 Hz half cycle sine wave 60 Hz half cycle sine wave t = 10ms t = 8.3 ms t = 10ms Initial T J = 180 C, no voltage applied after surge. O O UNITS O O NOTES 180 half sine wave 50 Hz half cycle sine wave 60 Hz half cycle sine wave Initial T J = 180 C, rated VRRM applied after surge. Initial T J = 180 C, no voltage applied after surge. Initial T J = 180 C, rated VRRM applied after surge. O O O O C C A C A IF(RMS) Nom. RMS current t = 8.3 ms O Initial T J = 180 C, no voltage applied after surge. I2t for time t x = I2t1/2 * tx1/2. (0.1 < tx < 10ms). - AEGIS SEMICONDUTORES LTDA. A5A:1650.XX CHARACTERISTICS PARAMETER VFM Peak forward voltage VF(TO)1 Low-level threshold VF(TO)2 High-level threshold rF1 Low-level resistance rF2 High-level resistance IRM Peak reverse current RthJC Thermal resistance, junction-to-case RthCS Thermal resistance, case-to-sink wt Weight Case Style MIN. ----------------------TYP. 1.45 --------30 --------255(9) TO-200AC MAX. UNITS 1.63 0.794 0.857 0.195 0.170 60 0.035 0.039 0.040 0.015 --O TEST CONDITIONS Initial T J = 25 C, 50-60Hz half sine, Ipeak = 4084A. TJ = 180 O C Av. power = V F(TO) * IF(AV) +rF * [IF(RMS)]2 Use low values for IFM < pIF(AV) TJ = 180 C. Max. rated VRRM O O V V mW mA O O C/W DC operation, double side C/W 180O sine wave, double side C/W 120O rectangular wave, duble side Mtg. Surface smooth, flat and greased. Double side O C/W cooled. g(oz.) ----- 180 Maximum Allowable Case Temperature Maximum Allowable Case Temperature (C) Maximum Allowable Case Temperature 180 170 160 150 140 130 120 110 100 90 0 500 1000 1500 2000 2500 *Rectangular waveform 30 60 90 120 180 DC Maximum Allowable Case Temperature (C) 170 160 150 140 130 120 110 100 90 0 200 400 600 800 1000 1200 1400 1600 1800 *Sinusoidal waveform 30 60 90 120 180 Average Forward Current (A) Average Forward Current (A) Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics AEGIS SEMICONDUTORES LTDA. A5A:1650.XX Maximum Average Forward Power Loss Maximum Average Forward Power Loss Maximum Average Forward Power Loss (W) 20000 30 Maximum Average Forward Power Loss (W) 25000 30 20000 15000 15000 60 10000 60 10000 90 120 90 120 5000 180 5000 180 DC 0 *Sinusoidal waveform 0 0 500 1000 1500 2000 2500 *Rectangular waveform 0 500 1000 1500 2000 2500 Average Forward Current (A) Average Forward Current (A) Fig. 3 - On-State Power Loss Characteristics Fig. 4 - On-State Power Loss Characteristics Forward Voltage Drop 10000 0.1 Transient Thermal Impedance ZthJC Transient Thermal Impedance ZthJC (C/W) Instantaneous Forward Current (A) 1000 0.01 125C 100 0.5 25C 1.0 1.5 2.0 2.5 3.0 1E-3 1E-3 0.01 0.1 1 10 Instantaneous Forward Voltage (V) Time (s) Fig. 5 - Forward Voltage Drop Characteristics Fig. 6 - Transient Thermal Impedance Characteristics AEGIS SEMICONDUTORES LTDA. A5A:1650.XX TO-200AC Fig. 7 - Outline Characteristics |
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