 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| AEGIS SEMICONDUTORES LTDA. A5N:3000.XXH VOLTAGE RATINGS Part Number VRRM , VR (V) Max. rep. peak reverse voltage TJ = 0 to 125OC A5N:3000.16H A5N:3000.18H A5N:3000.20H A5N:3000.22H 1600 1800 2000 2200 TJ = -40 to 0OC 1600 1800 2000 2200 VRSM , VR (V) Max. nonrep. peak reverse voltage TJ = 25 to 125 OC 1700 1900 2100 2300 MAXIMUM ALLOWABLE RATINGS PARAMETER TJ Junction Temperature Tstg Storage Temperature @ Max. TC IF(RMS) Nom. RMS current IF(AV) Max. Av. current VALUE -40 to 125 -40 to 150 3000 70 4700 53.3 IFSM Max. Peak non-rep. surge current 56 KA 63.3 66.5 12020 13065 I2t Max. I2t capability 16992 18470 It 2 1/2 UNITS O O NOTES 180O half sine wave 50 Hz half cycle sine wave 60 Hz half cycle sine wave 50 Hz half cycle sine wave 60 Hz half cycle sine wave t = 10ms Initial T J = 125OC, rated VRRM applied after surge. O C C C A O A Initial T J = 125 C, no voltage applied after surge. Initial T J = 125OC, rated VRRM applied after surge. O kA2s t = 8.3 ms t = 10ms Initial T J = 125 C, no voltage applied after surge. Max. I t 2 1/2 capability 202350 kA2s1/2 t = 8.3 ms O Initial T J = 125 C, no voltage applied after surge. I2t for time t x = I2t1/2 * tx1/2. (0.1 < tx < 10ms). TJ = 125OC, VD = VDRM, ITM = 1600A. Gate pulse: 20V, 20 W, 10ms, 0.5ms rise time, Max. repetitive di/dt is aproximately O 40% of non-repetitive value. tp < 5 ms tp < 5 ms Non lubricated threads di/dt Max. Non-repetitive rate-ofrise current PGM Max. Peak gate power PG(AV) Max. Av. gate power +IGM Max. Peak gate current -VGM Max. Peak negative gate voltage F Mounting Force 800 A/ms 16 3.0 4 15 4550 W W A V N.m AEGIS SEMICONDUTORES LTDA. A5N:3000.XXH CHARACTERISTICS PARAMETER VTM peak on-state voltage VT(TO)1 Low-level threshold VT(TO)2 High-level threshold rT1 Low-level resistance rT2 High-level resistance IL Latching current IH Holding current td Delay time tq Turn-off time MIN. ----------------TYP. 1.54 --------270 100 0.5 MAX. UNITS 1.62 0.921 0.737 0.079 0.063 --500 1.5 V V mW mA mA ms ms TEST CONDITIONS O Initial T J = 25 C, 50-60Hz half sine, Ipeak = 9425A. O TJ = 125 C Av. power = V T(TO) * IT(AV) +rT * [IT(RMS)]2 Use low values for ITM < p rated IT(AV) TC = 25OC, 12V anode. Gate pulse: 10V, 20 W, 100ms. TC = 25OC, 12V anode. Initial IT = 10A. TC = 25OC, VD = rated VDRM, 50A resistive load. Gate pulse: 10V, 20W, 10ms, 1ms rise time. TJ = 125 C, ITM = 500A, di/dt = 25A/ms, VR = 50V. dv/dt = 200 V/ms lin. To 80% rated V DRM. Gate: 0V, 100 W. TJ = 125OC. Exp. to 100% or lin. Higher dv/dt values To 80% V DRM, gate open. avaliable. TJ = 125 OC, Exp. To 67% V DRM, gate open. mA mA V TJ = 125OC, Rated VRRM and VDRM, gate open. TC = -40OC TC = 25 C TC = -40OC O O --- --- 100 dv/dt Critical rate-of-rise of off-state voltage IRM, IDM Peak reverse and offstate current IGT DC gate current to trigger VGT DC gate voltage to trigger VGD DC gate voltage not to trigger RthJC Thermal resistance, junction-to-case RthCS Thermal resistance, case-to-sink wt Weight Case Style 500 1000 ----75 ----------------- 700 --80 --150 --1.2 ----------1590 (56) TO-200AE ----200 500 250 3.3 2.5 0.3 0.011 0.012 0.013 0.006 --- V/ms +12V anode-to-cathode. For recommended gate drive see "Gate Characteristics" figure. TC = 25OC TC = 25OC, Max. Value which will not trigger with rated VDRM V O anode-to-cathode. O C/W DC operation. O O C/W 180 sine wave, double side coolde. O O C/W 120 rectangular wave, double side cooled. O C/W Mtg. Surface smooth, flat and greased. ----- g(oz.) JEDEC Maximum Allowable Case Temperature 125 Maximum Allowable Case Temperature 125 Maximum Allowable Case Temperature (C) Maximum Allowable Case Temperature (C) 120 115 110 105 100 95 90 85 80 75 70 0 500 1000 1500 2000 2500 *Sinusoidal waveform 30 60 90 120 180 120 115 110 105 100 95 90 85 60 30 80 90 75 70 *Rectangular waveform 120 180 DC 3000 3500 0 500 1000 1500 2000 2500 3000 3500 4000 4500 Average Forward Current (A) Average Forward Current (A) Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics AEGIS SEMICONDUTORES LTDA. A5N:3000.XXH Maximum Average Forward Power Loss 30000 30 Maximum Average Forward Power Loss 35000 Maximum Average Forward Power Loss (W) 30000 25000 20000 60 Maximum Average Forward Power Loss (W) 25000 30 20000 15000 60 15000 90 90 10000 10000 5000 0 0 500 120 180 120 180 5000 DC 0 0 500 1000 1500 2000 2500 3000 3500 4000 4500 5000 *Rectangular waveform 1000 1500 2000 2500 3000 3500 4000 4500 5000 *Sinusoidal waveform Average Forward Current (A) Average Forward Current (A) Fig. 3 - Forward Power Loss Characteristics Forward Voltage Drop 10000 Fig. 4 - Forward Power Loss Characteristics Transient Thermal Impedance ZthJC Transient Thermal Impedance ZthJC (C/W) Instantaneous Forward Current (A) 10-2 1000 125C 25C 100 0.5 1.0 1.5 2.0 2.5 3.0 10-3 10-3 10-2 10-1 100 101 Instantaneous Forward Voltage (V) Time (s) Fig. 5 - Forward Voltage Drop Characteristics Fig. 6 - Transient Thermal Impedance Characteristics AEGIS SEMICONDUTORES LTDA. A5N:3000.XXH 100 Rectangular gate pulse a) Recommended load line for rated di/dt: 20V, 10W; tr<=1ms. b)Recommended load line for <=30% rated di/dt: 10V, 10W; tr<=1ms. Gate Characteristics (1) PGM = 10W, tp = 4ms (2) PGM = 20W, tp = 2ms (3) PGM = 40W, tp = 1ms Instantaneous Gate Voltage (V) 10 (b) (a) TJ = -40C T = 25C 1 TJ = 125C (1) (2) (3) VGD IGD 0.1 1E-3 Frequency Limited by PG(Av) 0.01 0.1 1 10 100 Instantaneous Gate Current (A) Fig. 7 - Gate Trigger Characteristics TO-200AE Fig. 8 - Outline Characteristics |
Price & Availability of A5N320010
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |