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| MICROWAVE CORPORATION HMC121 General Description The HMC121 chip is an absorptive voltage variable attenuator. It features an on-chip reference attenuator for use with an external op-amp to provide simple single voltage attenuation control. The device is ideal in designs where analog control signal must control RF signal levels over a 30 dB range, such as AGC circuits and in temperature compensation of multiple gain stages. Applications include military ECM and communications as well as commercial microwave radios and VSAT. See SMT packaged version HMC121G8 (hermetic). GaAs MMIC VOLTAGE-VARIABLE ATTENUATOR DC - 15 GHz SEPTEMBER 1999 Features WIDE BANDWIDTH: DC - 15 GHZ LOW PHASE SHIFT VS. ATTENUATION 2 Attenuators 30 dB ATTENUATION RANGE SIMPLIFIED VOLTAGE CONTROL Guaranteed Performance, 50 ohm system, -55 to +85 deg C Parameter Insertion Loss Attenuation Range Return Loss Switching Characteristics DC - 8 GHz: DC - 15 GHz: tRISE, tFALL ( 10/90% RF): tON, tOFF (50% CTL to 10/90% RF): Min. Atten: Atten. > 2dB: Min. Atten: Atten. > 2dB: DC - 8 GHz: DC - 15 GHz: 25 13 10 Min. Typ. 1.8 2 30 18 15 3 6 +10 -2 +25 +10 Max. 2.8 3.5 Units dB dB dB dB dB ns ns dBm dBm dBm dBm Input Power for 0.25dB Comp. ( 0.5 - 15 GHz) Input Third Order Intercept (two - 8 dBm signals 0.5 - 15 GHz) 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com 2-6 MICROWAVE CORPORATION HMC121 VOLTAGE-VARIABLE ATTENUATOR DC - 15 GHz SEPTEMBER 1999 Insertion Loss 0 -1 Relative Attenuation 0 INSERTION LOSS (dB) -2 ATTENUATION (dB) -10 -20 -3 -4 -5 0 2 4 6 8 10 12 14 16 2 Attenuators -30 -40 0 2 4 6 8 10 FREQUENCY (GHz) 12 14 16 FREQUENCY (GHz) Return Loss 0 Relative Attenuation vs. Control Voltage 0 -0.5 -1 -1.5 -2 -2.5 -3 V1 V2 CONTROL VOLTAGE RETURN LOSS (dB) -10 -20 -30 0 2 4 6 8 10 12 14 16 0 5 FREQUENCY (GHz) 10 15 20 25 RELATIVE ATTENUATION (dB) 30 Relative Phase 90 RELATIVE PHASE (DEG) 70 50 30 20 dB 10 dB 10 -10 0 2 4 6 8 10 12 14 16 FREQUENCY (GHz) 1 dB and 3 dB 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com 2-7 MICROWAVE CORPORATION HMC121 VOLTAGE-VARIABLE ATTENUATOR DC - 15 GHz SEPTEMBER 1999 Schematic 50 50 Single-Line Control Driver RF2 50 50 RF1 RF1 RF2 2 500 500 500 500 500 500 500 Attenuators V2 500 I O V1 CTL +5V 1N4148 500 V2 I (BACKSIDE IS GND) O V1 3.9K 500 3.9K TL321 OR EQUIVALENT -5V External op-amp control circuit maintains impedance match while attenuation is varied. Input control ranges from 0 Volts (min. attenuation) to -2.5 Volts (max. attenuation.) Outline Drawing Absolute Maximum Ratings RF Input Control Voltage Range 0.87 (0.034) +16dBm +1.0 to -6.0 Vdc -65 to +150 deg C -55 to +125 deg C Storage Temperature Operating Temperature PORT RF2 0.12 (0.005) PORT RF1 1.10 (0.043) 0.67 (0.026) V2 Hittite V1 PORT V1 ALL TOLERANCES ARE: 0.025 (0.001) DIE THICKNESS IS 0.10 (0.004), BACKSIDE IS GROUND BOND PADS ARE 0.10 (0.004) SQUARE ALL DIMENSIONS IN MILLIMETERS (INCHES) BACKSIDE METALLIZATION: GOLD BOND PAD METALLIZATION: GOLD 0.09 (0.003) 0.21 (0.008) 0.24 (0.009) 0.39 (0.015) 0.54 (0.021) PORT O PORT I PORT V2 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com 2-8 MICROWAVE CORPORATION HMC121 VOLTAGE-VARIABLE ATTENUATOR DC - 15 GHz SEPTEMBER 1999 Handling Precautions Follow these precautions to avoid permanent damage. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: Follow ESD precautions to protect against > 250V ESD strikes. ( see page 8 - 2 ) Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. 2 Attenuators Mounting The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 deg. C and a tool temperature of 265 deg. C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 deg. C. DO NOT expose the chip to a temperature greater than 320 deg. C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer's schedule. Wire Bonding Ball or wedge bond with 1.0 diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of 150 deg. C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package. RF bonds should be as short as possible. 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com 2-9 |
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