 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| TSSP4400 GaAs/GaAlAs Infrared Emitting Diode in Sideview Package Description TSSP4400 is a high intensity infrared emitting diode in GaAlAs on GaAs technology, molded in a clear, blue- grey tinted plastic package with spherical side view lens. The device is spectrally matched to silicon photodiodes and phototransistors. Features D D D D D D High radiant power and high radiant intensity Suitable for high pulse current operation Low forward voltage Angle of half intensity = 22 Peak wavelength lp = 925 nm High reliability 94 8491 Applications High power infrared emitter in light curtains, light barriers, transmissive or reflective sensors in combination with PIN photodiodes or phototransistors. Infrared remote control and free air transmission systems for long transmission distance and medium wide angle requirements in combination with PIN photo diodes or photo modules. Suitable as replacement of CQX47. Absolute Maximum Ratings Tamb = 25_C Parameter Reverse Voltage Forward Current Peak Forward Current Surge Forward Current Power Dissipation Junction Temperature Operating Temperature Range Storage Temperature Range Soldering Temperature Thermal Resistance Junction/Ambient Test Conditions Symbol VR IF IFM IFSM PV Tj Tamb Tstg Tsd RthJA Value 5 100 200 2.0 170 100 -55...+100 -55...+100 260 450 Unit V mA mA A mW C C C C K/W tp/T=0.5, tp=100 ms tp=100 ms t x 5sec, 2 mm from case TELEFUNKEN Semiconductors Rev. A3, 16-Oct-96 1 (5) TSSP4400 Basic Characteristics Tamb = 25_C Parameter Forward Voltage g Temp. Coefficient of VF Reverse Current Junction Capacitance Radiant Intensity y Radiant Power Temp. Coefficient of fe Angle of Half Intensity Peak Wavelength Spectral Bandwidth Temp. Coefficient of lp Rise Time Fall Time Test Conditions IF = 100 mA, tp = 20 ms IF = 1.5 A, tp = 100 ms IF = 100mA VR = 5 V VR = 0 V, f = 1 MHz, E = 0 IF = 100 mA, tp = 20 ms IF = 1.5 A, tp = 100 ms IF = 100 mA, tp = 20 ms IF = 100 mA IF = 100 mA IF = 100 mA IF = 100 mA IF = 100 mA IF = 1.5 A IF = 100 mA IF = 1.5 A Symbol VF VF TKVF IR Cj Ie Ie Min Typ 1.3 2.4 -1.3 30 23 300 18 -0.8 22 925 50 0.2 800 500 800 500 Max 1.8 3.2 100 10 Unit V V mV/K mA fe TKfe lp Dl TKlp tr tr tf tf pF mW/sr mW/sr mW %/K deg nm nm nm/K ns ns ns ns Typical Characteristics (Tamb = 25_C unless otherwise specified) 250 PV - Power Dissipation ( mW ) 200 IF - Forward Current ( mA ) 100 94 7941 e 125 100 150 RthJA 100 75 50 50 0 0 20 40 60 80 25 0 0 20 40 60 80 100 94 8029 e Tamb - Ambient Temperature ( C ) Tamb - Ambient Temperature ( C ) Figure 1. Power Dissipation vs. Ambient Temperature Figure 2. Forward Current vs. Ambient Temperature 2 (5) TELEFUNKEN Semiconductors Rev. A3, 16-Oct-96 TSSP4400 101 I e - Radiant Intensity ( mW/sr ) 102 94 8189 e 1000 I F - Forward Current ( A ) tp / T = 0.01, IFM = 2 A 0.02 100 0.05 0.1 0.2 0.5 10-1 10-2 100 10 1 0.1 10-1 100 101 tp - Pulse Duration ( ms ) 100 101 102 103 IF - Forward Current ( mA ) 104 94 7947 e Figure 3. Pulse Forward Current vs. Pulse Duration 104 IF - Forward Current ( mA ) Figure 6. Radiant Intensity vs. Forward Current 1000 103 Fe - Radiant Power ( mW ) 4 100 102 tp = 100 ms tp / T = 0.001 10 101 1 100 0 94 7952 e 0.1 1 2 3 100 94 7965 e VF - Forward Voltage ( V ) 101 102 103 IF - Forward Current ( mA ) 104 Figure 4. Forward Current vs. Forward Voltage 1.2 V Frel - Relative Forward Voltage 1.1 I e rel ; Fe rel IF = 10 mA 1.0 0.9 Figure 7. Radiant Power vs. Forward Current 1.6 1.2 IF = 20 mA 0.8 0.4 0.8 0.7 0 20 40 60 80 100 94 7993 e 0 -10 0 10 50 100 140 94 7990 e Tamb - Ambient Temperature ( C ) Tamb - Ambient Temperature ( C ) Figure 5. Relative Forward Voltage vs. Ambient Temperature Figure 8. Rel. Radiant Intensity\Power vs. Ambient Temperature TELEFUNKEN Semiconductors Rev. A3, 16-Oct-96 3 (5) TSSP4400 0 1.25 1.0 I e rel - Relative Radiant Intensity 10 20 30 Fe rel - Relative Radiant Power 40 1.0 0.9 0.8 0.7 50 60 70 80 0.75 0.5 0.25 IF = 100 mA 0 875 925 975 12757 l - Wavelength ( nm ) 0.6 94 7966 e 0.4 0.2 0 0.2 0.4 0.6 Figure 9. Relative Radiant Power vs. Wavelength Figure 10. Relative Radiant Intensity vs. Angular Displacement Dimensions in mm 95 11325 4 (5) TELEFUNKEN Semiconductors Rev. A3, 16-Oct-96 TSSP4400 Ozone Depleting Substances Policy Statement It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs). The Montreal Protocol ( 1987) and its London Amendments ( 1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. TEMIC TELEFUNKEN microelectronic GmbH semiconductor division has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. TEMIC can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 TELEFUNKEN Semiconductors Rev. A3, 16-Oct-96 5 (5) |
Price & Availability of TSSP4400
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |