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| VDRM ITGQM ITSM VT0 rT VDclink = = = = = = 4500 4000 25x103 1.2 0.65 2800 V A A V m V Asymmetric Gate turn-off Thyristor 5SGF 40L4502 Doc. No. 5SYA1209-04 Jan. 03 * Patented free-floating silicon technology * Low on-state and switching losses * Annular gate electrode * Industry standard housing * Cosmic radiation withstand rating Blocking Maximum rated values 1) Parameter Repetitive peak off-state voltage Repetitive peak reverse voltage Permanent DC voltage for 100 FIT failure rate Characteristic values Symbol Conditions VDRM VRRM VDclink Ambient cosmic radiation at sea level in open air. VGR 2 V min typ max 4500 17 2800 Unit V V V Parameter Repetitive peak off-state current Repetitive peak reverse current Symbol Conditions IDRM IRRM VD = VDRM, VGR 2 V VR = VRRM, RGK = min typ max 100 50 Unit mA mA Mechanical data Maximum rated values 1) Parameter Mounting force Characteristic values Symbol Conditions Fm Symbol Conditions Dp H m Ds Anode to Gate 0.1 mm 0.5 mm min 36 min typ 40 typ 75 26 1.5 max 44 max Unit kN Unit mm mm kg mm mm Parameter Pole-piece diameter Housing thickness Weight Surface creepage distance 33 Air strike distance Da Anode to Gate 14 1) Maximum rated values indicate limits beyond which damage to the device may occur ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. 5SGF 40L4502 GTO Data On-state Maximum rated values 1) Parameter Max. average on-state current Max. peak non-repetitive surge current Limiting load integral Max. peak non-repetitive surge current Limiting load integral Characteristic values Symbol Conditions ITAVM Half sine wave, TC = 85 C min typ max 1180 1850 Unit A A 3 Max. RMS on-state current ITRMS ITSM I2t ITSM I2t Symbol Conditions VT V(T0) rT IH 1) tp = 10 ms, Tvj = 125C, sine wave After Surge: VD = VR = 0 V tp = 1 ms, Tvj = 125C, sine wave After Surge: VD = VR = 0 V 25x10 A A2s A A2s Unit V V m A 3.1x10 40x10 6 3 800x10 min typ max 3.8 1.2 0.65 100 3 Parameter On-state voltage Threshold voltage Slope resistance Holding current IT = 4000 A, Tvj = 125C Tvj = 125C IT = 400...5000 A Tvj = 25C Turn-on switching Maximum rated values Parameter Critical rate of rise of onstate current Critical rate of rise of onstate current Min. on-time Characteristic values Symbol Conditions diT/dtcr diT/dtcr ton Symbol Conditions td tr Eon VD = 0.5 VDRM, Tvj = 125 C IT = 4000 A, di/dt = 300 A/s, IGM = 50 A, diG/dt = 40 A/s, CS = 6 F, RS = 5 Tvj = 125C, IT = 4000 A, IGM = 50 A, diG/dt = 40 A/s f = 200 Hz f = 1 Hz min typ max 500 1000 Unit A/s A/s s 100 min typ max 2.5 5 3 Parameter Turn-on delay time Rise time Turn-on energy per pulse Unit s s J Turn-off switching Maximum rated values 1) Parameter Max. controllable turn-off current Min. off-time Characteristic values Symbol Conditions ITGQM toff Symbol Conditions tS tf Eoff IGQM VD = 0.5 VDRM, Tvj = 125 C VDM VDRM, diGQ/dt = 40 A/s, ITGQ = ITGQM, RS = 5, CS = 6 F, LS = 0.2 H VDM VDRM, diGQ/dt = 40 A/s, CS = 6 F, LS 0.2 H min typ max 4000 Unit A s 100 min typ max 25 3 10 1100 Parameter Storage time Fall time Turn-on energy per pulse Peak turn-off gate current Unit s s J A ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1209-04 Jan. 03 page 2 of 9 5SGF 40L4502 Gate Maximum rated values 1) Parameter Repetetive peak reverse voltage Repetetive peak reverse current Characteristic values Symbol Conditions VGRM IGRM VGR = VGRM min typ max 17 20 Unit V mA Parameter Gate trigger voltage Gate trigger current Symbol Conditions VGT IGT 1) min typ 1.2 4 max Unit V A Tvj = 25C, VD = 24 V, RA = 0.1 Thermal Maximum rated values Parameter Junction operating temperature Storage temperature range Characteristic values Symbol Tvj Tstg Symbol Rth(jc) Rth(jc)A Rth(jc)C Conditions min -40 -40 typ max 125 125 Unit C C Unit K/kW K/kW K/kW K/kW K/kW Parameter Thermal resistance junction to case Conditions Double side cooled Anode side cooled Cathode side cooled Single side cooled Double side cooled min typ max 11 20 25 6 3 Thermal resistance case to heatsink (Double side cooled) Rth(ch) Rth(ch) Analytical function for transient thermal impedance: ZthJC(t) = a Ri(1 - e -t/ i ) i =1 i Ri(K/kW) i(s) 1 7.766 0.5764 2 1.728 0.1258 3 1.064 0.0128 4 0.450 0.0031 Fig. 1 Transient thermal impedance, junction to case. n ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1209-04 Jan. 03 page 3 of 9 5SGF 40L4502 Fig. 2 On-state characteristics. Fig. 3 Average on-state power dissipation vs. average on-state current. Fig. 4 Surge current and fusing integral vs. pulse width. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1209-04 Jan. 03 page 4 of 9 5SGF 40L4502 Fig. 5 Forward blocking voltage vs. gate-cathode resistance. Fig. 6 Static dv/dt capability: Forward blocking voltage vs. neg. gate voltage or gate cathode resistance. Fig. 7 Forward gate current vs. forard gate voltage. Fig. 8 Gate trigger current vs. junction temperature ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1209-04 Jan. 03 page 5 of 9 5SGF 40L4502 Fig. 9 Turn-on energy per pulse vs. on-state current and turn-on voltage. Fig. 10 Turn-on energy per pulse vs. on.-state current and current rise rate Common Test conditions for figures 9, 10 and 11: diG/dt CS RS Tj = 40 A/s = 6 F =5 = 125 C Definition of Turn-on energy: 20 s E on = oV 0 D ITdt (t = 0, IG = 0.1 IGM ) Common Test conditions for figures 12, 13 and 15: Definition of Turn-off energy: 40 s E off = oV 0 D ITdt ( t = 0, IT = 0.9 ITGQ ) Fig. 11 Turn-on energy per pulse vs. on-state current and turn-on voltage. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1209-04 Jan. 03 page 6 of 9 5SGF 40L4502 Fig. 12 Turn-off energy per pulse vs. turn-off current and peak turn-off voltage. Extracted gate charge vs. turn-off current. Fig. 13 Turn-off energy per pulse vs. turn-off current and snubber capacitance. Fig. 14 Required snubber capacitor vs. max allowable turn-off current. IGQM [A] 1200 IGQM Fig. 15 Turn-off energy per pulse, storage time and peak turn-off gate current vs. junction temperature. ts [s] 60 Preliminary Data 1100 IGQM [A] ts [s] 50 45 40 35 30 25 20 15 10 5 0 0 10 20 30 40 50 Conditions: ITGQ = 4000 A T j = 125 C 1200 1000 800 IGQM 600 400 tS Conditions: diGQ /dt =40 A/s T j = 125 C 50 40 Preliminary Data tS 1000 30 900 20 800 10 0 0 500 1000 200 0 4000 ITGQ [A] 700 60 diGQ /dt [A/s] 1500 2000 2500 3000 3500 Fig. 16 Storage time and peak turn-off gate current vs. neg. gate current rise rate. Fig. 17 Storage time and peak turn-off gate current vs. turn-off current. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1209-04 Jan. 03 page 7 of 9 5SGF 40L4502 Fig. 18 General current and voltage waveforms with GTO-specific symbols. Fig. 19 Outline drawing. All dimensions are in millimeters and represent nominal values unless stated otherwise. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1209-04 Jan. 03 page 8 of 9 5SGF 40L4502 The 5SGF 40L4502 is a 91 mm buffered layer GTO with exceptionally low dynamic and static losses designed to retro-fit all former 4 kA GTOs of the same voltage. It offers optimal trade-off between on-state and switching losses and is encapsulated in an industry-standard press pack housing 120 mm wide and 26 mm thick. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)58 586 1419 +41 (0)58 586 1306 abbsem@ch.abb.com www.abb.com/semiconductors Doc. No. 5SYA1209-04 Jan. 03 |
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