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| LESHAN RADIO COMPANY, LTD. N-CHANNEL POWER MOSFET LBSS123LT1 FEATURE Pb-Free Package is available. LBSS123LT1 3 1 2 DEVICE MARKING AND ORDERING INFORMATION Device LBSS123LT1 LBSS123LT1G LBSS123LT3 LBSS123LT3G Marking SA SA (Pb-Free) SA SA (Pb-Free) Shipping 3000/Tape&Reel 3000/Tape&Reel 10000/Tape&Reel 10000/Tape&Reel SOT-23 Drain 3 MAXIMUM RATINGS Rating Drain-Source Voltage Gate-Source Voltage - Continuous - Non-repetitive (tp 50 s) Drain Current Continuous (Note 1.) Pulsed (Note 2.) Symbol VDSS VGS VGSM ID IDM Value 100 20 40 0.17 0.68 Unit Vdc Vdc Vpk Adc 1 Gate 2 Source THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board (Note 3.) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA TJ, Tstg 556 -55 to +150 Unit mW mW/C C/W C 1. The Power Dissipation of the package may result in a lower continuous drain current. 2. Pulse Width v 300 ms, Duty Cycle v 2.0%. 3. FR-5 = 1.0 0.75 0.062 in. LBSS123LT1-1/4 LESHAN RADIO COMPANY, LTD. LBSS123LT1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage (VGS = 0, ID = 250 Adc) Zero Gate Voltage Drain Current (VGS = 0, VDS = 100 Vdc) TJ = 25C TJ = 125C Gate-Body Leakage Current (VGS = 20 Vdc, VDS = 0) V(BR)DSS IDSS - - IGSS - - - - 15 60 50 nAdc 100 - - Vdc Adc ON CHARACTERISTICS (Note 4.) Gate Threshold Voltage (VDS = VGS, ID = 1.0 mAdc) Static Drain-Source On-Resistance (VGS = 10 Vdc, ID = 100 mAdc) Forward Transconductance (VDS = 25 Vdc, ID = 100 mAdc) VGS(th) rDS(on) gfs 0.8 - 80 - 5.0 - 2.8 6.0 - Vdc mmhos DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Output Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Reverse Transfer Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Ciss Coss Crss - - - 20 9.0 4.0 - - - pF pF pF SWITCHING CHARACTERISTICS(4) Turn-On Delay Time Turn-Off Delay Time (VCC = 30 Vdc, IC = 0.28 Adc, VGS = 10 Vdc, RGS = 50 ) td(on) td(off) - - 20 40 - - ns ns REVERSE DIODE Diode Forward On-Voltage (ID = 0.34 Adc, VGS = 0 Vdc) 4. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. VSD - - 1.3 V LBSS123LT1-2/4 LESHAN RADIO COMPANY, LTD. LBSS123LT1 TYPICAL ELECTRICAL CHARACTERISTICS 2.0 1.8 I D, DRAIN CURRENT (AMPS) 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 VDS, DRAN SOURCE VOLTAGE (VOLTS) TA = 25C I D, DRAIN CURRENT (AMPS) VGS = 10 V 9V 8V 7V 6V 5V 4V 3V 9.0 10 1.0 VDS = 10 V 0.8 0.6 0.4 0.2 -55C 125C 25C 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 VGS, GATE SOURCE VOLTAGE (VOLTS) 9.0 10 Figure 1. Ohmic Region Figure 2. Transfer Characteristics r DS(on) , STATIC DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -60 -20 +20 +60 T, TEMPERATURE (C) +100 +140 VGS = 10 V ID = 200 mA VGS(th) , THRESHOLD VOLTAGE (NORMALIZED) 2.4 1.2 1.05 1.1 1.10 1.0 0.95 0.9 0.85 0.8 0.75 0.7 -60 -20 +20 +60 T, TEMPERATURE (C) +100 +140 VDS = VGS ID = 1.0 mA Figure 3. Temperature versus Static Drain-Source On-Resistance Figure 4. Temperature versus Gate Threshold Voltage LBSS123LT1-3/4 LESHAN RADIO COMPANY, LTD. LBSS123LT1 SOT-23 NOTES: A L 3 1 2 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. BS DIM A B C D G H J K L S V V G C D H K J INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0140 0.0285 0.0350 0.0401 0.0830 0.1039 0.0177 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60 PIN 1. Gate 2. Source 3. Drain 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 inches mm LBSS123LT1-4/4 |
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