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 SDD100
Diode-Diode Modules
Dimensions in mm (1mm=0.0394") Type SDD100N08 SDD100N12 SDD100N14 SDD100N16 SDD100N18 VRSM V 900 1300 1500 1700 1900 VRRM V 800 1200 1400 1600 1800
Symbol IFRMS IFAVM TVJ=TVJM TC=100oC; 180o sine TVJ=45oC VR=0 TVJ=TVJM VR=0 TVJ=45oC VR=0 TVJ=TVJM VR=0
Test Conditions
Maximum Ratings 180 100
Unit A
IFSM
t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine
1700 1950 1540 1800 14450 15700 11850 13400 -40...+150 150 -40...+125
A
i2dt
A2s
TVJ TVJM Tstg VISOL Md Weight 50/60Hz, RMS _ IISOL<1mA t=1min t=1s
o
C
3000 3600 2.5-4/22-35 2.5-4/22-35 90
V~ Nm/lb.in. g
Mounting torque (M5) Terminal connection torque (M5) Typical including screws
SDD100
Diode-Diode Modules
Symbol IR VF VTO rT QS IRM RthJC RthJK dS dA a per diode; DC current per module per diode; DC current per module TVJ=TVJM; VR=VRRM IF=300A; TVJ=25 C
o
Test Conditions
Characteristic Values 15 1.6 0.8 2.3 170 45 0.35 0.175 0.55 0.275 12.7 9.6 50
Unit mA V V m uC A K/W K/W mm mm m/s2
For power-loss calculations only TVJ=TVJM TVJ=125 C; IF=50A; -di/dt=3A/us
o
Creepage distance on surface Strike distance through air Maximum allowable acceleration
FEATURES
* International standard package * Copper base plate * Planar passivated chips * Isolation voltage 3600 V~
APPLICATIONS
* Supplies for DC power equipment * DC supply for PWM inverter * Field supply for DC motors * Battery DC power supplies
ADVANTAGES
* Space and weight savings * Simple mounting * Improved temperature and power cycling * Reduced protection circuits
SDD100
Diode-Diode Modules
Fig. 1 Surge overload current IFSM: Crest value, t: duration
Fig. 2 i2dt versus time (1-10 ms)
Fig. 2a Maximum forward current at case temperature Fig. 3 Power dissipation versus forward current and ambient temperature (per diode)
Fig. 4 Single phase rectifier bridge: Power dissipation versus direct output current and ambient temperature R = resistive load L = inductive load
2 x SDD100
SDD100
Diode-Diode Modules
Fig. 5 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature
3 x SDD100
Fig. 6 Transient thermal impedance junction to case (per diode) RthJC for various conduction angles d: d DC 180oC 120oC 60oC 30oC RthJC (K/W) 0.35 0.37 0.39 0.43 0.47
Constants for ZthJC calculation: i 1 2 3 Rthi (K/W) 0.013 0.072 0.265 ti (s) 0.0014 0.062 0.375
Fig. 7 Transient thermal impedance junction to heatsink (per diode) RthJK for various conduction angles d: d DC 180oC 120oC 60oC 30oC RthJK (K/W) 0.55 0.57 0.59 0.63 0.67
Constants for ZthJK calculation: i 1 2 3 4 Rthi (K/W) 0.013 0.072 0.265 0.2 ti (s) 0.0014 0.062 0.375 1.32


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