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| PRELIMINARY 2SK3674-01L,S,SJ (900V/2.0/7A) 1) Package T-PACK L *E*E*ESee Page 2/4 S *E*E*ESee Page 3/4 SJ *E*E*ESee Page 4/4 2) Absolute Maximum Ratings (Tc=25* Z * @ Items Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Repetitive and Non-Repetitive Maximum Avalanche Current Non-Repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode recovery dV/dt Maximum Power Dissipation This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Co.,Ltd. unless otherwise specified) Ratings 900 7 28 30 7 269.5 20 5 225 1.67 150 -55 * +150 Units V A A V A *1 kV/us kV/us *2 W W mJ Symbols VDS ID ID(pulse) VGS IAR EAS dVDS/dt dV/dt PD*@*--s c=25*Z PD @Ta=25*Z Tch Tstg Operating and Storage Temperature range 3)Electrical Characteristics (Tch=25*Z unless otherwise specified) min. 900 3.0 --------------------7 --typ. ------------980 120 6 28 9 8 --1.0 max. --5.0 50 500 100 2.0 --------------1.5 Units V V A A nA pF Items Symbols Test Conditions ID=250uA VGS=0V Drain-Source Breakdown Voltage BVDSS ID=250uA VDS=VGS VGS(th) Gate Threshold Voltage VDS=900V Tch=25 Zero Gate Voltage Drain Current IDSS VGS=0V Tch=125 VGS=30V VDS=0V IGSS Gate-Source Leakage Current Drain-Source On-State Resistance RDS(on) Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate to Source Charge Gate to Drain (Miller) Charge Avalanche Capability Diode Forward On-Voltage Ciss Coss Crss Qg Qgs Qgd IAV VSD ID=3.5A VGS=10V VDS=25V VGS=0V f=1MHz Vcc=450V ID=7A VGS=10V L=10.1mH Tch=25 IF=7A,VGS=0V,Tch=25*Z nC A V 4) Thermal Characteristics Items Channel to Case Channel to Ambient Symbols Rth(ch-c) Rth(ch-a) Test Conditions min. typ. max. 0.56 75.0 Units /W /W *1 L=10.1mH,Vcc=90V *2 I F-D,-di/dt=50A/ s,Vcc DSS,Tch150 DATE DRAWN REVISIONS MA4LE CHECKED NAME APPROVED DWG.NO. Fuji Electric Co.,Ltd. REVISIONS This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Co.,Ltd. MA4LE DRAWN DWG.NO. CHECKED DATE NAME APPROVED Fuji Electric Co.,Ltd. FUJI POWER MOS FET OUT VIEW See Note: 1. Trademark 4 Fig. 1. Lot No. Type name This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Co.,Ltd. Fig. 1. CONNECTION 1 42 3 GATE DRAIN SOURCE Solder Plating Pre-Solder Notes Note: 1. Guaranteed mark of avalanche ruggedness. 1. ( ) : Reference dimensions. 2. The metal part is covered with the solder plating, part of cutting is without the solder plating. DIMENSIONS ARE IN MILLIMETERS. DATE DRAWN REVISIONS MA4LE DWG.NO. NAME APPROVED Fuji Electric Co.,Ltd. CHECKED FUJI POWER MOS FET OUT VIEW See Note: 1. Trademark Fig. 1. Lot No. Type name This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Co.,Ltd. Fig. 1. CONNECTION 1 4 2 3 GATE DRAIN SOURCE Solder Plating Pre-Solder Notes 1. ( ) : Reference dimensions. 2. The metal part is covered with the solder plating, part of cutting is without the solder plating. DIMENSIONS ARE IN MILLIMETERS. Fuji Electric Co.,Ltd. DWG.NO. Note: 1. Guaranteed mark of avalanche ruggedness. DATE DRAWN CHECKED REVISIONS MA4LE NAME APPROVED |
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