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 AEGIS
SEMICONDUTORES LTDA.
A5A:2550.XX
VOLTAGE RATINGS
Part Number A5A:2550.14 A5A:2550.16 A5A:2550.18 A5A:2550.20 A5A:2550.22 VRRM , VR (V) Max. rep. peak reverse voltage TJ = 0 to 175 C 1400 1600 1800 2000 2200
O
VRSM , VR (V) Max. non-rep. peak reverse voltage
O
TJ = -40 to 0 C 1400 1520 1710 1900 2090
TJ = 25 to 175 C 1500 1700 1900 2100 2300
O
MAXIMUM ALLOWABLE RATINGS
PARAMETER TJ Junction Temperature Tstg Storage Temperature IF(AV) Max. Av. current @ Max. TC VALUE -40 to 175 -40 to 175 2200 125 4020 26.7 IFSM Max. Peak non-rep. surge current 28.0 kA 31.8 33.3 3270 3580 I t Max. I t capability 4620 5070 It
2 1/2 2 2
UNITS
O O
NOTES 180O half sine wave 50 Hz half cycle sine wave 60 Hz half cycle sine wave 50 Hz half cycle sine wave 60 Hz half cycle sine wave t = 10ms t = 8.3 ms Initial TJ = 175OC, rated VRRM applied after surge.
C C C
A
O
IF(RMS) Nom. RMS current
A
Initial TJ = 175OC, no voltage applied after surge.
Initial TJ = 175OC, rated VRRM applied after surge.
kA s t = 10ms t = 8.3 ms kA2s1/2 N.m
2 1/2
2
Initial TJ = 175 C, no voltage applied after surge.
2
O
Max. I t
2 1/2
capability
50700 2500
Initial TJ = 175OC, no voltage applied after surge. for time tx = I t * tx1/2. (0.1 < tx < 10ms). -
It
F Mounting Force
AEGIS
SEMICONDUTORES LTDA.
A5A:2550.XX
CHARACTERISTICS
PARAMETER VFM Peak forward voltage VF(TO)1 Low-level threshold VF(TO)2 High-level threshold rF1 Low-level resistance rF2 High-level resistance IRM Peak reverse current RthJC Thermal resistance, junction-to-case RthCS Thermal resistance, case-to-sink wt Weight Case Style MIN. ----------------------TYP. 1.55 --------50 --------425(15) A-24 MAX. UNITS 1.75 0.787 0.804 0.133 0.121 100 0.023 0.025 0.025 0.01 --O O O
TEST CONDITIONS Initial T J = 25 C, 50-60Hz half sine, Ipeak = 6911A. O TJ = 175 C Av. power = V F(TO) * IF(AV) +rF * [IF(RMS)]2 Use low values for IFM < pIF(AV) TJ = 175 C. Max. rated VRRM
O O O
V V mW mA
C/W DC operation, double side C/W 180 sine wave, double side
O
O
C/W 120 rectangular wave, duble side Mtg. Surface smooth, flat and greased. Double side C/W cooled. -----
g(oz.)
Maximum Allowable Case Temperature
Maximum Allowable Case Temperature (C)
170 160 150 140 130 120 110 0 500 1000 1500 2000
Maximum Allowable Case Temperature Maximum Allowable Case Temperature (C)
170 160 150 140 130
30
30 60 90 120 180
120 110 100 90 0 500 1000
60 90 120 180
DC
2500
1500
2000
2500
3000
3500
4000
4500
*Sinusoidal waveform
*Rectangular waveform
Average Forward Current (A)
Average Forward Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
AEGIS
SEMICONDUTORES LTDA.
A5A:2550.XX
Maximum Average Forward Power Loss
30000
40000
Maximum Average Forward Power Loss
30
Maximum Average Forward Power Loss (W)
35000 30000 25000 20000 15000 10000 5000 0
*Sinusoidal waveform 60
Maximum Average Forward Power Loss (W)
30
25000
20000
60
15000
90 120 180
90
10000
120 180
5000
DC
0 0 500 1000 1500 2000 2500 3000 3500 4000
*Rectangular waveform
0
500
1000
1500
2000
2500
3000
3500
4000
4500
Average Forward Current (A)
Average Forward Current (A)
Fig. 3 - Average Forward Power Loss Characteristics
Fig. 4 - Average Forward Power Loss Characteristics
10000
Forward Voltage Drop
Transient Thermal Impedance ZthJC (C/W)
0.1
Transient Thermal Impedance ZthJC
Instantaneous Forward Current (A)
1000
0.01
125C 25C
100 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6
1E-3 1E-3
0.01
0.1
1
10
Instantaneous Forward Voltage (V)
Time (s)
Fig. 5 - Forward Voltage Drop Characteristics
Fig. 6 - Transient Thermal Impedance ZthJC Characteristics
AEGIS
SEMICONDUTORES LTDA.
A5A:2550.XX A-24
Fig. 7 - Outline Characteristics


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