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AEGIS SEMICONDUTORES LTDA. A5A:2550.XX VOLTAGE RATINGS Part Number A5A:2550.14 A5A:2550.16 A5A:2550.18 A5A:2550.20 A5A:2550.22 VRRM , VR (V) Max. rep. peak reverse voltage TJ = 0 to 175 C 1400 1600 1800 2000 2200 O VRSM , VR (V) Max. non-rep. peak reverse voltage O TJ = -40 to 0 C 1400 1520 1710 1900 2090 TJ = 25 to 175 C 1500 1700 1900 2100 2300 O MAXIMUM ALLOWABLE RATINGS PARAMETER TJ Junction Temperature Tstg Storage Temperature IF(AV) Max. Av. current @ Max. TC VALUE -40 to 175 -40 to 175 2200 125 4020 26.7 IFSM Max. Peak non-rep. surge current 28.0 kA 31.8 33.3 3270 3580 I t Max. I t capability 4620 5070 It 2 1/2 2 2 UNITS O O NOTES 180O half sine wave 50 Hz half cycle sine wave 60 Hz half cycle sine wave 50 Hz half cycle sine wave 60 Hz half cycle sine wave t = 10ms t = 8.3 ms Initial TJ = 175OC, rated VRRM applied after surge. C C C A O IF(RMS) Nom. RMS current A Initial TJ = 175OC, no voltage applied after surge. Initial TJ = 175OC, rated VRRM applied after surge. kA s t = 10ms t = 8.3 ms kA2s1/2 N.m 2 1/2 2 Initial TJ = 175 C, no voltage applied after surge. 2 O Max. I t 2 1/2 capability 50700 2500 Initial TJ = 175OC, no voltage applied after surge. for time tx = I t * tx1/2. (0.1 < tx < 10ms). - It F Mounting Force AEGIS SEMICONDUTORES LTDA. A5A:2550.XX CHARACTERISTICS PARAMETER VFM Peak forward voltage VF(TO)1 Low-level threshold VF(TO)2 High-level threshold rF1 Low-level resistance rF2 High-level resistance IRM Peak reverse current RthJC Thermal resistance, junction-to-case RthCS Thermal resistance, case-to-sink wt Weight Case Style MIN. ----------------------TYP. 1.55 --------50 --------425(15) A-24 MAX. UNITS 1.75 0.787 0.804 0.133 0.121 100 0.023 0.025 0.025 0.01 --O O O TEST CONDITIONS Initial T J = 25 C, 50-60Hz half sine, Ipeak = 6911A. O TJ = 175 C Av. power = V F(TO) * IF(AV) +rF * [IF(RMS)]2 Use low values for IFM < pIF(AV) TJ = 175 C. Max. rated VRRM O O O V V mW mA C/W DC operation, double side C/W 180 sine wave, double side O O C/W 120 rectangular wave, duble side Mtg. Surface smooth, flat and greased. Double side C/W cooled. ----- g(oz.) Maximum Allowable Case Temperature Maximum Allowable Case Temperature (C) 170 160 150 140 130 120 110 0 500 1000 1500 2000 Maximum Allowable Case Temperature Maximum Allowable Case Temperature (C) 170 160 150 140 130 30 30 60 90 120 180 120 110 100 90 0 500 1000 60 90 120 180 DC 2500 1500 2000 2500 3000 3500 4000 4500 *Sinusoidal waveform *Rectangular waveform Average Forward Current (A) Average Forward Current (A) Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics AEGIS SEMICONDUTORES LTDA. A5A:2550.XX Maximum Average Forward Power Loss 30000 40000 Maximum Average Forward Power Loss 30 Maximum Average Forward Power Loss (W) 35000 30000 25000 20000 15000 10000 5000 0 *Sinusoidal waveform 60 Maximum Average Forward Power Loss (W) 30 25000 20000 60 15000 90 120 180 90 10000 120 180 5000 DC 0 0 500 1000 1500 2000 2500 3000 3500 4000 *Rectangular waveform 0 500 1000 1500 2000 2500 3000 3500 4000 4500 Average Forward Current (A) Average Forward Current (A) Fig. 3 - Average Forward Power Loss Characteristics Fig. 4 - Average Forward Power Loss Characteristics 10000 Forward Voltage Drop Transient Thermal Impedance ZthJC (C/W) 0.1 Transient Thermal Impedance ZthJC Instantaneous Forward Current (A) 1000 0.01 125C 25C 100 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 1E-3 1E-3 0.01 0.1 1 10 Instantaneous Forward Voltage (V) Time (s) Fig. 5 - Forward Voltage Drop Characteristics Fig. 6 - Transient Thermal Impedance ZthJC Characteristics AEGIS SEMICONDUTORES LTDA. A5A:2550.XX A-24 Fig. 7 - Outline Characteristics |
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