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 AOS Semiconductor Product Reliability Report
AO4915/AO4915L,
Plastic Encapsulated Device
rev A
ALPHA & OMEGA Semiconductor, Inc
495 Mercury Drive Sunnyvale, CA 94085 U.S. Tel: (408) 830-9742 www.aosmd.com Sep 12, 2005
This AOS product reliability report summarizes the qualification result for AO4915. Accelerated environmental tests are performed on a specific sample size, and then followed by electrical test at end point. Review of final electrical test result confirms that AO4915 passes AOS quality and reliability requirements. The released product will be categorized by the process family and be monitored on a quarterly basis for continuously improving the product quality.
Table of Contents:
I. II. III. IV. V. Product Description Package information Environmental Stress Test Summary and Result Reliability Evaluation Quality Assurance Information
I. Product Description:
Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TA=25C
A
Symbol VDS VGS ID IDM PD TJ, TSTG
Max Q1
Max Q2
Units V V
TA=70C
B
Pulsed Drain Current Power A Dissipation
A W C
TA=25C TA=70C
Junction and Storage Temperature Range
Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Drain-Source Voltage Continuous Drain Current TA=25C
A
Symbol VDS ID IDM PD TJ, TSTG
Max Schottky
Units V
TA=70C
B
Pulsed Drain Current Power A Dissipation
A W C
TA=25C TA=70C
Junction and Storage Temperature Range
Thermal Characteristics : n-channel , p-channel and schottky Parameter Maximum Junctionto-Ambient Maximum Junctionto-Ambient Maximum Junctionto-Lead Maximum Junctionto-Ambient Maximum Junctionto-Ambient Maximum Junctionto-Lead Maximum Junctionto-Ambient Maximum Junctionto-Ambient Maximum Junctionto-Lead t 10s SteadyState SteadyState t 10s SteadyState SteadyState t 10s SteadyState SteadyState Symbol RJA Device n-ch n-ch RJL RJA n-ch p-ch p-ch RJL RJA p-ch schottky schottky RJL schottky Typ 48 74 35 48 74 35 47.5 71 32 Max 62.5 110 40 62.5 110 40 62.5 110 40 C/W C/W C/W Units
II. Package Information:
AO4915 Standard sub-micron low voltage P channel process Package Type 8 lead SOIC Lead Frame Copper with Solder Plate Die Attach Silver epoxy Bond wire 2 mils Au wire Mold Material Epoxy resin with silica filler Filler % (Spherical/Flake) 90/10 Flammability Rating UL-94 V-0 Backside Metallization Ti / Ni / Ag Moisture Level Up to Level 1 * Process AO4915 (Green Compound) Standard sub-micron low voltage P channel process 8 lead SOIC Copper with Solder Plate Silver epoxy 2 mils Au wire Epoxy resin with silica filler 100/0 UL-94 V-0 Ti / Ni / Ag Up to Level 1*
Note * based on info provided by assembler and mold compound supplier
III. Result of Reliability Stress for AO4915 (Standard) & AO4915L (Green)
Test Item Test Condition Time Point Lot Attribution Total Sample size 14410 pcs Number of Failures 0
Solder Reflow Precondition
Normal: 1hr PCT+3 cycle IR reflow@240 (260 for Green) Temp = 150 C, Vgs=100% of Vgsmax
0hr
Normal: 81 lots Green: 23 lots (Note B**)
HTGB
168 / 500 hrs 1000 hrs 168 / 500 hrs
246 pcs (Note A*) 77+5 pcs / lot 246 pcs (Note A*) 77+5 pcs / lot 3740 pcs 50+5 pcs / lot
0
HTRB
Temp = 150 C, Vds=80% of Vdsmax
0
HAST
130 +/- 2 C, 85%, 33.3 psi, Vgs = 80% of Vgs max 121 C, 15+/-1 PSIG, RH=100%
1000 hrs 100 hrs
Normal: 52 lots Green: 16 lots (Note B**) Normal: 70 lots Green: 20 lots (Note B**) Normal: 81 lots Green: 23 lots (Note B**)
0
Pressure Pot
96 hrs
4950 pcs 50+5 pcs / lot
0
Temperature Cycle
-65 to 150 deg C, air to air, 0.5hr per cycle
250 / 500 cycles
5720 pcs 50+5 pcs / lot
0
DPA
Internal Vision Cross-section X-ray
NA
5 5 5 5 40 40 40 15
5 5 5 5 40 wires 40 wires 40 wires 15 leads
0
CSAM Bond Integrity Room Temp 150C bake 150C bake 230C
NA 0hr 250hr 500hr 5 sec
0 0
Solderability
0
Note A: The HTGB and HTRB reliability data presents total of available AO4915 and AO4915L burn-in data up to the published date. Note B: The pressure pot, temperature cycle and HAST reliability data for AO4915L comes from the AOS generic green compound package qualification data.
IV. Reliability Evaluation FIT rate (per billion): MTTF = years
500 hrs of HTGB, 150 deg C accelerated stress testing is equivalent to 15 years of lifetime at 55 deg C operating conditions (by applying the Arrhenius equation with an activation energy of 0.7eV and 60% of upper confidence level on the failure rate calculation). AOS reliability group also routinely monitors the product reliability up to 1000 hr at and performs the necessary failure analysis on the units failed for reliability test(s). The presentation of FIT rate for the individual product reliability is restricted by the actual burn-in sample size of the selected product (AO4915). Failure Rate Determination is based on JEDEC Standard JESD 85. FIT means one failure per billion hours. Failure Rate = Chi x 10 / [2 (N) (H) (Af)] = 1.83 x 10 9 7 MTBF = 10 / FIT = x 10 hrs = years
2 9 9
/ [2 (164) (168) (258)] =
Chi = Chi Squared Distribution, determined by the number of failures and confidence interval N = Total Number of units from HTRB and HTGB tests H = Duration of HTRB/HTGB testing Af = Acceleration Factor from Test to Use Conditions (Ea = 0.7eV and Tuse = 55C) Acceleration Factor [Af] = Exp [Ea / k ( 1/Tj u - 1/Tj s )] Acceleration Factor ratio list:
55 deg C 70 deg C 85 deg C 100 deg C 115 deg C 130 deg C 150 deg C
Af 258 87 32 13 5.64 Tj s = Stressed junction temperature in degree (Kelvin), K = C+273.16 Tj u = The use junction temperature in degree (Kelvin), K = C+273.16 k = Boltznan's constant, 8.617164 X 10E-5V / K
2.59
1
V. Quality Assurance Information
Acceptable Quality Level for outgoing inspection: 0.1% for electrical and visual. Guaranteed Outgoing Defect Rate: < 25 ppm Quality Sample Plan: conform to Mil-Std-105D


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