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 CHA3023
RoHS COMPLIANT
1-18 GHz WIDE BAND AMPLIFIER
GaAs Monolithic Microwave IC
Description
The CHA3023 is a travelling wave amplifier using cascode FET. It is designed for a wide range of applications. The circuit is manufactured with a PHEMT process of 0.25m gate length, via holes through the substrate and air bridges and it is available in die form.
15 10 Gain & RLoss 5 0 -5 -10 -15 -20 1 3 5 7 9 11 13 15 17 19 Frequency (GHz) dBS11 dBS22 dBS21
Main Features
Broadband performances : 1-18 GHz
14dB gain 3dB typical Low Noise Figure 0.7 dB gain flatness Die size : 2.15 X 1.42 X 0.10 mm
On wafer measurements
Main Characteristics
Tamb. = 25 C Symbol Fop G NF Id Parameter Operating frequency range Small signal Gain Noise figure Bias current 95 Min 1 12.5 14 4 dB mA Typ Max 18 Unit GHz
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
DSCHA30235263 - 20 sep 05
1/8
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Departementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHA3023
1-18GHz Wide Band Amplifier
Electrical Characteristics for Broadband Operation
Tamb = +25 Vd=5V, C, Vg1=-0.3V tuned to have Id=95mA Vg2=+2V
Symbol Fop G
Parameter Operating frequency range Small signal gain F= 1 to 3GHz F= 3 to 18GHz Small signal gain flatness Output power at 1dB gain compression Input VSWR
Min 1 11.5 12.5
Typ
Max 18
Unit GHz dB dB dB dBm
13 14 0.7
G P1dB VSWRin
15
17 2.2:1 2.2:1 4 2.5 6 4
VSWRout Output VSWR NF Noise Figure F= 1 to 4GHz F= 1 to 18GHz DC voltage Vd Vg1 Vg2
dB dB V V V mA
Vdc
+5 -0.3 +2 95
Id
Bias current
Absolute Maximum Ratings
Tamb. = 25 (1) C Symbol Vd Id Vg1 Vg2 Pin Pin Top Tstg Parameter Drain to ground bias voltage Drain current Gate to ground bias voltage Gate to ground bias voltage Maximun peak input power overdrive (2) Maximum input CW power Operating temperature Storage temperature range -40 -55 -1.5 0 Min. 0 Max. 6.5 110 0.3 3 +15 +10 85 125 Unit V mA V V dBm dBm C C
(1) Operation of this device above anyone of these parameters may cause permanent damage (2) Duration < 1s
DSCHA30235263 - 20 sep 05 2/8 Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHA3023
Typical Results
Chip Typical Response ( On wafer Sij ) :
1-18 GHz Wide Band Amplifier
Tamb = +25 C Vd = 5.0V ; Vg2 = 2V and Vg1 tuned to Id = 95mA Freq GHz
1,00 1,50 2,00 2,50 3,00 3,50 4,00 4,50 5,00 5,50 6,00 6,50 7,00 7,50 8,00 8,50 9,00 9,50 10,00 10,50 11,00 11,50 12,00 12,50 13,00 13,50 14,00 14,50 15,00 15,50 16,00 16,50 17,00 17,50 18,00 18,50 19,00 19,50 20,00
MS11 dB
-11,84 -14,88 -16,59 -17,55 -17,90 -18,04 -17,90 -17,64 -17,43 -17,36 -17,32 -17,35 -17,55 -17,83 -18,45 -19,80 -20,69 -21,89 -23,72 -25,53 -26,70 -25,89 -24,09 -21,74 -19,70 -18,11 -17,00 -15,86 -14,97 -14,53 -13,93 -13,43 -13,18 -12,67 -11,85 -11,23 -10,46 -9,39 -8,65
PS11
-86,69 -96,63 -102,61 -106,89 -110,67 -114,80 -119,10 -124,04 -129,21 -134,92 -140,65 -146,35 -152,20 -157,72 -162,53 -164,62 -168,37 -169,76 -166,34 -158,58 -141,85 -122,93 -110,31 -106,76 -104,76 -106,18 -112,34 -116,67 -120,58 -124,94 -128,81 -132,05 -134,80 -137,46 -137,37 -139,77 -143,04 -147,86 -153,32
MS12 dB
-68,86 -59,00 -57,76 -55,88 -56,09 -54,51 -53,45 -52,07 -52,57 -50,96 -49,52 -48,93 -48,40 -47,52 -46,94 -46,12 -45,55 -44,84 -44,04 -43,80 -43,12 -42,27 -41,97 -41,35 -41,15 -40,87 -40,38 -40,14 -39,83 -39,66 -39,29 -38,83 -38,87 -38,86 -37,71 -37,48 -37,24 -36,76 -36,48
PS12
12,95 -65,50 -85,24 -101,83 -133,36 -146,60 -166,51 178,88 165,06 155,03 145,22 131,37 115,97 106,26 95,20 84,24 74,79 62,64 53,09 39,38 26,47 14,98 2,10 -12,13 -24,23 -38,14 -49,23 -64,35 -75,76 -88,72 -102,25 -118,12 -127,14 -144,06 -156,10 -170,79 175,70 157,84 142,87
MS21 dB
12,27 13,11 13,74 14,21 14,38 14,42 14,50 14,55 14,56 14,57 14,57 14,59 14,58 14,57 14,56 14,54 14,55 14,55 14,53 14,50 14,48 14,44 14,40 14,35 14,29 14,23 14,17 14,11 14,05 14,01 13,97 13,93 13,92 13,92 13,91 13,84 13,57 12,86 12,02
PS21
175,21 164,60 152,90 140,45 127,54 116,64 105,01 93,81 82,83 71,87 61,00 50,26 39,44 28,65 17,95 7,35 -3,41 -14,27 -25,14 -36,02 -46,99 -57,87 -68,96 -79,91 -90,92 -101,96 -112,98 -124,02 -135,10 -146,32 -157,55 -168,97 179,41 167,15 154,49 140,84 125,81 111,51 99,83
MS22 dB
-11,75 -13,13 -14,05 -14,93 -16,15 -15,59 -15,88 -15,86 -15,73 -15,62 -15,45 -15,32 -15,18 -15,15 -14,94 -14,56 -14,48 -14,67 -14,80 -14,99 -15,32 -15,48 -15,87 -15,80 -15,65 -15,16 -14,47 -13,71 -12,85 -12,09 -11,44 -11,06 -11,02 -11,28 -12,47 -16,01 -32,15 -16,15 -11,25
PS22
175,50 134,72 103,57 77,53 60,98 48,79 36,69 24,61 15,78 6,63 -1,24 -9,98 -16,89 -23,44 -30,10 -35,12 -41,40 -46,03 -51,30 -53,99 -57,64 -58,42 -59,30 -58,07 -56,60 -55,31 -55,03 -56,11 -58,60 -63,04 -69,64 -77,10 -85,48 -95,81 -109,17 -125,94 -109,28 -15,25 -34,96
DSCHA30235263 - 20 sep 05
3/8
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHA3023
1-18GHz Wide Band Amplifier
Chip Typical Response (On wafer measurements) :
Tamb = +25 C Vd = 5.0V ; Vg2 = 2V and Vg1 tuned to Id = 95mA
Typical on wafer S parameters
Typical on wafer Noise Figure
Pout vs Frequency (Pin=4dBm)
DSCHA30235263 - 20 sep 05
4/8
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHA3023
1-18 GHz Wide Band Amplifier
Chip Typical Response (Test Jig measurements) :
Tamb = +25 C Vd = 5.0V ; Vg2 = 2V and Vg1 tuned to Id = 95mA
Power compression @ 1GHz
Power compression @ 12GHz
Power compression @ 18GHz
DSCHA30235263 - 20 sep 05 5/8 Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHA3023
1-18GHz Wide Band Amplifier
P1dB vs Frequency
Noise Figure vs Frequency
Gain & Return Loss vs Frequency
DSCHA30235263 - 20 sep 05 6/8 Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHA3023
1-18 GHz Wide Band Amplifier
Chip Assembly and Mechanical Data
Special care should be taken concerning the biasing procedure. Apply Vg before Vd.
Equivalent wire bonding : 0.15 nH
Equivalent wire bonding : 0.15 nH
The CHA3023 could be used without Vg2 bias. There is a resistor bridge inside the chip. This one generates the correct value of Vg2 Bias. Pads G2a and G2 must be connected. Equivalent RF Wire Bondings: 0.15 nH (typical length of 200m for a 25m diameter wire).
Equivalent wire bonding : 0.15 nH
Equivalent wire bonding : 0.15 nH
DSCHA30235263 - 20 sep 05
7/8
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHA3023
1-18GHz Wide Band Amplifier
Bonding pad positions
Chip Thickness: 100um Chipsize: 2150X142035 m
Ordering Information
Die form : CHA3023-99F/00
Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S.
DSCHA30235263 - 20 sep 05 8/8 Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09


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