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CHA5296 RoHS COMPLIANT 27-30GHz High Power Amplifier GaAs Monolithic Microwave IC Description The CHA5296 is a high gain three-stage monolithic high power amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC grounds. This helps to simplify the assembly process. The circuit is manufactured with a P-HEMT process on 50m substrate thickness, 0.25m gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form. 20 Gain & RLosses (dB) 15 10 5 0 -5 -10 -15 -20 20 22 24 26 28 30 Frequency (GHz) 32 34 36 S22 S11 Main Features Performances: 27-30GHz 29dBm output power @ 1dB comp. gain 18 dB 1dB gain DC power consumption, 850mA @ 6V Chip size: 3.80 x 2.52 x 0.05 mm Typical on jig Measurements Main Characteristics Tamb. = 25 C Symbol Fop G P1dB Id Parameter Operating frequency range Small signal gain Output power at 1dB gain compression Bias current Min 27 16 28 Typ 18 29 850 Max 30 Unit GHz dB dBm 1000 mA ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions ! Ref. : DSCHA52967144 - 24 May 07 1/6 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Departementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHA5296 Electrical Characteristics Tamb = +25 C Symbol Fop G G Is P1dB P03 IP3 PAE VSWRin 27-30GHz High Power Amplifier Parameter Operating frequency range (1) Small signal gain (1) Small signal gain flatness (1) Reverse isolation Pulsed output power at 1dB compression (1) Output power at 3dB gain compression (1) 3rd order intercept point (2) Power added efficiency at Psat Input VSWR (2) Min 27 16 Typ Max 30 Unit GHz dB dB dB dBm dBm dBm % 18 1 50 28 29 29 30 38 12 16 5:1 2.5:1 6 850 1000 VSWRout Output VSWR (2) Vd Id Drain bias voltage Bias current @ small signal V mA (1) These values are representative for pulsed on-wafer measurements that are made without bonding wires at the RF ports. (2) Value representative for CW on jig measurement. Absolute Maximum Ratings Tamb. = 25 (1) C Symbol Vd Id Vg Vgd Pin Tch Ta Tstg Drain bias current Gate bias voltage Negative gate drain voltage ( = Vg - Vd) Maximum peak input power overdrive (2) Maximum channnel temperature Operating temperature range Storage temperature range Parameter Drain bias voltage Values 6.5 1450 -2.5 to +0.4 -8 +18 175 -40 to +80 -55 to +125 Unit V mA V V dBm C C C (1) Operation of this device above anyone of these parameters may cause permanent damage. (2) Duration < 1s. Ref. : DSCHA52967144 - 24 May 07 2/6 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 27-30GHz High Power Amplifier Typical on Jig Measurements Bias conditions: Vd=6V, Vg tuned for Id = 850mA Linear Gain & Return Losses versus frequency 20 15 10 Gain & RLosses (dB) 5 0 S11 -5 -10 S22 -15 -20 14 16 18 20 22 24 26 28 30 32 CHA5296 34 36 Frequency (GHz) Gain, PAE & DC drain current vs Output power @ different frequencies 24 23 22 21 20 19 18 17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 21 22 1200 32GHz 28GHz 26GHz 1100 1000 900 800 700 600 30GHz 500 400 300 32GHz 200 100 0 23 24 25 26 27 28 29 30 31 32 33 Output power (dBm) DC Total Drain Current Id (mA) 28GHz 26GHz Id 30GHz 30GHz Gain (dB) & PAE (%) Gain 30GHz 32GHz 28GHz PAE Ref. : DSCHA52967144 - 24 May 07 3/6 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHA5296 42 38 34 30 26 Output power SCL (dBm) 22 18 14 10 6 2 -2 -6 -10 -14 -18 -22 -26 -30 -6 -5 -4 -3 -2 -1 0 1 2 3 4 5 F1,F2 Order 5 Order 3 Order 7 27-30GHz High Power Amplifier IP3 versus input power @ 28.5GHz 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 Input power SCL (dBm) SCL: Single Carrier Level Ref. : DSCHA52967144 - 24 May 07 4/6 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 27-30GHz High Power Amplifier Chip Assembly and Mechanical Data CHA5296 Note : Supply feed should be capacitively bypassed. 25 m diameter gold wire is to be prefered ( Chip thickness : 50m. All dimensions are in micrometers ) Ref. : DSCHA52967144 - 24 May 07 5/6 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHA5296 Application note Bias operation sequence: ON: Supply Gate voltage Supply Drain voltage OFF: Cut off Drain voltage Cut off Gate voltage 27-30GHz High Power Amplifier Due to 50m thickness, specific care is requested for the handling and assembly. Ordering Information Chip form : CHA5296-99F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. Ref. : DSCHA52967144 - 24 May 07 6/6 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 |
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