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 CHA5296
RoHS COMPLIANT
27-30GHz High Power Amplifier
GaAs Monolithic Microwave IC
Description
The CHA5296 is a high gain three-stage monolithic high power amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC grounds. This helps to simplify the assembly process. The circuit is manufactured with a P-HEMT process on 50m substrate thickness, 0.25m gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form.
20 Gain & RLosses (dB) 15 10 5 0 -5 -10 -15 -20 20 22 24 26 28 30 Frequency (GHz) 32 34 36 S22 S11
Main Features
Performances: 27-30GHz 29dBm output power @ 1dB comp. gain 18 dB 1dB gain DC power consumption, 850mA @ 6V Chip size: 3.80 x 2.52 x 0.05 mm
Typical on jig Measurements
Main Characteristics
Tamb. = 25 C Symbol
Fop G P1dB Id
Parameter
Operating frequency range Small signal gain Output power at 1dB gain compression Bias current
Min
27 16 28
Typ
18 29 850
Max
30
Unit
GHz dB dBm
1000
mA
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
Ref. : DSCHA52967144 - 24 May 07
1/6
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Departementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHA5296
Electrical Characteristics
Tamb = +25 C Symbol
Fop G G Is P1dB P03 IP3 PAE VSWRin
27-30GHz High Power Amplifier
Parameter
Operating frequency range (1) Small signal gain (1) Small signal gain flatness (1) Reverse isolation Pulsed output power at 1dB compression (1) Output power at 3dB gain compression (1) 3rd order intercept point (2) Power added efficiency at Psat Input VSWR (2)
Min
27 16
Typ
Max
30
Unit
GHz dB dB dB dBm dBm dBm %
18 1 50
28 29
29 30 38
12
16 5:1 2.5:1 6 850 1000
VSWRout Output VSWR (2) Vd Id Drain bias voltage Bias current @ small signal
V mA
(1) These values are representative for pulsed on-wafer measurements that are made without bonding wires at the RF ports. (2) Value representative for CW on jig measurement.
Absolute Maximum Ratings
Tamb. = 25 (1) C Symbol
Vd Id Vg Vgd Pin Tch Ta Tstg Drain bias current Gate bias voltage Negative gate drain voltage ( = Vg - Vd) Maximum peak input power overdrive (2) Maximum channnel temperature Operating temperature range Storage temperature range
Parameter
Drain bias voltage
Values
6.5 1450 -2.5 to +0.4 -8 +18 175 -40 to +80 -55 to +125
Unit
V mA V V dBm C C C
(1) Operation of this device above anyone of these parameters may cause permanent damage. (2) Duration < 1s.
Ref. : DSCHA52967144 - 24 May 07
2/6
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
27-30GHz High Power Amplifier
Typical on Jig Measurements
Bias conditions: Vd=6V, Vg tuned for Id = 850mA Linear Gain & Return Losses versus frequency
20 15 10 Gain & RLosses (dB) 5 0 S11 -5 -10 S22 -15 -20 14 16 18 20 22 24 26 28 30 32
CHA5296
34
36
Frequency (GHz)
Gain, PAE & DC drain current vs Output power @ different frequencies
24 23 22 21 20 19 18 17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 21 22 1200 32GHz 28GHz 26GHz 1100 1000 900 800 700 600 30GHz 500 400 300 32GHz 200 100 0 23 24 25 26 27 28 29 30 31 32 33 Output power (dBm) DC Total Drain Current Id (mA) 28GHz 26GHz
Id
30GHz 30GHz
Gain (dB) & PAE (%)
Gain
30GHz 32GHz
28GHz
PAE
Ref. : DSCHA52967144 - 24 May 07
3/6
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHA5296
42 38 34 30 26 Output power SCL (dBm) 22 18 14 10 6 2 -2 -6 -10 -14 -18 -22 -26 -30 -6 -5 -4 -3 -2 -1 0 1 2 3 4 5
F1,F2 Order 5 Order 3 Order 7
27-30GHz High Power Amplifier
IP3 versus input power @ 28.5GHz
6
7
8
9 10 11 12 13 14 15 16 17 18 19 20
Input power SCL (dBm)
SCL: Single Carrier Level
Ref. : DSCHA52967144 - 24 May 07
4/6
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
27-30GHz High Power Amplifier
Chip Assembly and Mechanical Data
CHA5296
Note : Supply feed should be capacitively bypassed. 25 m diameter gold wire is to be prefered
( Chip thickness : 50m. All dimensions are in micrometers )
Ref. : DSCHA52967144 - 24 May 07 5/6 Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHA5296
Application note
Bias operation sequence: ON: Supply Gate voltage Supply Drain voltage OFF: Cut off Drain voltage Cut off Gate voltage
27-30GHz High Power Amplifier
Due to 50m thickness, specific care is requested for the handling and assembly.
Ordering Information
Chip form : CHA5296-99F/00
Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S.
Ref. : DSCHA52967144 - 24 May 07
6/6
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09


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