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| PD - 95698 IRF7607PBF HEXFET(R) Power MOSFET Trench Technology l Ultra Low On-Resistance l N-Channel MOSFET l Very Small SOIC Package l Low Profile (<1.1mm) l Available in Tape & Reel l Lead-Free l S S S G 1 2 3 4 8 7 A A D D D D VDSS = 20V RDS(on) = 0.030 6 5 Description New trench HEXFET(R) power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The new Micro8TM package has half the footprint area of the standard SO-8. This makes the Micro8 an ideal package for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro8 will allow it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. Top View Micro8TM Absolute Maximum Ratings Parameter VDS ID @ TA = 25C ID @ TA= 70C IDM PD @TA = 25C PD @TA = 70C VGS TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range Max. 20 6.5 5.2 50 1.8 1.2 0.014 12 -55 to + 150 Units V A W W/C V C Thermal Resistance Parameter RJA Maximum Junction-to-Ambient Max. 70 Units C/W www.irf.com 1 9/2/04 IRF7607PBF Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS V(BR)DSS/TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance RDS(on) VGS(th) gfs IDSS I GSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Min. 20 --- --- --- 0.60 13 --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- 0.016 --- --- --- --- --- --- --- --- 15 2.2 3.5 8.5 11 36 16 1310 150 36 Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, I D = 1mA 0.030 VGS = 4.5V, ID = 6.5A 0.045 VGS = 2.5V, ID = 5.2A 1.2 V VDS = VGS, ID = 250A --- S VDS = 10V, ID = 6.5A 1.0 VDS = 16V, VGS = 0V A 25 VDS = 16V, V GS = 0V, TJ = 70C -100 VGS = -12V nA 100 VGS = 12V 22 ID = 6.5A 3.3 nC VDS = 10V 5.3 VGS = 5.0V --- VDD = 10V --- ID = 1.0A ns --- R G = 6.0 --- R D = 10 --- VGS = 0V --- pF VDS = 15V --- = 1.0MHz Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Min. Typ. Max. Units --- --- --- --- 19 13 1.8 A 50 1.2 29 20 V ns nC Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = 1.7A, VGS = 0V TJ = 25C, IF = 1.7A di/dt = 100A/s D S Notes: Repetitive rating; pulse width limited by Pulse width 400s; duty cycle 2%. max. junction temperature. (See fig. 11) Surface mounted on FR-4 board, t 5sec. 2 www.irf.com IRF7607PBF 100 VGS 7.50V 5.00V 4.00V 3.50V 3.00V 2.50V 2.00V BOTTOM 1.50V TOP 100 I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) VGS 7.50V 5.00V 4.00V 3.50V 3.00V 2.50V 2.00V BOTTOM 1.50V TOP 10 10 1.50V 20s PULSE WIDTH TJ = 150 C 1 10 100 1.50V 1 0.1 20s PULSE WIDTH TJ = 25 C 1 10 100 1 0.1 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 2.0 TJ = 25 C TJ = 150 C 10 RDS(on) , Drain-to-Source On Resistance (Normalized) ID = 5.3A I D , Drain-to-Source Current (A) 1.5 1.0 0.5 1 1.5 V DS = 15V 20s PULSE WIDTH 2.0 2.5 3.0 3.5 0.0 -60 -40 -20 VGS = 4.5V 0 20 40 60 80 100 120 140 160 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRF7607PBF 2000 1600 VGS , Gate-to-Source Voltage (V) VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 10 ID = 6.5A 5.3A VDS = 10V 8 C, Capacitance (pF) Ciss 1200 6 800 4 400 2 0 Coss Crss 1 10 100 0 0 4 8 12 16 20 24 VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 100 ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY RDS(on) 10 TJ = 150 C I D , Drain Current (A) 10 1ms 1 TJ = 25 C 0.1 0.4 V GS = 0 V 0.6 0.8 1.0 1.2 1 0.1 TA = 25 C TJ = 150 C Single Pulse 1 10 10ms 100 VSD ,Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRF7607PBF 6.0 0.20 5.0 0.10 ID , Drain Current (A) VGS(th) , Variace ( V ) 4.0 0.00 Id = 250A -0.10 3.0 2.0 -0.20 1.0 -0.30 0.0 -0.40 25 50 TC , Case Temperature ( C) 75 100 125 150 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( C ) Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10. Typical Vgs(th) Variance Vs. Juction Temperature 100 Thermal Response (Z thJA ) D = 0.50 0.20 10 0.10 0.05 0.02 1 0.01 PDM t1 t2 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 0.0001 0.001 0.01 0.1 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 1 10 100 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 IRF7607PBF RDS ( on) , Drain-to-Source On Resistance ( ) 0.040 0.10 RDS(on) , Drain-to -Source Voltage ( ) 0.035 0.08 0.030 0.06 0.025 Id = 5.3A 0.04 VGS= 2.5V VGS = 4.5V 0.020 2.0 3.0 4.0 5.0 6.0 7.0 8.0 0.02 0 10 20 30 40 VGS, Gate -to -Source Voltage ( V ) ID, - Drain Current (A ) Fig 12. Typical On-Resistance Vs. Gate Voltage Fig 13. Typical On-Resistance Vs. Drain Current 6 www.irf.com IRF7607PBF Micro8 Package Outline Dimensions are shown in milimeters (inches) LEAD ASSIGNMENTS D -B3 DDDD 8765 H 0.25 (.010) 1234 SSSG e 6X e1 A -CB 8X 0.08 (.003) M A1 C AS BS 0.10 (.004) L 8X C 8X 3.20 ( .126 ) 4.24 5.28 ( .167 ) ( .208 ) RECOMMENDED FOOTPRINT 1.04 ( .041 ) 8X 0.38 8X ( .015 ) S1 G1 S2 G2 M A M SINGLE 1234 D1 D1 D2 D2 8765 DUAL 1234 DIM INCHES MIN MAX MILLIMETERS MIN MAX A A1 B C D e e1 E H L .036 .004 .010 .005 .116 .044 .008 .014 .007 .120 0.91 0.10 0.25 0.13 2.95 1.11 0.20 0.36 0.18 3.05 3 8765 E -A- .0256 BASIC .0128 BASIC .116 .188 .016 0 .120 .198 .026 6 0.65 BASIC 0.33 BASIC 2.95 4.78 0.41 0 3.05 5.03 0.66 6 NOTES: 1 DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982. 2 CONTROLLING DIMENSION : INCH. 3 DIMENSIONS DO NOT INCLUDE MOLD FLASH. 0.65 6X ( .0256 ) Micro8 Part Marking Information EXAMPLE: THIS IS AN IRF 7501 LOT CODE (XX) DATE CODE (YW) - S ee table below Y = YEAR W = WEEK P = DES IGNATES LEAD - FREE PRODUCT (OPTIONAL) PART NUMBER WW = (1-26) IF PRECEDED BY LAS T DIGIT OF CALENDAR YEAR YEAR 2001 2002 2003 2004 2005 2006 2007 2008 2009 2010 Y 1 2 3 4 5 6 7 8 9 0 WORK WEEK 01 02 03 04 W A B C D WW = (27-52) IF PRECEDED BY A LETT ER YEAR 2001 2002 2003 2004 2005 2006 2007 2008 2009 2010 Y A B C D E F G H J K WORK WEEK 27 28 29 30 W A B C D 24 25 26 X Y Z 50 51 52 X Y Z www.irf.com 7 IRF7607PBF Micro8 Tape & Reel Information Dimensions are shown in millimeters (inches) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. OUTLINE CONFORMS TO EIA-481 & EIA-541. 2. CONTROLLING DIMENSION : MILLIMETER. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.09/04 8 www.irf.com |
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