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SMPS IGBT PD - 95558 IRGP20B60PDPBF WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE Applications Telecom and Server SMPS PFC and ZVS SMPS Circuits Uninterruptable Power Supplies Consumer Electronics Power Supplies Lead-Free NPT Technology, Positive Temperature Coefficient Lower VCE(SAT) Lower Parasitic Capacitances Minimal Tail Current HEXFRED Ultra Fast Soft-Recovery Co-Pack Diode Tighter Distribution of Parameters Higher Reliability C * * * * * * * * * * * * VCES = 600V VCE(on) typ. = 2.05V @ VGE = 15V IC = 13.0A G E Features n-channel Equivalent MOSFET Parameters RCE(on) typ. = 158m ID (FET equivalent) = 20A Benefits * Parallel Operation for Higher Current Applications * Lower Conduction Losses and Switching Losses * Higher Switching Frequency up to 150kHz E C G TO-247AC Absolute Maximum Ratings Parameter VCES IC @ TC = 25C IC @ TC = 100C ICM ILM IF @ TC = 25C IF @ TC = 100C IFRM VGE PD @ TC = 25C PD @ TC = 100C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current (Ref. Fig. C.T.4) Clamped Inductive Load Current Max. 600 40 22 80 80 31 12 42 20 220 86 -55 to +150 Units V d A Diode Continous Forward Current Diode Continous Forward Current Maximum Repetitive Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw e V W C 300 (0.063 in. (1.6mm) from case) 10 lbf*in (1.1 N*m) Thermal Resistance Parameter RJC (IGBT) RJC (Diode) RCS RJA Thermal Resistance Junction-to-Case-(each IGBT) Thermal Resistance Junction-to-Case-(each Diode) Thermal Resistance, Case-to-Sink (flat, greased surface) Thermal Resistance, Junction-to-Ambient (typical socket mount) Weight Min. --- --- --- --- --- Typ. --- --- 0.24 --- 6 (0.21) Max. 0.58 2.5 --- 40 --- Units C/W g (oz) 7/27/04 IRGP20B60PDPBF V(BR)CES V(BR)CES/TJ Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter Collector-to-Emitter Breakdown Voltage Temperature Coeff. of Breakdown Voltage Min. 600 -- -- -- -- -- -- Typ. -- 0.32 4.3 2.05 2.50 2.65 3.30 4.0 -11 19 1.0 0.1 1.4 1.3 -- Max. Units -- -- -- 2.35 2.80 3.00 3.70 5.0 -- -- 250 -- 1.7 1.6 100 nA V V Conditions VGE = 0V, IC = 500A 1MHz, Open Collector IC = 13A, VGE = 15V IC = 20A, VGE = 15V IC = 13A, VGE = 15V, TJ = 125C IC = 20A, VGE = 15V, TJ = 125C Ref.Fig V/C VGE = 0V, IC = 1mA (25C-125C) 4, 5,6,8,9 RG VCE(on) Internal Gate Resistance Collector-to-Emitter Saturation Voltage VGE(th) VGE(th)/TJ Gate Threshold Voltage Threshold Voltage temp. coefficient Forward Transconductance Collector-to-Emitter Leakage Current Diode Forward Voltage Drop Gate-to-Emitter Leakage Current 3.0 -- -- -- -- -- -- -- gfe ICES VFM IGES IC = 250A V mV/C VCE = VGE, IC = 1.0mA S VCE = 50V, IC = 40A, PW = 80s A mA V VGE = 0V, VCE = 600V VGE = 0V, VCE = 600V, TJ = 125C IF = 12A, VGE = 0V IF = 12A, VGE = 0V, TJ = 125C VGE = 20V, VCE = 0V 7,8,9 10 Switching Characteristics @ TJ = 25C (unless otherwise specified) Parameter Qg Qgc Qge Eon Eoff Etotal td(on) tr td(off) tf Eon Eoff Etotal td(on) tr td(off) tf Cies Coes Cres Coes eff. Coes eff. (ER) RBSOA trr Qrr Irr Total Gate Charge (turn-on) Gate-to-Collector Charge (turn-on) Gate-to-Emitter Charge (turn-on) Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Input Capacitance Output Capacitance Reverse Transfer Capacitance Effective Output Capacitance (Time Related) Min. -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. 68 24 10 95 100 195 20 5.0 115 6.0 165 150 315 19 6.0 125 13 1570 130 20 94 76 Max. Units 102 36 15 140 145 285 26 7.0 135 8.0 215 195 410 25 8.0 140 17 -- -- -- -- -- pF VGE = 0V VCC = 30V ns J ns J nC IC = 13A VCC = 400V VGE = 15V Conditions Ref.Fig 17 CT1 IC = 13A, VCC = 390V VGE = +15V, RG = 10, L = 200H TJ = 25C IC = 13A, VCC = 390V VGE = +15V, RG = 10, L = 200H TJ = 25C CT3 f CT3 fA f IC = 13A, VCC = 390V VGE = +15V, RG = 10, L = 200H TJ = 125C IC = 13A, VCC = 390V VGE = +15V, RG = 10, L = 200H TJ = 125C CT3 11,13 WF1,WF2 CT3 12,14 WF1,WF2 fA 16 Effective Output Capacitance (Energy Related) Reverse Bias Safe Operating Area Diode Reverse Recovery Time Diode Reverse Recovery Charge Peak Reverse Recovery Current g -- g -- -- f = 1Mhz VGE = 0V, VCE = 0V to 480V TJ = 150C, IC = 80A 15 3 CT2 FULL SQUARE -- -- -- -- -- -- 42 80 80 220 3.5 5.6 60 120 180 600 6.0 10 A nC ns VCC = 480V, Vp =600V Rg = 22, VGE = +15V to 0V TJ = 25C TJ = 125C TJ = 25C TJ = 125C TJ = 25C TJ = 125C IF = 12A, VR = 200V, di/dt = 200A/s IF = 12A, VR = 200V, di/dt = 200A/s IF = 12A, VR = 200V, di/dt = 200A/s 19 21 19,20,21,22 CT5 Notes: RCE(on) typ. = equivalent on-resistance = VCE(on) typ. / IC, where VCE(on) typ. = 2.05V and IC = 13A. ID (FET Equivalent) is the equivalent MOSFET ID rating @ 25C for applications up to 150kHz. These are provided for comparison purposes (only) with equivalent MOSFET solutions. VCC = 80% (VCES ), VGE = 15V, L = 28H, R G = 22. Pulse width limited by max. junction temperature. Energy losses include "tail" and diode reverse recovery. Data generated with use of Diode 8ETH06. Coes eff. is a fixed capacitance that gives the same charging time as Coes while V CE is rising from 0 to 80% VCES . Coes eff.(ER) is a fixed capacitance that stores the same energy as Coes while V CE is rising from 0 to 80% V CES. 2 www.irf.com IRGP20B60PDPBF 45 40 35 30 IC (A) 200 250 25 20 15 10 5 0 0 20 40 60 80 100 120 140 160 T C (C) Ptot (W) 150 100 50 0 0 20 40 60 80 100 120 140 160 T C (C) Fig. 1 - Maximum DC Collector Current vs. Case Temperature 100 Fig. 2 - Power Dissipation vs. Case Temperature 40 35 30 VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V VGE = 6.0V 10 25 ICE (A) 1 0 10 100 VCE (V) 1000 IC A) 20 15 10 5 0 0 1 2 3 VCE (V) 4 5 6 Fig. 3 - Reverse Bias SOA TJ = 150C; VGE =15V 40 35 30 25 ICE (A) 40 Fig. 4 - Typ. IGBT Output Characteristics TJ = -40C; tp = 80s 35 30 25 ICE (A) VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V VGE = 6.0V VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V 20 15 10 5 0 0 1 2 3 VCE (V) 4 5 6 20 15 10 5 0 0 1 2 3 VCE (V) 4 5 6 Fig. 5 - Typ. IGBT Output Characteristics TJ = 25C; tp = 80s Fig. 6 - Typ. IGBT Output Characteristics TJ = 125C; tp = 80s www.irf.com 3 IRGP20B60PDPBF 450 400 350 300 ICE (A) 10 9 8 T J = 25C TJ = 125C VCE (V) 7 6 5 4 3 2 1 0 ICE = 20A ICE = 13A ICE = 8.0A 250 200 150 100 50 0 0 5 10 VGE (V) 15 20 0 5 10 VGE (V) 15 20 Fig. 7 - Typ. Transfer Characteristics VCE = 50V; tp = 10s 10 9 8 7 VCE (V) () A 100 Fig. 8 - Typical VCE vs. VGE TJ = 25C ICE = 20A ICE = 13A ICE = 8.0A 6 5 4 3 2 1 0 0 5 10 In ta ta e u F r adC r e t - I s n n o s ow r ur n F T = 150C J 10 T = 125C J T= J 25C 15 20 1 0.4 0.8 1.2 1.6 2.0 2.4 VGE (V) Forward Voltage Drop - V FM (V) Fig. 9 - Typical VCE vs. VGE TJ = 125C 350 300 Swiching Time (ns) Fig. 10 - Typ. Diode Forward Characteristics tp = 80s 1000 250 Energy (J) EON 100 tdOFF 200 150 100 50 0 0 5 10 15 IC (A) 20 25 EOFF tdON 10 tF tR 1 0 5 10 15 20 25 IC (A) Fig. 11 - Typ. Energy Loss vs. IC TJ = 125C; L = 200H; VCE = 390V, RG = 10; VGE = 15V. Diode clamp used: 8ETH06 (See C.T.3) Fig. 12 - Typ. Switching Time vs. IC TJ = 125C; L = 200H; VCE = 390V, RG = 10; VGE = 15V. Diode clamp used: 8ETH06 (See C.T.3) 4 www.irf.com IRGP20B60PDPBF 250 1000 EON 200 td OFF Swiching Time (ns) 100 Energy (J) 150 EOFF tdON 10 tF tR 100 50 0 5 10 15 20 25 30 35 1 0 10 20 30 40 RG ( ) RG ( ) Fig. 13 - Typ. Energy Loss vs. RG TJ = 125C; L = 200H; VCE = 390V, ICE = 13A; VGE = 15V Diode clamp used: 8ETH06 (See C.T.3) 18 16 14 Fig. 14 - Typ. Switching Time vs. RG TJ = 125C; L = 200H; VCE = 390V, ICE = 13A; VGE = 15V Diode clamp used: 8ETH06 (See C.T.3) 10000 Cies 1000 10 8 6 4 2 0 0 100 200 300 400 500 600 700 Capacitance (pF) 12 Eoes (J) Coes 100 Cres 10 1 0 20 40 60 80 100 VCE (V) VCE (V) 16 14 Fig. 15- Typ. Output Capacitance Stored Energy vs. VCE 1.6 1.5 Fig. 16- Typ. Capacitance vs. VCE VGE= 0V; f = 1MHz Normalized V CE(on) (V) 0 10 20 30 40 50 60 70 80 12 10 VGE (V) 400V 1.4 1.3 1.2 1.1 1 0.9 0.8 0.7 0.6 -50 0 50 100 150 200 8 6 4 2 0 Q G , Total Gate Charge (nC) T J , Junction Temperature (C) Fig. 17 - Typical Gate Charge vs. VGE ICE = 13A Fig. 18 - Normalized Typical VCE(on) vs. Junction Temperature ICE = 13A, VGE = 15V www.irf.com 5 IRGP20B60PDPBF 80 20 I F = 16A IF = 8.0A F I F = 4.0A 60 VR = 200V TJ = 125C TJ = 25C 16 I F = 16A I F = 8.0A I F = 4.0A trr- (nC) 40 Irr- ( A) VR = 200V TJ = 125C TJ = 25C 1000 12 8 20 4 0 100 di f /dt - (A/s) 0 100 di f /dt - (A/s) 1000 Fig. 19 - Typical Reverse Recovery vs. dif/dt Fig. 20 - Typical Recovery Current vs. dif/dt 500 VR = 200V TJ = 125C TJ = 25C 400 10000 VR = 200V TJ = 125C TJ = 25C I F = 16A IF = 8.0A IF = 16A IF = 4.0A Qrr- (nC) di (rec) M/dt- (A /s) 300 I F = 8.0A IF = 4.0A 1000 200 100 0 100 di f /dt - (A/s) 1000 100 100 di f /dt - (A/s) 1000 Fig. 21 - Typical Stored Charge vs. dif/dt Fig. 22 - Typical di(rec)M/dt vs. dif/dt, 6 www.irf.com IRGP20B60PDPBF 1 D = 0.50 Thermal Response ( Z thJC ) 0.1 0.20 0.10 0.05 0.02 0.01 J J 1 R1 R1 2 R2 R2 R3 R3 3 R4 R4 C 1 2 3 4 4 Ri (C/W) 0.12003 0.05001 0.23292 0.17719 i (sec) 0.000034 0.000034 0.000970 0.011265 0.01 Ci= i/Ri Ci i/Ri SINGLE PULSE ( THERMAL RESPONSE ) Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 23. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) 10 Thermal Response ( Z thJC ) 1 D = 0.50 0.20 0.10 0.05 J R1 R1 J 1 2 R2 R2 C 1 2 0.1 0.02 0.01 SINGLE PULSE ( THERMAL RESPONSE ) Ri (C/W) i (sec) 0.8667 0.000121 1.6349 0.001726 Ci= i/Ri Ci i/Ri 0.01 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig. 24. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) www.irf.com 7 IRGP20B60PDPBF L L 0 DUT 1K VCC 80 V Rg DUT 480V Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit PFC diode L R= VCC ICM DUT / DRIVER Rg VCC Rg DUT VCC Fig.C.T.3 - Switching Loss Circuit Fig.C.T.4 - Resistive Load Circuit REVERSE RECOVERY CIRCUIT VR = 200V 0.01 L = 70H D.U.T. dif/dt ADJUST D G IRFP250 S Fig. C.T.5 - Reverse Recovery Parameter Test Circuit 8 www.irf.com IRGP20B60PDPBF 450 400 350 300 250 VCE (V) 200 150 100 50 0 -50 -0.20 Eoff Loss 5% V CE 90% ICE 18 16 tf 14 12 10 ICE (A) 8 6 4 2 0 -2 0.80 450 400 350 300 250 VCE (V) 200 150 100 50 0 -50 7.75 5% V CE Eon Loss tr 90% test current 10% test current TEST CURRENT 45 40 35 30 25 20 15 10 5 0 -5 8.15 ICE (A) 5% ICE 0.00 0.20 0.40 0.60 7.85 7.95 Time (s) 8.05 Time(s) Fig. WF1 - Typ. Turn-off Loss Waveform @ TJ = 125C using Fig. CT.3 Fig. WF2 - Typ. Turn-on Loss Waveform @ TJ = 125C using Fig. CT.3 3 IF 0 trr ta tb 4 2 Q rr I RRM 0.5 I RRM di(rec)M/dt 0.75 I RRM 5 1 di f /dt 4. Qrr - Area under curve defined by trr and IRRM trr X IRRM Qrr = 2 5. di(rec)M /dt - Peak rate of change of current during tb portion of trr 1. dif/dt - Rate of change of current through zero crossing 2. I RRM - Peak reverse recovery current 3. trr - Reverse recovery time measured from zero crossing point of negative going I F to point where a line passing through 0.75 I RRM and 0.50 IRRM extrapolated to zero current Fig. WF3 - Reverse Recovery Waveform and Definitions www.irf.com 9 IRGP20B60PDPBF TO-247AC Package Outline Dimensions are shown in millimeters (inches) TO-247AC Part Marking Information EXAMPLE: T HIS IS AN IRFPE30 WIT H ASSEMBLY LOT CODE 5657 ASSEMBLED ON WW 35, 2000 IN THE AS SEMBLY LINE "H" Note: "P" in assembly line position indicates "Lead-Free" INT ERNATIONAL RECT IFIER LOGO ASSEMBLY LOT CODE PART NUMBER IRFPE30 56 035H 57 DAT E CODE YEAR 0 = 2000 WEEK 35 LINE H TO-247AC package is not recommended for Surface Mount Application. Data and specifications subject to change without notice. This product has been designed and qualified for Industrial market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 07/04 10 www.irf.com Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ |
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