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| PD 95389 IRG4RC10KPBF INSULATED GATE BIPOLAR TRANSISTOR Features * Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10s @ 125C, VGE = 15V * Generation 4 IGBT design provides higher efficiency than Generation 3 * Industry standard TO-252AA package * Lead-Free C Short Circuit Rated UltraFast IGBT VCES = 600V G E VCE(on) typ. = 2.39V @VGE = 15V, IC = 5.0A n-channel Benefits * Generation 4 IGBT's offer highest efficiency available * IGBT's optimized for specified application conditions D-PAK TO-252AA Absolute Maximum Ratings Parameter VCES IC @ TC = 25C IC @ TC = 100C ICM ILM tsc VGE EARV PD @ T C = 25C PD @ T C = 100C TJ TSTG Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Short Circuit Withstand Time Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. 600 9.0 5.0 18 18 10 20 34 38 15 -55 to + 150 300 (0.063 in. (1.6mm) from case ) Units V A s V mJ W C Thermal Resistance Parameter RJC RJA Wt Junction-to-Case Junction-to-Ambient (PCB mount)* Weight Typ. --- --- 0.3 (0.01) Max. 3.3 50 --- Units C/W g (oz) * When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994 www.irf.com 1 06/10/04 IRG4RC10KPBF Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)CES V(BR)ECS V(BR)CES/TJ VCE(ON) VGE(th) VGE(th)/TJ gfe ICES IGES Parameter Min. Typ. Collector-to-Emitter Breakdown Voltage 600 -- Emitter-to-Collector Breakdown Voltage 18 -- Temperature Coeff. of Breakdown Voltage -- 0.58 -- 2.39 Collector-to-Emitter Saturation Voltage -- 3.25 -- 2.63 Gate Threshold Voltage 3.0 -- Temperature Coeff. of Threshold Voltage -- -11 Forward Transconductance 1.2 1.8 -- -- Zero Gate Voltage Collector Current -- -- -- -- Gate-to-Emitter Leakage Current -- -- Max. Units Conditions -- V VGE = 0V, IC = 250A -- V VGE = 0V, IC = 1.0A -- V/C VGE = 0V, IC = 1.0mA VGE = 15V 2.62 IC = 5.0A -- IC = 9.0A See Fig.2, 5 V -- IC = 5.0A , TJ = 150C 6.5 VCE = VGE, IC = 250A -- mV/C VCE = VGE, IC = 250A -- S VCE = 50 V, IC = 5.0A 250 VGE = 0V, VCE = 600V A 2.0 VGE = 0V, VCE = 10V, TJ = 25C 1000 VGE = 0V, VCE = 600V, TJ = 150C 100 nA VGE = 20V Switching Characteristics @ TJ = 25C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets tsc td(on) tr td(off) tf Ets LE Cies Coes Cres Notes: Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Short Circuit Withstand Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. -- -- -- -- -- -- -- -- -- -- 10 -- -- -- -- -- -- -- -- -- Typ. Max. Units Conditions 19 29 IC = 5.0A 2.9 4.3 nC VCC = 400V See Fig.8 9.8 15 VGE = 15V 11 -- 24 -- TJ = 25C ns 51 77 IC = 5.0A, VCC = 480V 190 290 VGE = 15V, R G = 100 0.16 -- Energy losses include "tail" 0.10 -- mJ See Fig. 9,10,14 0.26 0.32 -- -- s VCC = 400V, TJ = 125C VGE = 15V, R G = 100 , VCPK < 500V 11 -- TJ = 150C, 27 -- IC = 5.0A, VCC = 480V ns 67 -- VGE = 15V, R G = 100 350 -- Energy losses include "tail" 0.47 -- mJ See Fig. 10,11,14 7.5 -- nH Measured 5mm from package 220 -- VGE = 0V 29 -- pF VCC = 30V See Fig. 7 7.5 -- = 1.0MHz Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. ( See fig. 13b ) Repetitive rating; pulse width limited by maximum junction temperature. VCC = 80%(VCES), VGE = 20V, L = 10H, RG = 100, (See fig. 13a) Pulse width 80s; duty factor 0.1%. Pulse width 5.0s, single shot. 2 www.irf.com IRG4RC10KPBF 4 For both: Triangular wave: 3 Load Current (A) Duty cycle: 50% T = 125C J T sink= 55C Gate drive as specified Power Dissipation = 1.4W Clamp voltage: 80% of rated Square wave: 2 60% of rated voltage 1 Ideal diodes 0 0.1 1 10 A 100 f, Frequency (kHz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 100 100 TJ = 25 C 10 I C , Collector-to-Emitter Current (A) I C, Collector Current (A) 10 T = 150 C J TJ = 150 C TJ = 25 C 1 5 10 1 1.0 V GE = 15V 20s PULSE WIDTH 2.0 3.0 4.0 5.0 6.0 7.0 VCC = 50V 5s PULSE WIDTH 15 20 VCE , Collector-to-Emitter Voltage (V) VGE , Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics 5s PULSE WIDTH www.irf.com 3 IRG4RC10KPBF 10 5.0 8 VCE , Collector-to-Emitter Voltage(V) VGE = 15V 80 us PULSE WIDTH Maximum DC Collector Current(A) IC = 10 A 4.0 6 3.0 IC = 5A 4 2.0 IC = 2.5 A 2 0 25 50 75 100 125 150 1.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 TC , Case Temperature ( C) TJ , Junction Temperature ( C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature 10 Thermal Response (Z thJC ) D = 0.50 1 0.20 0.10 0.05 0.1 0.02 0.01 PDM SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = PDM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 0.01 0.00001 t1 , Rectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4RC10KPBF 400 VGE , Gate-to-Emitter Voltage (V) VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc 20 VCC = 400V I C = 5.0A 16 C, Capacitance (pF) 300 Cies 200 12 8 100 Coes Cres 0 1 10 100 4 0 0 4 8 12 16 20 VCE , Collector-to-Emitter Voltage (V) QG , Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 0.28 Total Switching Losses (mJ) 0.26 Total Switching Losses (mJ) VCC = 480V VGE = 15V TJ = 25 C I C = 5A 10 100 RG = Ohm VGE = 15V VCC = 480V 0.24 1 IC = 10 A IC = 5A 0.22 IC = 2.5 A 0.20 0 20 40 60 80 100 0.1 -60 -40 -20 0 20 40 60 80 100 120 140 160 RG , Gate Resistance ( ) TJ , Junction Temperature ( C ) Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Junction Temperature www.irf.com 5 IRG4RC10KPBF 1.2 Total Switching Losses (mJ) 0.8 I C , Collector Current (A) RG TJ VCC 1.0 VGE = 100 Ohm = 150 C = 480V = 15V 100 VGE = 20V T J = 125 oC 10 0.6 0.4 SAFE OPERATING AREA 0.2 1 2 4 6 8 10 1 10 100 1000 I C , Collector Current (A) VCE , Collector-to-Emitter Voltage (V) Fig. 11 - Typical Switching Losses vs. Collector Current Fig. 12 - Turn-Off SOA L 50V 1000V VC * D.U.T. RL = 0 - 480V 480V 4 X I C@25C c 480F 960V d * Driver same type as D.U.T.; Vc = 80% of Vce(max) * Note: Due to the 50V power supply, pulse width and inductor will increase to obtain rated Id. Fig. 13a - Clamped Inductive Load Test Circuit Fig. 13b - Pulsed Collector Current Test Circuit IC L Driver* 50V D.U.T. VC Fig. 14a - Switching Loss Test Circuit * Driver same type as D.U.T., VC = 480V A 6 1000V d e www.irf.com IRG4RC10KPBF c d 90% e VC 90% 10% t d(off) Fig. 14b - Switching Loss Waveforms 10% I C 5% t d(on) tr E on E ts = (Eon +Eoff ) tf t=5s E off www.irf.com 7 IRG4RC10KPBF D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches) 6.73 (.265) 6.35 (.250) -A5.46 (.215) 5.21 (.205) 4 6.45 (.245) 5.68 (.224) 6.22 (.245) 5.97 (.235) 1.02 (.040) 1.64 (.025) 1 2 3 0.51 (.020) MIN. 10.42 (.410) 9.40 (.370) LEAD ASSIGNMENTS 1 - GATE 2 - DRAIN 3 - SOURCE 4 - DRAIN 3X 2X 1.14 (.045) 0.76 (.030) 0.89 (.035) 0.64 (.025) 0.25 (.010) M AMB NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 4.57 (.180) 2 CONTROLLING DIMENSION : INCH. 3 CONFORMS TO JEDEC OUTLINE TO-252AA. 4 DIMENSIONS SHOWN ARE BEFORE SOLDER DIP, SOLDER DIP MAX. +0.16 (.006). 0.58 (.023) 0.46 (.018) 1.27 (.050) 0.88 (.035) 2.38 (.094) 2.19 (.086) 1.14 (.045) 0.89 (.035) 0.58 (.023) 0.46 (.018) -B1.52 (.060) 1.15 (.045) 2.28 (.090) D-Pak (TO-252AA) Part Marking Information EXAMPLE: T HIS IS AN IRFR120 WITH AS S EMBLY LOT CODE 1234 ASS EMBLED ON WW 16, 1999 IN THE AS S EMBLY LINE "A" N ote: "P" in as sembly line pos ition indicates "Lead-Free" PART NUMBER INT ERNATIONAL RECTIFIER LOGO IRFR120 12 916A 34 AS S EMBLY LOT CODE DATE CODE YEAR 9 = 1999 WEEK 16 LINE A OR PART NUMBER INTERNATIONAL RECT IFIER LOGO IRFR120 12 P916A 34 AS S EMBLY LOT CODE DAT E CODE P = DES IGNAT ES LEAD-FREE PRODUCT (OPTIONAL) YEAR 9 = 1999 WEEK 16 A = AS S EMBLY S ITE CODE 8 www.irf.com IRG4RC10KPBF D-Pak (TO-252AA) Tape & Reel Information Dimensions are shown in millimeters (inches) TR TRR TRL 16.3 ( .641 ) 15.7 ( .619 ) 16.3 ( .641 ) 15.7 ( .619 ) 12.1 ( .476 ) 11.9 ( .469 ) FEED DIRECTION 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH 16 mm NOTES : 1. OUTLINE CONFORMS TO EIA-481. Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 06/04 www.irf.com 9 Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ |
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