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| SMOS44N80 Power MOSFETs S D Dimensions SOT-227(ISOTOP) Dim. A B C D E F G H J K Millimeter Min. Max. 31.50 7.80 4.09 4.09 4.09 14.91 30.12 37.80 11.68 8.92 0.76 12.60 25.15 1.98 4.95 26.54 3.94 4.72 24.59 -0.05 3.30 0.780 31.88 8.20 4.29 4.29 4.29 15.11 30.30 38.20 12.22 9.60 0.84 12.85 25.42 2.13 5.97 26.90 4.42 4.85 25.07 0.1 4.57 0.830 Inches Min. Max. 1.240 0.307 0.161 0.161 0.161 0.587 1.186 1.489 0.460 0.351 0.030 0.496 0.990 0.078 0.195 1.045 0.155 0.186 0.968 -0.002 0.130 19.81 1.255 0.323 0.169 0.169 0.169 0.595 1.193 1.505 0.481 0.378 0.033 0.506 1.001 0.084 0.235 1.059 0.174 0.191 0.987 0.004 0.180 21.08 S G L M N O P Q G=Gate, D=Drain,S=Source R S T U V W Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt TJ=25oC to 150oC Test Conditions Maximum Ratings 800 800 20 30 44 176 44 64 Unit V TJ=25oC to 150oC; RGS=1M Continuous Transient TC=25oC; Chip capability TC=25oC; pulse width limited by TJM TC=25 C TC=25oC IS TJ IDM; di/dt 100A/us; VDD VDSS' 150oC; RG=2 o V A A A mJ V/ns 5 PD TJ TJM Tstg EAS VISOL TC=25oC 700 -55...+150 150 -55...+150 W o C TC=25 C 50/60Hz,RMS IISOL 1mA t=1 min t=1 s o 4 2500 3000 1.5/13 1.5/13 30 J V~ Md Mounting torque Terminal connection torque Nm/Ib.in. g Weight SMOS44N80 Power MOSFETs (TJ=25oC, unless otherwise specified) Symbol VDSS VGS(th) IGSS IDSS RDS(on) Test Conditions VGS=0V; ID=3 mA VDS=VGS; ID=8 mA VGS=20VDC; VDS=0 VDS=VDSS; TJ=25oC VGS=0V; TJ=125oC VGS=10V; ID=0.5ID25 Pulse test, t 300us; duty cycle d 2% Characteristic Values min. typ. max. 800 2 4.5 200 100 2 0.145 Unit V V nA uA mA (TJ=25oC, unless otherwise specified) Symbol gts Cies Coes Cres Qg(on) Qgs Qgd td(on) tr td(off) tf RthJC RthCK Test Conditions VDS=15V; ID=0.5ID25; pulse test VGS=0V; VDS=25V; f=1MHz Characteristic Values min. typ. max. 32 45 14500 1300 330 380 70 170 35 48 100 24 0.18 0.05 Unit S pF VGS=10V; VDS=0.5VDSS'; ID=0.5ID25 nC ns ns ns ns K/W K/W VGS=10V; VDS=0.5VDSS; ID=0.5ID25 RG=1 (External) Source-Drain Diode Symbol IS ISM VSD trr QRM IRM Test Conditions VGS=0V Repetitive; pulse width limited by TJM IF=IS; VGS=0V; Pulse test, t 300us, duty cycle d IF=25A; -di/dt=100A/us; VR=100V; 2% (TJ=25oC, unless otherwise specified) Characteristic Values min. typ. max. 44 175 1.3 250 1.2 8 Unit A A V ns uC A |
Price & Availability of SMOS44N80
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