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| BL FEATURES GALAXY ELECTRICAL VOLTAGE RANGE: 100 V CURRENT: 100 mA BAT41 SMALL SIGNAL SCHOTTKY DIODES For general purpose applications This diode features very low turn-on voltage and fast switching. These devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges DO - 35(GLASS) MECHANICAL DATA Case:JEDEC DO--35,glass case Polarity: Color band denotes cathode end Weight: Approx. 0.13 gram ABSOLUTE RATINGS Symbols Continuous reverse voltage Forw ard continuous current Repetitive peak forward current Surge forw ard current Pow er dissipation Value 100 100 350 750 100 1) 1) 1) 1) UNITS V mA mA mA mW V RRM @TA=25 tpU1s,|AU0.5 @tpU10ms @TA =95 IF I FRM I FSM P tot TJ TL TSTG Junction temperature Ambient operating temperature range Storage temperature range 1) On infinite heatsink with 4mm lead length. -55 ---+ 125 230 c-55 ---+ 150 ELECTRICAL CHARACTERISTICS Symbols Reverse breakdown voltage @IR=100 A,Tj=25 Forw ard voltage @ I F=1mA,Tj=25 @ IF=200mA,Tj=25 Leakage current VR=50V @Tj=25 @Tj=100 Min. 100 - Typ. 0.4 - Max. 0.45 UNITS V V BR VF V 1.0 0.1 20 20 300 1) IR CJ RJA A pF /W - Junction capacitance at VR=1V,f=1MHz Thermal resistance junction to ambient 2)Pulse test tp<300 s, <2% www.galaxycn.com Document Number 0265023 BLGALAXY ELECTRICAL 1. RATINGS AND CHARACTERISTIC CURVES FIG.1 -- ADMISSIBLE POWER DISSIPATION VS. AMBIENT TEMPERATURE BAT41 FIG. 2--TYPICAL INSTANTANEOUS FORWORD CHARACTERISTICS 1000 FORWARD CURRENT , 100 100 TJ=125 MICRO AMPERES T J= 25 10 50 1 T J= -4 0 0.1 0 0.01 100 200 0 0.2 0.4 0.6 0.8 1.0 1.2 AMBIENT TEMPERATURE( ae ) FORWARD VOLTAGE,VOLT FIG. 3 -- TYPICAL REVERSE CHARACTERISTICS FIG.4 -- TYPICAL JUNCTION CAPACITANCE 1000 14 JUNCTION CAPACITANCE,pF REBERSE LEAKAGE CURRENT, MILLI AMPERES 100 T J= 1 2 5 100 12 10 8 6 4 2 0 10 75 1 50 25 0 .1 0 .0 1 0 5 10 15 20 25 30 5 10 15 20 25 30 REVERSE VOLTAGE, VOLT REVERSE VOLTAGE, VOLT www.galaxycn.com Document Number 0265009 BLGALAXY ELECTRICAL 2. |
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