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| (R) BYT01-400 HIGH EFFICIENCY ULTRAFAST DIODE MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM Tj (max) VF (max) trr (max) 1A 400 V 150C 1.4 V 25 ns FEATURES AND BENEFITS Very low conduction losses Negligible switching losses Low forward & reverse recovery times s s s DO-15 BYT01-400 DESCRIPTION The BYT01-400 which is using ST's 400V planar technology, is specially suited for switching mode base drive & transistor circuits. The device, which is available in axial (DO-15) package, is also intended for use as a free wheeling diode in power supplies and other power switching applications. ABSOLUTE RATINGS (limiting values) Symbol VRRM IF (AV) IFSM Tstg Tj Parameter Repetive peak reverse voltage Average forward current Surge non repetitive forward current Storage temperature range Maximum operating junction temperature TI = 80C = 0.5 Value 400 1 30 - 65 to +150 150 Unit V A A C C tp = 10ms Sinusoidal October 2001 - Ed: 2A 1/5 BYT01-400 THERMAL PARAMETERS Symbol Rth(j-a) Junction to ambient* Parameter Value 45 Unit C/W * On infinite heatsink with 10mm lead length. STATIC ELECTRICAL CHARACTERISTICS Symbol IR* Parameters Reverse leakage current Test Conditions Tj = 25C Tj = 100C VF** Forward voltage drop Tj = 25C Tj = 100C Pulse test: * tp = 5ms, < 2% ** tp = 380s, < 2% To evaluate the maximum conduction losses use the following equation: P = 1.1 x IF(AV) + 0.25 IF2(RMS) IF = 1A 1.0 VR = VRRM 0.1 Min. Typ. Max. 20 0.5 1.5 1.4 Unit A mA V DYNAMIC ELECTRICAL CHARACTERISTICS Symbol trr Parameter Reverse recovery time Tj = 25C Test Conditions IF = 0.5A IR = 1A Irr = 0.25A IF = 1A dIF/dt = - 15A/s VR = 30V tfr Forward recovery time Forward recovery voltage Tj = 25C IF = 1A dIF/dt = 50A/s VFR = 1.1 x VFmax IF = 1A dIF/dt = 50A/s 60 Min. Typ. 16 Max. 25 Unit ns 55 ns VFP Tj = 25C 9.5 V 2/5 BYT01-400 Fig. 1: Average forward power dissipation versus average forward current. PF(av)(W) 1.8 1.6 1.4 1.2 1.0 =1 = 0.05 = 0.1 = 0.2 = 0.5 Fig. 2: Average forward current versus ambient temperature ( = 0.5) IF(av)(A) 1.2 Rth(j-a)=Rth(j-l) 1.0 0.8 0.6 0.8 0.6 0.4 0.2 0.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 T Rth(j-a)=100C/W 0.4 0.2 IF(av)(A) =tp/T Tamb(C) tp 0.0 0 25 50 75 100 125 150 Fig. 3: Thermal resistance versus lead length. Fig. 4: Relative variation of thermal impedance junction ambient versus pulse duration (printed circuit board epoxy FR4, Lleads = 10mm). Zth(j-a)/Rth(j-a) 1.0 Rth(C/W) 110 Rth(j-a) 100 90 80 70 60 50 40 30 20 10 0 5 10 15 20 25 0.9 0.8 0.7 0.6 Rth(j-l) = 0.5 0.5 0.4 0.3 0.2 = 0.2 = 0.1 Single pulse T Lleads(mm) 0.1 0.0 tp(s) 1.E+00 1.E+01 =tp/T 1.E+02 tp 1.E-01 1.E+03 Fig. 5: Forward voltage drop versus forward current. Fig. 6: Junction capacitance versus reverse voltage applied (typical values). C(pF) 10 9 F=1MHz Vosc=30mV Tj=25C IFM(A) 100.0 Tj=100C (Typical values) 8 7 10.0 Tj=100C (Maximum values) 6 5 4 1.0 Tj=25C (Maximum values) 3 2 1 0 VFM(V) 0.1 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 VR(V) 1 10 100 1000 3/5 BYT01-400 Fig. 7: Forward recovery time versus dIF/dt (90% confidence). tfr(ns) 100 IF=1A Tj=100C Fig. 8. Transient peak forward voltage versus dIF/dt (90% confidence). VFP(V) 15.0 IF=1A Tj=100C 80 12.5 10.0 60 7.5 40 5.0 20 2.5 dIF/dt(A/s) 0 0 10 20 30 40 50 60 70 80 90 100 dIF/dt(A/s) 0.0 0 10 20 30 40 50 60 70 80 90 100 Fig. 9: Peak reverse recovery current versus dIF/dt (90% confidence). IRM(A) 2.5 IF=1A VR=200V Fig. 10: Dynamic parameters versus junction temperature. % 300 IF=1A dIF/dt=-50A/s VR=30V Qrr 2.0 250 1.5 Tj=100C trr 200 IRM 1.0 150 0.5 Tj=25C dIF/dt(A/s) 0.0 1 10 100 Tj(C) 100 25 50 75 100 125 150 Fig. 11: Non repetitive surge peak current versus number of cycles. IFSM(A) 35 Tj initial=25C 30 25 20 15 10 5 Number of cycles 0 1 10 100 1000 4/5 BYT01-400 PACKAGE MECHANICAL DATA DO-15 C A C D B DIMENSIONS REF. Millimeters Min. A B C D 6.05 2.95 26 0.71 Inches Min. 0.238 0.116 1.024 0.028 Max. 6.75 3.53 31 0.88 Max. 0.266 0.139 1.220 0.035 Ordering code BYT01-400 BYT01-400RL s Marking BYT01-400 BYT01-400 Package DO-15 DO-15 Weight 0.4 g 0.4 g Base qty 1000 6000 Delivery mode Ammopack Tape & Reel s s Cooling method: by conduction (method A) Epoxy meets UL 94,V0 Bending method: Application note AN1471 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics (c) 2001 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia -Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 5/5 |
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