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Advance Technical Data
HiPerFAST TM IGBT with Diode
IXGK 60N60C2D1 VCES IXGX 60N60C2D1 IC25 VCE(sat) C2-Class High Speed IGBTs tfi(typ)
= 600 V = 75 A = 2.5 V = 35 ns
Symbol V CES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg Md Weight
Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 1 M Continuous Transient TC = 25C (limited by leads) TC = 110C TC = 25C, 1 ms VGE = 15 V, TVJ = 125C, RG = 10 Clamped inductive load @ VCE 600 V TC = 25C
Maximum Ratings 600 600 20 30 75 60 300 ICM = 100 480 -55 ... +150 150 -55 ... +150 V V V V A A A A
TO-264 AA (IXGK)
(TAB) C E
G
PLUS247 (IXGX)
(TAB)
G = Gate E = Emitter
C = Collector Tab = Collector
W C C C Features * Very high frequency IGBT and anti-parallel FRED in one package * Square RBSOA * High current handling capability * MOS Gate turn-on for drive simplicity * Fast Recovery Epitaxial Diode (FRED) with soft recovery and low IRM Applications * Switch-mode and resonant-mode power supplies * Uninterruptible power supplies (UPS) * DC choppers * AC motor speed control * DC servo and robot drives
Mounting torque, TO-264 TO-264 PLUS247
1.13/10 Nm/lb.in. 10 6 300 g g C
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s
Symbol
Test Conditions
Characteristic Values (TJ = 25C, unless otherwise specified) Min. Typ. Max. 3.0 TJ = 25C TJ = 125C 5.0 650 5 100 TJ = 25C TJ = 125C 2.1 1.8 2.5 V A mA nA V V
VGE(th) ICES IGES VCE(sat)
IC
= 250 A, VCE = VGE
VCE = VCES VGE = 0 V VCE = 0 V, VGE = 20 V IC = 50 A, VGE = 15 V Note 1
Advantages * Space savings (two devices in one package) * Easy to mount with 1 screw
(c) 2003 IXYS All rights reserved
DS99044A(09/03)
IXGK 60N60C2D1 IXGX 60N60C2D1
Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) Min. Typ. Max. 40 58 3900 280 97 146 28 50 18 Inductive load, TJ = 25C IC = 50 A, VGE = 15 V VCE = 400 V, RG = Roff = 2.0 25 95 150 35 0.48 18 25 0.9 130 80 1.2 0.15 S pF pF pF nC nC nC
Dim. Millimeter Min. Max. 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83 Min. Inches Max.
TO-264 AA Outline
gfs Cies Coes Cres Qg Qge Qgc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK
IC = 50 A; VCE = 10 V, Note 1 VCE = 25 V, VGE = 0 V, f = 1 MHz
IC = 50 A, VGE = 15 V, VCE = 0.5 VCES
ns ns ns ns 0.8 mJ ns ns mJ ns ns mJ 0.26 K/W K/W
Inductive load, TJ = 125C IC = 50 A, VGE = 15 V VCE = 400 V, RG = Roff = 2.0
A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T
.190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072
PLUS247 Outline
Reverse Diode (FRED) Symbol VF IRM t rr RthJC Test Conditions IF = 60 A, VGE = 0 V, Note 1
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. TJ = 150C 2.1 1.4 8.3 35 V A ns 0.85 K/W
Terminals: 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) 4 - Drain (Collector)
IF = 60 A, VGE = 0 V, -diF/dt = 100 A/ TJ = 100C VR = 100 V IF = 1 A; -di/dt = 200 A/ms; VR = 30 V
Note 1: Pulse test, t 300 s, duty cycle 2 %
Dim. A A1 A2 b b1 b2 C D E e L L1 Q R
Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83
Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
IXGK 60N60C2D1 IXGX 60N60C2D1
Fig. 1. Output Characteristics @ 25 Deg. C
1 00 90 80 VG E = 15V 13V 11 V 9V 1 75 1 50 200 VG E = 15V 13V 11 V 9V
Fig. 2. Extended Output Characteristics @ 25 deg. C
I C - Amperes
70 60 50 40 30 20 1 0 0 0.5 1 1 .5 2 2.5
I C - Amperes
7V
1 25 1 00 75 50
7V
5V
25 0
5V 1 1 .5 2 2.5 3 3.5 4 4.5
3
3.5
V CE - Volts
V CE - Volts
Fig. 3. Output Characteristics @ 125 Deg. C
1 00 90 80 70 VGE = 15V 13V 11 V 9V 1 .1 1 .2
Fig. 4. Temperature Dependence of V CE(sat)
VC E (sat) - Normalized
VG E = 15V 1 0.9 0.8 0.7
I C = 100A
I C - Amperes
7V
60 50 40 30 20 1 0 0 0.5 1 1 .5 2 2.5 3 3.5
I C = 50A
5V
I C = 25A 0.6 0.5 25 50 75 1 00 1 25 1 50
V CE - Volts
TJ - Degrees Centigrade
Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter voltage
5 4.5 4 T J = 25 C 200 1 75 1 50
Fig. 6. Input Admittance
VCE - Volts
3.5 3 2.5 2 1 .5 1 5 6 7 8 9 1 0 1 1 1 2 1 3 1 4 1 5
I C - Amperes
1 25 1 00 75 50 25 0 3.5 4 4.5 5 5.5 6 6.5 7 7.5 8 8.5 T J = 125 C 25 C -40 C
I C = 100A
50A 25A
V GE - Volts
(c) 2003 IXYS All rights reserved
V GE - Volts
IXGK 60N60C2D1 IXGX 60N60C2D1
Fig. 7. Transconductance
1 00 90 80 T J = -40 C 25 C 125 C
Fig. 8. Dependence of Eoff on RG
6 5 TJ = 125 C VGE = 15V VCE = 400V I C = 100A
E off - milliJoules
g f s - Siemens
70 60 50 40 30 20 1 0 0 0 25
4 I C = 75A 3 2 1 0 I C = 50A I C = 25A
50
75
1 00
1 25
1 50
1 75
200
2
4
6
8
1 0
1 2
1 4
1 6
I C - Amperes
R G - Ohms
Fig. 9. Dependence of Eoff on IC
5 R G = 2 Ohms R G = 10 Ohms - - - - 4 5
Fig. 10. Dependence of Eoff on Temperature
R G = 2 Ohms R G= 10 Ohms - - - - 4
I C = 100A
E off - MilliJoules
3
T J = 125 C
E off - milliJoules
VG E = 15V VC E = 400V
VG E = 15V VC E = 400V I C = 75A
3
2 T J = 25 C 1
2 I C = 50A 1 I C = 25A 25 50 75 1 00 1 25
0 20 30 40 50 60 70 80 90 1 00
0
I C - Amperes
TJ - Degrees Centigrade
Fig. 11. Gate Charge
1 5 VC E = 300V I C = 50A I G = 10mA 1 0000
Fig. 12. Capacitance
f = 1M Hz C ies 1 000 C oes 1 00 C res
1 2
VG E - Volts
9
6
3
0 0 20 40 60 80 1 00 1 20 1 40 1 60
Capacitance - pF
1 0 0 5 1 0 1 5 20 25 30 35 40
Q G - nanoCoulombs
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents:
V CE - Volts
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
IXGK 60N60C2D1 IXGX 60N60C2D1
160 A 140 IF 120 100 80 60 40 20 0 0 1 VF 2 V 0 100 A/s 1000 -diF/dt 0 0 200 400 600 A/s 1000 800 -diF/dt 4000 nC
TVJ= 100C VR = 300V
80 A
TVJ= 100C VR = 300V
TVJ= 25C TVJ=100C
3000 Qr 2000
IF=120A IF= 60A IF= 30A
60 IRM 40
TVJ=150C
1000 20
IF=120A IF= 60A IF= 30A
Fig. 12 Forward current IF versus VF
Fig. 13 Reverse recovery charge Qr versus -diF/dt
140 ns 130
Fig. 14 Peak reverse current IRM versus -diF/dt
20 V VFR 15 1.6 s tfr
2.0
TVJ= 100C VR = 300V
1.5 Kf 1.0
trr 120 110
IRM
100 0.5
IF=120A IF= 60A IF= 30A
tfr
10
VFR
1.2
0.8
Qr
5 90 80 0
0.4
0.0
TVJ= 100C IF = 60A
0 200 400
0
40
80
120 C 160 TVJ
0
200
400
600 -diF/dt
800 A/s 1000
0.0 600 A/s 1000 800 diF/dt
Fig. 15 Dynamic parameters Qr, IRM versus TVJ
1 K/W 0.1 ZthJC 0.01
Fig. 16 Recovery time trr versus -diF/dt
Fig. 17 Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation: i 1 2 3 4 Rthi (K/W) 0.3073 0.3533 0.0887 0.1008 ti (s) 0.0055 0.0092 0.0007 0.0399
0.001
0.0001 0.00001
DSEP 2x61-06A
0.0001
0.001
0.01
0.1
s t
1
Fig. 18 Transient thermal resistance junction to case
(c) 2003 IXYS All rights reserved

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