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Freescale Semiconductor Technical Data Document Number: MW4IC2020N Rev. 9, 5/2006 RF LDMOS Wideband Integrated Power Amplifiers The MW4IC2020N wideband integrated circuit is designed with on - chip matching that makes it usable from 1600 to 2400 MHz. This multi - stage structure is rated for 26 to 28 Volt operation and covers all typical cellular base station modulation formats. Final Application * Typical Two - Tone Performance: VDD = 26 Volts, IDQ1 = 80 mA, IDQ2 = 200 mA, IDQ3 = 300 mA, Pout = 20 Watts PEP, Full Frequency Band Power Gain -- 29 dB IMD -- - 32 dBc Drain Efficiency -- 26% (at 1805 MHz) and 20% (at 1990 MHz) Driver Applications * Typical GSM EDGE Performance: VDD = 26 Volts, IDQ1 = 80 mA, IDQ2 = 230 mA, IDQ3 = 230 mA, Pout = 5 Watts Avg., Full Frequency Band Power Gain -- 29 dB Spectral Regrowth @ 400 kHz Offset = - 66 dBc Spectral Regrowth @ 600 kHz Offset = - 77 dBc EVM -- 1% rms * Typical CDMA Performance: VDD = 26 Volts, IDQ1 = 80 mA, IDQ2 = 240 mA, IDQ3 = 250 mA, Pout = 1 Watt Avg., Full Frequency Band, IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13), Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain -- 30 dB ACPR @ 885 kHz Offset = - 61 dBc in 30 kHz Bandwidth ALT1 @ 1.25 MHz Offset = - 69 dBc in 12.5 kHz Bandwidth ALT2 @ 2.25 MHz Offset = - 59 dBc in 1 MHz Bandwidth * Capable of Handling 3:1 VSWR, @ 26 Vdc, 1990 MHz, 8 Watts CW Output Power * Stable into a 3:1 VSWR. All Spurs Below - 60 dBc @ 100 mW to 8 W CW Pout. * Characterized with Series Equivalent Large - Signal Impedance Parameters * On - Chip Matching (50 Ohm Input, DC Blocked, >5 Ohm Output) * Integrated Temperature Compensation with Enable/Disable Function * On - Chip Current Mirror gm Reference FET for Self Biasing Application (1) * Integrated ESD Protection * 200C Capable Plastic Package * N Suffix Indicates Lead - Free Terminations. RoHS Compliant. * In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel VRD1 VRG1 VDS2 VDS1 MW4IC2020NBR1 MW4IC2020GNBR1 1805- 1990 MHz, 20 W, 26 V GSM/GSM EDGE, CDMA RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERS CASE 1329 - 09 TO - 272 WB - 16 PLASTIC MW4IC2020NBR1 CASE 1329A - 03 TO - 272 WB - 16 GULL PLASTIC MW4IC2020GNBR1 GND VDS2 VRD1 VRG1 VDS1 3 Stages IC RFin VDS3/RFout 1 2 3 4 5 6 7 8 9 10 11 16 15 GND 14 VDS3/ RFout RFin VGS1 VGS2 VGS3 Quiescent Current Temperature Compensation VGS1 VGS2 VGS3 GND 13 12 GND (Top View) Note: Exposed backside flag is source terminal for transistors. Figure 1. Functional Block Diagram Figure 2. Pin Connections 1. Refer to AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1987. (c) Freescale Semiconductor, Inc., 2006. All rights reserved. MW4IC2020NBR1 MW4IC2020GNBR1 1 RF Device Data Freescale Semiconductor Table 1. Maximum Ratings Rating Drain- Source Voltage Gate- Source Voltage Storage Temperature Range Operating Junction Temperature Input Power Symbol VDSS VGS Tstg TJ Pin Value - 0.5, +65 - 0.5, +15 - 65 to +175 200 20 Unit Vdc Vdc C C dBm Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Stage 1 Stage 2 Stage 3 Symbol RJC Value (1) 10.5 5.1 2.3 Unit C/W Table 3. ESD Protection Characteristics Test Conditions Human Body Model Machine Model Charge Device Model Class 2 (Minimum) M3 (Minimum) C5 (Minimum) Table 4. Moisture Sensitivity Level Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating 3 Package Peak Temperature 260 Unit C Table 5. Electrical Characteristics (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Functional Tests (In Freescale Wideband 1805 - 1990 MHz Test Fixture, 50 ohm system) VDD = 26 Vdc, IDQ1 = 80 mA, IDQ2 = 200 mA, IDQ3 = 300 mA, Pout = 20 W PEP, f1 = 1990 MHz, f2 = 1990.1 MHz and f1 = 1805 MHz, f2 = 1805.1 MHz, Two - Tone CW Power Gain Drain Efficiency f1 = 1805 MHz, f2 = 1805.1 MHz f1 = 1990 MHz, f2 = 1990.1 MHz Input Return Loss Intermodulation Distortion Gps D 27 24 18 -- -- 29 26 20 -- - 32 - 10 - 27 dB dBc -- -- dB % IRL IMD Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 26 Vdc, IDQ1 = 80 mA, IDQ2 = 200 mA, IDQ3 = 300 mA, 1805 MHz ns 1. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. 2. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1977. (continued) MW4IC2020NBR1 MW4IC2020GNBR1 2 RF Device Data Freescale Semiconductor Table 5. Electrical Characteristics (TC = 25C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Typical CDMA Performances (In Modified CDMA Test Fixture, 50 ohm system) VDD = 26 Vdc, DQ1 = 80 mA, IDQ2 = 240 mA, IDQ3 = 250 mA, Pout = 1 W Avg., I1930 MHz VD2 + VD1 + C1 RF INPUT Z1 C7 VG1 VG2 VG3 R1 R2 C4 R3 C6 Z2 6 C10 7 NC 8 9 10 11 Quiescent Current Temperature Compensation C11 C12 C2 C5 1 2 3 NC 4 NC 5 DUT 16 NC 15 C8 Z9 + C3 VD3 14 Z3 C9 Z4 Z5 Z6 Z7 C13 C14 Z8 RF OUTPUT NC 13 12 Z1 Z2 Z3 Z4 Z5 1.820 x 0.087 Microstrip 0.245 x 0.087 Microstrip 0.345 x 0.236 Microstrip 0.327 x 0.087 Microstrip 0.271 x 0.087 Microstrip Z6 Z7 Z8 Z9 PCB 0.303 x 0.087 Microstrip 0.640 x 0.087 Microstrip 0.334 x 0.087 Microstrip 1.231 x 0.043 Microstrip Taconic TLX8 - 0300, 0.030, r = 2.55 Figure 3. MW4IC2020NBR1(GNBR1) Test Circuit Schematic Table 6. MW4IC2020NBR1(GNBR1) Test Circuit Component Designations and Values Part C1, C2, C3 C4 C5, C6, C8 C7 C9, C11 C10 C12 C13 C14 R1, R2, R3 Description 10 F, 35 V Tantalum Capacitors 220 nF Chip Capacitor (1206) 6.8 pF 100B Chip Capacitors 0.5 pF 100B Chip Capacitor 1.8 pF 100B Chip Capacitors 2.2 pF 100B Chip Capacitor 1 pF 100B Chip Capacitor 0.3 pF 100B Chip Capacitor 10 pF 100B Chip Capacitor 1.8 kW Chip Resistors (1206) Part Number TAJE226M035 12065C224K28 100B6R8CW 100B0R5BW 100B1R8BW 100B2R2BW 100B1R0BW 100B0R3BW 100B100GW Manufacturer AVX AVX ATC ATC ATC ATC ATC ATC ATC MW4IC2020NBR1 MW4IC2020GNBR1 4 RF Device Data Freescale Semiconductor C2 VD2 VD1 MW4IC2020 Rev 1 C3 C8 C5 VD3 C1 C6 C14 C7 C9 C10 C4 VG1 R1 R2 VG2 R3 VG3 GND C11 C12 C13 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 4. MW4IC2020NBR1(GNBR1) Test Circuit Component Layout MW4IC2020NBR1 MW4IC2020GNBR1 RF Device Data Freescale Semiconductor 5 TYPICAL CHARACTERISTICS D, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB) 30 28 26 24 22 20 18 16 1800 1850 1900 f, FREQUENCY (MHz) 1950 VDD = 26 Vdc, Pout = 20 W (PEP) IDQ1 = 80 mA, IDQ2 = 200 mA, IDQ3 = 300 mA 100 kHz Tone Spacing Gps -5 -10 IRL -15 -20 D IMD -25 -30 -35 -40 2000 Figure 5. Two - Tone Wideband Performance IMD, INTERMODULATION DISTORTION (dBc) IMD, INTERMODULATION DISTORTION (dBc) -10 -20 -30 5th Order -40 7th Order -50 -60 -70 -80 0.1 VDD = 26 Vdc IDQ1 = 80 mA, IDQ2 = 200 mA, IDQ3 = 300 mA f = 1840 MHz, 100 kHz Tone Spacing 3rd Order -10 -20 -30 5th Order -40 7th Order -50 -60 -70 -80 VDD = 26 Vdc IDQ1 = 80 mA, IDQ2 = 200 mA, IDQ3 = 300 mA f = 1960 MHz, 100 kHz Tone Spacing IMD, INTERMODULATION DISTORTION (dBc) IRL, INPUT RETURN LOSS (dB) 32 0 3rd Order 1 10 100 0.1 1 10 100 Pout, OUTPUT POWER (WATTS) PEP Pout, OUTPUT POWER (WATTS) PEP Figure 6. Intermodulation Distortion Products versus Output Power @ 1840 MHz Figure 7. Intermodulation Distortion Products versus Output Power @ 1960 MHz 35 Gps 33 G ps , POWER GAIN (dB) 31 29 D 27 25 85_C 23 0.1 25_C VDD = 26 Vdc IDQ1 = 80 mA, IDQ2 = 200 mA, IDQ3 = 300 mA f = 1960 MHz 36 30 D, DRAIN EFFICIENCY (%) G ps , POWER GAIN (dB) TC = -30_C 24 18 12 6 0 1 10 100 Pout, OUTPUT POWER (WATTS) CW 35 TC = -30_C 33 -30_C 31 25_C 29 27 25 23 0.1 85_C D 85_C 25_C Gps 18 15 12 9 6 VDD = 26 Vdc, IDQ1 = 80 mA 3 IDQ2 = 240 mA, IDQ3 = 250 mA f = 1960 MHz, 1-Carrier N-CDMA 0 1 10 Pout, OUTPUT POWER (WATTS) AVG. D, DRAIN EFFICIENCY (%) Figure 8. Power Gain and Drain Efficiency versus Output Power MW4IC2020NBR1 MW4IC2020GNBR1 6 Figure 9. Power Gain and Drain Efficiency versus Output Power RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS ACPR, ADJACENT CHANNEL POWER RATIO (dBc) ALT 1 & 2, ALTERNATE 1 & 2 CHANNEL POWER RATIO (dB -45 VDD = 26 Vdc, IDQ1 = 80 mA IDQ2 = 240 mA, IDQ3 = 250 mA -50 f = 1960 MHz, Single-Carrier N-CDMA -55 -60 -65 ALT2 -70 ALT1 -75 0.1 1 85_C 85_C TC = 25_C -30_C -30_C 25_C 34 32 G ps , POWER GAIN (dB) 30 28 26 24 TC = -30_C 25_C ACPR 85_C 85_C VDD = 26 Vdc Pout = 20 W (PEP) IDQ1 = 80 mA, IDQ2 = 200 mA, IDQ3 = 300 mA 1850 1900 f, FREQUENCY (MHz) 1950 2000 -30_C 25_C 10 22 1800 Pout, OUTPUT POWER (WATTS) AVG. Figure 10. Alternate Channel Power Ratio, Alternate 1 and 2 Channel Power Ratio versus Output Power 4 4 3.5 3 2.5 2 1.5 1 0.5 0 0.1 1 10 100 0.1 Figure 11. Power Gain versus Frequency EVM, ERROR VECTOR MAGNITUDE (% rms) VDD = 26 Vdc 3.5 IDQ1 = 80 mA, IDQ2 = 230 mA, IDQ3 = 230 mA EDGE Modulation, f = 1840 MHz 3 2.5 2 1.5 1 0.5 0 EVM, ERROR VECTOR MAGNITUDE (% rms) TC = 85_C 25_C -30_C VDD = 26 Vdc IDQ1 = 80 mA, IDQ2 = 230 mA, IDQ3 = 230 mA EDGE Modulation, f = 1960 MHz TC = 85_C 25_C -30_C 1 10 100 Pout, OUTPUT POWER (WATTS) AVG. Pout, OUTPUT POWER (WATTS) AVG. Figure 12. EVM versus Output Power @ 1840 MHz Figure 13. EVM versus Output Power @ 1960 MHz SPECTRAL REGROWTH @ 400 kHz AND 600 kHz (dBc) SPECTRAL REGROWTH @ 400 kHz AND 600 kHz (dBc) -50 TC = 25_C -55 -60 -65 SR 400 kHz -70 -75 SR 600 kHz -80 -85 0.1 1 10 100 Pout, OUTPUT POWER (WATTS) AVG. VDD = 26 Vdc IDQ1 = 80 mA, IDQ2 = 230 mA, IDQ3 = 230 mA EDGE Modulation, f = 1840 MHz 85_C -30_C -50 VDD = 26 Vdc -55 IDQ1 = 80 mA, IDQ2 = 230 mA, IDQ3 = 230 mA EDGE Modulation, f = 1960 MHz -60 -65 SR 400 kHz -70 -75 SR 600 kHz -80 -85 0.1 1 10 100 Pout, OUTPUT POWER (WATTS) AVG. 25_C TC = 25_C 85_C 85_C -30_C -30_C 85_C 25_C -30_C Figure 14. Spectral Regrowth at 400 and 600 kHz versus Output Power @ 1840 MHz Figure 15. Spectral Regrowth at 400 and 600 kHz versus Output Power @ 1960 MHz MW4IC2020NBR1 MW4IC2020GNBR1 RF Device Data Freescale Semiconductor 7 TYPICAL CHARACTERISTICS 1.E+09 MTTF FACTOR (HOURS X AMPS 2 ) 1.E+08 2nd Stage 1.E+07 1st Stage 3rd Stage 1.E+06 1.E+05 1.E+04 90 100 110 120 130 140 150 160 170 180 190 TJ, JUNCTION TEMPERATURE (C) This above graph displays calculated MTTF in hours x ampere2 drain current. Life tests at elevated temperatures have correlated to better than 10% of the theoretical prediction for metal failure. Divide MTTF factor by ID2 for MTTF in a particular application. Figure 16. MTTF Factor versus Junction Temperature MW4IC2020NBR1 MW4IC2020GNBR1 8 RF Device Data Freescale Semiconductor f = 1805 MHz f = 1990 MHz Zload f = 1805 MHz f = 1990 MHz Zin Zo = 50 VDD = 26 V, IDQ1 = 80 mA, IDQ2 = 200 mA, IDQ3 = 300 mA, Pout = 20 W PEP f MHz 1805 1842 1880 1930 1960 1990 Zin Zin 40.00 + j6.50 40.00 + j2.00 40.00 - j1.50 40.00 - j1.80 40.00 - j2.10 40.00 - j2.60 Zload 8.75 - j1.42 7.00 - j2.70 5.90 - j2.97 5.46 - j3.20 4.30 - j3.35 4.45 - j3.30 = Device input impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Device Under Test Output Matching Network Z in Z load Figure 17. Series Equivalent Input and Load Impedance MW4IC2020NBR1 MW4IC2020GNBR1 RF Device Data Freescale Semiconductor 9 PACKAGE DIMENSIONS MW4IC2020NBR1 MW4IC2020GNBR1 10 RF Device Data Freescale Semiconductor MW4IC2020NBR1 MW4IC2020GNBR1 RF Device Data Freescale Semiconductor 11 MW4IC2020NBR1 MW4IC2020GNBR1 12 RF Device Data Freescale Semiconductor MW4IC2020NBR1 MW4IC2020GNBR1 RF Device Data Freescale Semiconductor 13 MW4IC2020NBR1 MW4IC2020GNBR1 14 RF Device Data Freescale Semiconductor MW4IC2020NBR1 MW4IC2020GNBR1 RF Device Data Freescale Semiconductor 15 How to Reach Us: Home Page: www.freescale.com E - mail: support@freescale.com USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. Alma School Road Chandler, Arizona 85224 +1 - 800- 521- 6274 or +1 - 480- 768- 2130 support@freescale.com Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) support@freescale.com Japan: Freescale Semiconductor Japan Ltd. Headquarters ARCO Tower 15F 1 - 8 - 1, Shimo - Meguro, Meguro - ku, Tokyo 153 - 0064 Japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com Asia/Pacific: Freescale Semiconductor Hong Kong Ltd. Technical Information Center 2 Dai King Street Tai Po Industrial Estate Tai Po, N.T., Hong Kong +800 2666 8080 support.asia@freescale.com For Literature Requests Only: Freescale Semiconductor Literature Distribution Center P.O. Box 5405 Denver, Colorado 80217 1 - 800- 441- 2447 or 303 - 675- 2140 Fax: 303 - 675- 2150 LDCForFreescaleSemiconductor@hibbertgroup.com Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Freescale Semiconductor reserves the right to make changes without further notice to any products herein. Freescale Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters that may be provided in Freescale Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals", must be validated for each customer application by customer's technical experts. Freescale Semiconductor does not convey any license under its patent rights nor the rights of others. Freescale Semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer purchase or use Freescale Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. (c) Freescale Semiconductor, Inc. 2006. All rights reserved. RoHS- compliant and/or Pb - free versions of Freescale products have the functionality and electrical characteristics of their non - RoHS- compliant and/or non - Pb- free counterparts. For further information, see http://www.freescale.com or contact your Freescale sales representative. For information on Freescale's Environmental Products program, go to http://www.freescale.com/epp. MW4IC2020NBR1 MW4IC2020GNBR1 Rev. 16 9, 5/2006 Document Number: MW4IC2020N RF Device Data Freescale Semiconductor |
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