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VCE IC = = 1200 V 57 A IGBT-Die 5SMY 12H1200 Die size: 9.1 x 9.1 mm Doc. No. 5SYA1638-01 Sep 06 * Ultra low loss thin IGBT die * Highly rugged SPT+ design * Large bondable emitter area Maximum rated values Parameter Collector-emitter voltage DC collector current Peak collector current Gate-emitter voltage IGBT short circuit SOA Junction temperature 1) 1) Symbol Conditions VCES IC ICM VGES tpsc Tvj VCC = 900 V, VCEM 1200 V VGE 15 V, Tvj 125 C Limited by Tvjmax VGE = 0 V, Tvj 25 C min max 1200 57 114 Unit V A A V s C -20 20 10 -40 150 Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 - 9 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. 5SMY 12H1200 IGBT characteristic values Parameter Collector (-emitter) breakdown voltage Collector-emitter saturation voltage Collector cut-off current Gate leakage current Gate-emitter threshold voltage Gate charge Input capacitance Output capacitance Reverse transfer capacitance Internal gate resistance Turn-on delay time Rise time Turn-off delay time Fall time 2) Symbol Conditions V(BR)CES VCE sat ICES IGES VGE(TO) Qge Cies Coes Cres RGint td(on) tr td(off) tf VCC = 600 V, IC = 57 A, RG = 18 , VGE = 15 V, L = 60 nH, inductive load VCC = 600 V, IC = 57 A, RG = 18 , VGE = 15 V, L = 60 nH, inductive load VCC = 600 V, IC = 57 A, VGE = 15 V, RG = 18 , L = 60 nH, inductive load, FWD: 5SLX 12E1200 VCC = 600 V, IC = 57 A, VGE = 15 V, RG = 18 , L = 60 nH, inductive load Tvj = 25 C Tvj = 125 C Tvj = 25 C Tvj = 125 C Tvj = 25 C Tvj = 125 C Tvj = 25 C Tvj = 125 C Tvj = 25 C Tvj = 125 C Tvj = 25 C Tvj = 125 C VGE = 0 V, IC = 1 mA, Tvj = 25 C IC = 57 A, VGE = 15 V VCE = 1200 V, VGE = 0 V Tvj = 25 C Tvj = 125 C Tvj = 25 C Tvj = 125 C min 1200 typ max Unit V 1.8 2.0 100 200 -200 5 6.2 611 4.29 0.30 0.20 10 270 290 60 60 480 550 60 65 6.0 200 7 V V A A nA V nC nF ns ns ns ns VCE = 0 V, VGE = 20 V, Tvj = 125 C IC = 2 mA, VCE = VGE, Tvj = 25 C IC = 57 A, VCE = 600 V, VGE = -15 ..15 V VCE = 25 V, VGE = 0 V, f = 1 MHz, Tvj = 25 C Turn-on switching energy Eon mJ 8.4 3.7 mJ 5.8 270 A Turn-off switching energy Eoff Short circuit current 2) ISC tpsc 10 s, VGE = 15 V, Tvj = 125 C, VCC = 900 V, VCEM 1200 V Characteristic values according to IEC 60747 - 9 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1638-01 Sep 06 page 2 of 5 5SMY 12H1200 Mechanical properties Parameter Overall die L x W Dimensions exposed L x W (except gate pad) front metal gate pad thickness Metallization 3) 3) Unit 9.1 x 9.1 7.57 x 7.56 1.2 x 1.22 130 20 AlSi1 Al / Ti / Ni / Ag 4 1.2 mm mm mm m m m LxW front (E) back (C) For assembly instructions refer to : IGBT and Diode chips from ABB Switzerland Ltd, Semiconductors, Doc. No. 5SYA 2033. Outline drawing 1.31 1.200.05 G Emitter 7.57 7.93 9.09 0.05 Note: all dimensions are shown in mm This is an electrostatic sensitive device, please observe the international standard IEC 60747-1, Chap. IX. This product has been designed and qualified for Industrial Level. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1638-01 Sep 06 page 3 of 5 5SMY 12H1200 171 171 VCE = 20 V 142.5 142.5 114 25 C IC [A] 85.5 IC [A] 125 C 114 85.5 57 57 125 C 28.5 VGE = 15 V 0 0 1 2 VCE [V] 3 4 28.5 25 C 0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 VGE [V] Fig. 1 Typical on-state characteristics Fig. 2 Typical transfer characteristics 80 70 60 50 40 Eon 30 20 10 -3 2 16 VCC = 600 V RG = 18 ohm VGE = 15 V Tvj = 125 C L = 60 nH 14 12 10 Eon, Eoff [mJ] 8 6 4 Eoff 2 Esw [mJ] = 2.49 x 10 x I C + 0.01 x I C + 4.58 Eon, Eoff [mJ] 0 0 28.5 57 85.5 IC [A] 114 142.5 171 VCC = 600 V IC = 57 A VGE = 15 V Tvj = 125 C 0 10 20 30 RG [ohm] 40 50 60 0 Fig. 3 Typical switching characteristics vs collector current Fig. 4 Typical switching characteristics vs gate resistor ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1638-01 Sep 06 page 4 of 5 5SMY 12H1200 20 10 Cies VCC = 600 V VGE = 0 V fosc = 1 MHz Vosc = 50 mV 15 VCC = 900 V VGE [V] 10 C [nF] 1 Coes 5 Cres IC = 57 A Tvj = 25 C 0 0.0 0.1 0.2 0.3 Qg [C] 0.4 0.5 0.6 0.1 0 5 10 15 20 VCE [V] 25 30 35 Fig. 5 Typical gate charge characteristics Fig. 6 Typical capacitances vs collector-emitter voltage ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)58 586 1419 +41 (0)58 586 1306 abbsem@ch.abb.com www.abb.com/semiconductors Doc. No. 5SYA1638-01 Sep 06 |
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