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| AEGIS SEMICONDUTORES LTDA. A3L:25DT.XXI VOLTAGE RATINGS Part Number VRRM , VR (V) rep. peak reverse voltage TJ = 0 to 125 OC A3L:25TD.02I A3L:25TD.04I A3L:25TD.06I A3L:25TD.08I A3L:25TD.10I A3L:25TD.12I A3L:25TD.14I A3L:25TD.16I 200 400 600 800 1000 1200 1400 1600 Max. VRSM , VR (V) Max. nonrep. peak reverse voltage O TJ = -40 to 0 C 200 400 600 800 1000 1200 1330 1520 TJ = 25 to 125O C 300 500 700 900 1100 1300 1500 1700 MAXIMUM ALLOWABLE RATINGS PARAMETER TJ Junction Temperature Tstg Storage Temperature IF(AV) Max. Av. current @ Max. TC VALUE -40 to 125 -40 to 150 25 85 55 0.5 IFSM Max. Peak non-rep. surge current 0.54 kA 0.57 0.62 1.3 50 Hz half cycle sine wave 60 Hz half cycle sine wave t = 10ms O UNITS O O NOTES 180O half sine wave 50 Hz half cycle sine wave 60 Hz half cycle sine wave Initial TJ = 125 C, rated VRRM applied after surge. O C C C A O IF(RMS) Nom. RMS current A Initial TJ = 125 C, no voltage applied after surge. O 1.41 I t Max. I t capability 1.48 1.61 It 2 1/2 2 2 t = 8.3 ms kA s t = 10ms t = 8.3 ms O Initial TJ = 125 C, rated VRRM applied after surge. 2 O Initial TJ = 125 C, no voltage applied after surge. 2 Max. I t 2 1/2 capability 17.7 kA s 2 1/2 Initial TJ = 125 C, no voltage applied after surge. 2 1/2 1/2 tx . It di/dt Max. Non-repetitive rate-ofrise current PGM Max. Peak gate power PG(AV) Max. Av. gate power +IGM Max. Peak gate current -VGM Max. Peak negative gate voltage F Mounting Force 500 10 3 150 2 3(5) A/ms W W mA V N.m (0.1 < tx < 10ms). for time tx = I t * O TJ = 125 C, VD = VDRM , ITM = 1600A. Gate pulse: 20V, 20W, 10ms, 0.5ms rise time, Max. repetitive di/dt is aproximately 40% of non-repetitive value. tp < 5 ms tp < 5 ms Upper connectors(Heatsink) AEGIS SEMICONDUTORES LTDA. A3L:25DT.XXI CHARACTERISTICS PARAMETER VTM peak on-state voltage VT(TO) Threshold voltage rT Slope resistance IL Latching current IH Holding current td Delay time tq Turn-off time dv/dt Critical rate-of-rise of off-state voltage IRM, IDM Peak reverse and offstate current IGT DC gate current to trigger VGT DC gate voltage to trigger VGD DC gate voltage not to trigger RthJC Thermal resistance, junction-to-case RthCS Thermal resistance, case-to-sink wt Weight Case Style MIN. --------------80 ------50 4 2 ------------TYP. ----------0.7 125 140 --10 --80 --------------110(4) TO-240AA MAX. UNITS 2 0.95 12.6 400 200 1.5 200 500 250 15 300 150 --2.5 0.2 0.4 0.463 0.491 0.1 --mA mA V V V mW mA mA ms ms O TEST CONDITIONS Initial T J = 25 C, 50-60Hz half sine, Ipeak = 79A. O TJ = 125 C Av. power = V T(TO) * IT(AV) +rT * [IT(RMS)]2, 180 Half Sine. Use low values for ITM < p rated IT(AV) TC = 125 C, 12V anode. Gate pulse: 10V, 20 W, 100ms. TC = 25OC, 12V anode. Initial IT = 15A. TC = 25 C, VD = VDRM, 50A resistive load. Gate pulse: 10V, 20W, 10ms, 1ms rise time. O TJ = 125 C, ITM = 500A, di/dt = 25A/ms, VR = 50V. dv/dt = 20 V/ms lin. to rated V DRM. Gate: 0V, 100 W. TJ = 125 C. Exp. to 100% or lin. Higher dv/dt values avaliable. To 80% V DRM, gate open. TJ = 125OC, Exp. To 67% V DRM, gate open. TJ = 125 OC, Rated VRRM and VDRM, gate open. TC = -40 C TC = 25OC C TC = -40 O O O O O O V/ms +12V anode-to-cathode. For recommended gate drive see "Gate Characteristics" figure. TC = 25 C TC = 25OC, Max. Value which will not trigger with rated VDRM V anode. O C/W DC operation, single side cooled. O C/W 180 sine wave, single side cooled. O C/W 120 rectangular wave, single side cooled. C/W Mtg. Surface smooth, flat and greased. Single side cooled. ----- O g(oz.) JEDEC Maximum Allowable Case Temperature Maximum Allowable Case Temperature (C) Maximum Allowable Case Temperature (C) 120 120 Maximum Allowable Case Temperature 110 110 100 100 90 30 90 30 80 60 90 80 60 70 120 180 70 90 120 180 DC 60 0 *Sinusoidal Waveform 60 *Rectangular Waveform 10 20 30 40 0 10 20 30 40 50 Average Forward Current (A) Average Forward Current (A) Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics AEGIS SEMICONDUTORES LTDA. A3L:25DT.XXI Maximum Average Forward Power Loss 700 Maximum Average Forward Power Loss Maximum Average Forward Power Loss (W) 30 Maximum Average Forward Power Loss (W) 500 30 600 500 400 60 400 300 60 300 90 200 90 120 180 200 100 0 0 *Sinusoidal Waveform 120 180 100 DC 0 *Rectangular Waveform 10 20 30 40 50 60 0 10 20 30 40 50 60 Average Forward Current (A) Average Forward Current (A) Fig.3 -Forward Power Loss Characteristics Fig. 4 - Forward Power Loss Characteristics 1000 Forward Voltage Drop 1 Transient Thermal Impedance ZthJC Instantaneous Forward Current (A) 100 Transient Thermal Impedance ZthJC 2 3 4 5 0.1 10 125C 25C 1 0 1 0.01 0.01 0.1 1 10 Instantaneous Forward Voltage (V) Time (s) Fig. 5 - Forward Voltage Drop Characteristics Fig. 6 - Transient Thermal Impedance AEGIS SEMICONDUTORES LTDA. A3L:25DT.XXI Fig. 7 - Gate Trigger Characteristics TO-240AA 1 ~ G1 K1 + K2 2 G2 - 3 1 2 3 Fig. 8 - Outline Characteristics 45 67 Fig. 9 - Circuit Layout |
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