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CHA6664-QDG
RoHS COMPLIANT
12-16GHz 1W High Power Amplifier
GaAs Monolithic Microwave IC in SMD leadless package Description
The CHA6664-QDG is a three-stages Ku-band high power amplifier. The circuit is manufactured with a standard Power P-HEMT process: 0.25m gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in RoHS compliant SMD package.
Main Features
35
dB(S21), dB(S11), dB(S22) versus frequency (GHz)
S21, S11, S22 (dB)
0.25 m Power pHEMT Technology 12-16 GHz Frequency Range 31.5 dBm Saturated Output Power High gain: 28dB Quiescent Bias Point: 8V, 600mA 24L-QFN4x4 SMD package
30 25 20 15 10 5 0 -5 -10 -15 -20 -25 -30 -35 -40 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 Frequency (GHz)
dB(S21) dB(S11) dB(S22)
Typical on board measurements
Main Characteristics
Tamb = +25 Vd1=Vd2=Vd3=+8V, Id (Quiescent)=600mA , CW biasing mode C, Symbol F_op P_Sat G_lin Parameter Operating Frequency Range Saturated output power Linear Gain Min 12 31.5 28 Typ Max 16 Unit GHz dBm dB
ESD Protections: Electrostatic discharge sensitive device observe handling precautions!
Ref. : DSCHA6664QDG6332 - 28 Nov 06
1/10
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Departementale 128 - BP46 - 91401 Orsay Cedex France Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
CHA6664-QDG
Electrical Characteristics
12-16GHz High Power Amplifier
Tamb = +25 Vd1=Vd2=Vd3=+8V, Id (Quiescent)=600mA , CW biasing mode C, These values are representative of onboard measurements as defined on the drawing 96372
Symbol Fop G_lin G G_lin_T IS11I IS22I P1dB P_Sat PAE_Sat Id Id_1dBc Id_sat Vd 1,2,3 Vg 1,2,3
Parameter Operating frequency range Linear Gain Gain flatness (12 - 16GHz) Linear gain variation versus temperature Input return loss ( 12 - 16GHz) Output return loss Output power at 1dB gain compression Saturated Output power Power Added Effciency in saturation Power supply quiescent current (1) Power supply @1dB gain compression Power supply in saturation Positive drain bias voltage Negative gate bias voltage
Min 12
Typ 28 2 0.06 2.0:1 2.0:1 30 31.5 25 600 750 800 8 -0.8
Max 16
Unit GHz dB dB dB/ C
dBm dBm % mA mA mA V V
(1) This parameter is fixed by gate voltage Vg (2) The reference is the backside of the package
Absolute Maximum Ratings (1)
Tamb = +25 C Symbol Vd Pin
Tj
Parameter Drain bias voltage RF input power Junction temperature (2) Operating temperature range Storage temperature range
Values 9 14
175
Unit V dBm
C
Top Tstg
-40 to +85 -55 to +125
C C
(1) Operation of this device above anyone of these paramaters may cause permanent damage. (2) Equivalent thermal resistance channel to ground paddle =15.7 C/W for Tground paddle. = +85 C with 8V, 600mA
Ref.: DSCHA6664QDG6332 - 28 Nov 06
2/10
/Specifications subject to change without notice
Route Departementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
12-16GHz High Power Amplifier
Typical Measured Performance
CHA6664-QDG
Tamb = +25 Vd1=Vd2=Vd3=+8V, Id (Quiescent)=600mA , CW biasing mode C,
Measurements in the board access planes (without any correction), using the proposed land pattern & board 96372.
Gain and Input/Output Return Losses (dB)
35 30 25 20 15 S21, S11, S22 (dB) 10 5 0 -5 -10 -15 -20 -25 -30 -35 -40 11 12 13 14 Frequency (GHz) 15 16 17
dB(S21) dB(S11) dB(S22)
Gain (dB) versus Frequency @Pin=[-20; +5; +10dBm]
30 29 28 27 Gain (dB) 26 25 24 23 22 21 20 12 13 14 Frequency (GHz)
3/10
Gain (dB) @Pin=-20dBm Gain(dB) @Pin=+5dBm Gain(dB) @Pin=+10dBm
15
16
Ref.: DSCHA6664QDG6332 - 28 Nov 06
Specifications subject to change without notice
Route Departementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
CHA6664-QDG
12-16GHz High Power Amplifier
Output power (dBm) versus Frequency @Pin=[+1; +5; +10dBm]
33 32 31 Pout (dBm) 30 29 28
Pout (dBm) @Pin=+1 dBm
27 26 25 12 13 14 Frequency (GHz)
Pout (dBm) @Pin=+5dBm Pout(dBm) @Pin=+10dBm
15
16
Power Added Efficiency (%) versus Frequency @Pin=[+1; +5; +10dBm]
32 30 28 26 24 PAE (%) 22 20 18 16 14 12 10 8 12 13 14 Frequency (GHz) 15 16
PAE (%) @Pin=+1 dBm PAE (%) @Pin=+5dBm PAE (%) @Pin=+10dBm
Ref.: DSCHA6664QDG6332 - 28 Nov 06
4/10
/Specifications subject to change without notice
Route Departementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
12-16GHz High Power Amplifier
CHA6664-QDG
Output power (dBm) versus Frequency @Pin=+10dBm Temp=[-40 / +25 / +85 deg]
33
32
Pout (dBm)
31
30
Pout(dBm) Temp=-40deg
29
Pout(dBm) @Temp=+25deg Pout(dBm) @Temp=+85deg
28 12 13 14 Frequency (GHz) 15 16
Ref.: DSCHA6664QDG6332 - 28 Nov 06
5/10
Specifications subject to change without notice
Route Departementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
CHA6664-QDG
Package outline:
12-16GHz High Power Amplifier
A6664
Matt tin, Lead Free Units From the standard Pin 25 (paddle) GND
(Green) mm JEDEC MO-220
123456789101112-
Nc Gnd Gnd
131415-
Gnd Gnd RF IN Gnd Gnd Nc Nc Vg1 Vg2 Vg3 Nc Nc
RF OUT 16Gnd Gnd Vd3 Vd2 Nc Vd1 Nc Nc 1718192021222324-
Ref.: DSCHA6664QDG6332 - 28 Nov 06
6/10
/Specifications subject to change without notice
Route Departementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
12-16GHz High Power Amplifier
Application note
CHA6664-QDG
The design of the motherboard has a strong impact on the over all performance since the transition from the motherboard to the package is comparably large. In case of the SMD type packages of United Monolithic Semiconductors the motherboard should be designed according to the information given in the following to achieve good performance. Other configurations are also possible but can lead to different results. If you need advise please contact United Monolithic Semiconductors for further information.
SMD type packages of UMS should allow design and fabrication of micro- and mm-wave modules at low cost. Therefore, a suitable motherboard environment has been chosen. All tests and verifications have been performed on Rogers RO4003. This material exhibits a permittivity of 3.38 and has been used with a thickness of 200m [8 mils] and a 1/2oz or less copper cladding. The corresponding 50Ohm transmission line has a strip width of about 460m [approx. 18 mils].
The contact areas on the motherboard for the package connections should be designed according to the footprint given above. The proper via structure under the ground pad is very important in order to achieve a good RF and lifetime performance. All tests have been done by using a grid of plenty plated through vias with a diameter of less than 300m [12 mils] and a spacing of less than 700m [28 mils] from the centres of two adjacent vias. The via grid should cover the whole space under the ground pad and the vias closest to the RF ports should be located near the edge of the pad to allow a good RF ground connection. Since the vias are important for heat transfer, a proper via filling should be guaranteed during the mounting procedure to get a low thermal resistance between package and heat sink. For power devices the use of heat slugs in the motherboard instead of a grid of via's is recommended.
For the mounting process the SMD type package can be handled as a standard surface mount component. The use of either solder or conductive epoxy is possible. The solder thickness after reflow should be typical 50m [2 mils] and the lateral alignment between the package and the motherboard should be within 50m [2 mils]. Caution should be taken to obtain a good and reliable contact over the whole pad areas. Voids or other improper connections, in particular, between the ground pads of motherboard and package will lead to a deterioration of the RF performance and the heat dissipation. The latter effect can reduce drastically reliability and lifetime of the product.
Ref.: DSCHA6664QDG6332 - 28 Nov 06
7/10
Specifications subject to change without notice
Route Departementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
CHA6664-QDG
12-16GHz High Power Amplifier
Unit : mm
(For production, design must be adapted with regard to PCB tolerances and assembly process) Basic footprint for a 24L-QFN4x4 (Please, refer to the UMS proposed footprint for optimum operation in the following "Proposed Assembly board" section)
The RF ports are DC blocked on chip. The DC connection (Vd) does not include any decoupling capacitor in package, therefore it is mandatory to provide a good external DC decoupling on the PC board, as close as possible to the package.
SMD mounting procedure
The SMD leadless package has been designed for high volume surface mount PCB assembly process. The dimensions and footprint required for the PCB (motherboard) are given in the drawings above. For the mounting process standard techniques involving solder paste and a suitable reflow process can be used. For further details, see application note AN0017.
Ref.: DSCHA6664QDG6332 - 28 Nov 06
8/10
/Specifications subject to change without notice
Route Departementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
12-16GHz High Power Amplifier
CHA6664-QDG
Proposed Assembly board "96372" for the 24L-QFN4x4 products characterization.
Compatible with the proposed footprint. Based on typically Ro4003 / 8mils or equivalent. Using a microstrip to coplanar transition to access the package. Recommended for the implementation of this product on a module board.
-
Ref.: DSCHA6664QDG6332 - 28 Nov 06
9/10
Specifications subject to change without notice
Route Departementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
CHA6664-QDG
12-16GHz High Power Amplifier
Ordering Information
QFN 4x4 RoHS compliant package:
Stick: XY = 20 CHA6664-QDG/XY Tape & reel: XY = 21
Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S.
Ref.: DSCHA6664QDG6332 - 28 Nov 06 10/10 /Specifications subject to change without notice
Route Departementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09

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