View CHA3514_4243006.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

CHA3514
RoHS COMPLIANT
6-18GHz 4 bit Digital Variable Amplifier
GaAs Monolithic Microwave IC
Description
The CHA3514 is composed by a two stage travelling wave amplifier followed by a four steps digital attenuator. It is designed for defense applications. The backside of the chip is both RF and DC grounded. This helps to simplify the assembly process. The circuit is manufactured with a PM-HEMT process, 0.25m gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form.
A B 10A 5A 2.5A 20A
RF IN
10dB
5dB
2.5dB
20dB
D
E
10B
5B
2.5B
20B
Typical on wafer Measurements Gain versus attenuation states
Main Features
Performances: 6-18GHz 19dBm saturated output power 13 dB gain 4bit attenuator for 39.5dB dynamic range DC power consumption, 190mA @ 4.5V Chip size: 5.54 x 2.30 x 0.1 mm
Main Characteristics
Tamb. = 25 C Symbol
Fop G Psat ATT dyn
Parameter
Operating frequency range Small signal gain @ Attenuator state 0dB Saturated Output power @ Attenuator state 0dB Attenuator range with 4bit
Min
6
Typ
13 19 39.5
Max
18
Unit
GHz dB dBm dB
ESD Protection: Electrostatic discharge sensitive device. Observe handling precautions!
Ref. : DSCHA35146278 - 05 Oct 06 1/10 Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Departementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHA3514
6-18GHz Digital Variable Amplifier
Electrical Characteristics on wafer
Tamb = +25 C Vd= Pads B, D= 4.5V, Vg= Pads A, E tuned for Id= 190mA Symbol
Fop G ATT bit
Parameter
Operating frequency range (1) Small signal gain @ Attenuator state 0dB (1) Attenuator bit: State 2.5dB State 5dB State 10 dB State 20dB
Min
6
Typ
Max
18
Unit
GHz dB dB dB dB dB dB dBm
13 2.6 5 10 22 39.5 18
ATT dyn P1dB
Attenuator dynamic range with 4bit Output power at 1dB compression @ Attenuator state 0dB (1) Saturated Output power @ Attenuator state 0dB (1) Noise figure @ Attenuator state 0dB Input VSWR all attenuator states
Psat
19
dBm
NF VSWRin
7 2.4:1 2.0:1 4.5 190 -5 250 0
dB
VSWRout Output VSWR all attenuator states Vd Id Vc Drain bias DC voltage (Pads B,D) Bias current @ small signal Control voltage for Attenuator bits
V mA V
(1) These values are representative for on-wafer measurements that are made without bonding wires at the RF ports.
Ref. : DSCHA35146278 - 05 Oct 06
2/10
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
6-18GHz Digital Variable Amplifier
CHA3514
Absolute Maximum Ratings
Tamb. = 25 (1) C Symbol
Vd Id Vg Vc Pin Tch Ta Tstg
Parameter
Maximum Drain bias voltage ( Pads B,D) Drain bias current with Vd=4.5V Gate bias voltage (Pads A, E) Attenuator bits control voltage Maximum input power overdrive (2) Maximum channel temperature Operating temperature range Storage temperature range
Values
+5 320 -2 to +0.4 -7 to +0.6 +20.0 +175 -40 to +70 -55 to +125
Unit
V mA V V dBm C C C
(1) Operation of this device above anyone of these parameters may cause permanent damage. (2) Duration < 1s.
4bit VGA Control interface
The attenuator states are controlled by 8 voltages.
Theoretical attenuation dB 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 0 reference 2.5 5 7.5 10 12.5 15 17.5 20 22.5 25 27.5 30 32.5 35 37.5 Voltage CONTROL PAD
10A (V) 10B (V) 5A (V) 5B (V) 2.5A (V) 2.5B (V) 20A (V) 20B (V)
state
-5 -5 -5 -5 0 0 0 0 -5 -5 -5 -5 0 0 0 0
0 0 0 0 -5 -5 -5 -5 0 0 0 0 -5 -5 -5 -5
-5 -5 0 0 -5 -5 0 0 -5 -5 0 0 -5 -5 0 0
0 0 -5 -5 0 0 -5 -5 0 0 -5 -5 0 0 -5 -5
-5 0 -5 0 -5 0 -5 0 -5 0 -5 0 -5 0 -5 0
0 -5 0 -5 0 -5 0 -5 0 -5 0 -5 0 -5 0 -5
-5 -5 -5 -5 -5 -5 -5 -5 0 0 0 0 0 0 0 0
0 0 0 0 0 0 0 0 -5 -5 -5 -5 -5 -5 -5 -5
Ref. : DSCHA35146278 - 05 Oct 06
3/10
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHA3514
6-18GHz Digital Variable Amplifier
Typical chip on wafer Sij parameters for reference state
Tamb 25 B=D=4.5V, Id=190mA, 10A, 5A, 2.5A, 20A = -5V, 10B, 5B, 2.5B, 20B =0V C,
Freq (GHz) 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0 12.5 13.0 13.5 14.0 14.5 15.0 15.5 16.0 16.5 17.0 17.5 18.0 18.5 19.0 19.5 20.0 20.5 21.0 21.5 22.0 22.5 23.0 23.5 24.0 dB(S11) -0.8 -1.5 -2.1 -2.8 -4.1 -5.1 -6.3 -7.8 -9.3 -10.7 -12.2 -13.8 -15.0 -15.6 -16.2 -16.6 -16.1 -15.3 -14.6 -14.0 -13.0 -12.2 -11.8 -11.5 -11.2 -11.6 -12.5 -13.1 -13.2 -14.1 -15.7 -18.0 -19.7 -16.8 -12.7 -9.9 -7.1 -5.3 -4.1 -3.3 -2.8 -2.6 -2.4 -2.2 -2.2 -2.1 -2.1 P(S11) ( ) -42.4 -62.3 -81.0 -99.6 -116.9 -133.6 -148.7 -162.3 -175.1 174.7 167.3 161.4 157.0 155.3 156.1 154.3 151.1 148.6 145.0 136.7 127.2 119.0 108.7 96.1 83.5 73.4 64.6 57.6 52.4 44.8 40.2 39.2 66.0 97.0 96.4 89.2 80.6 68.5 54.4 41.5 30.8 21.1 11.6 3.5 -3.3 -10.1 -16.9 dB(S21) -44.8 -24.1 -6.6 2.5 8.3 11.0 12.4 13.3 13.9 14.3 14.6 14.9 15.1 15.2 15.3 15.4 15.5 15.5 15.5 15.5 15.5 15.5 15.5 15.4 15.3 15.2 15.3 15.4 15.5 15.5 15.4 15.3 14.9 14.5 13.8 12.7 10.3 6.6 2.6 -0.8 -3.6 -5.8 -7.7 -9.3 -10.6 -11.9 -13.2 P(S21) ( ) -114.9 -166.4 156.9 94.4 37.6 -17.7 -65.1 -107.0 -145.1 178.9 144.5 111.4 79.3 47.9 16.9 -13.7 -44.0 -73.9 -103.8 -133.5 -163.1 167.2 137.5 107.7 77.9 49.1 20.1 -10.6 -42.1 -74.7 -108.3 -143.1 -178.3 144.9 105.1 64.1 19.1 -19.0 -47.9 -70.2 -89.1 -107.0 -125.3 -143.8 -162.9 176.9 156.5 dB(S12) -69.9 -69.2 -67.0 -61.4 -69.4 -86.1 -78.4 -72.8 -70.0 -68.7 -66.8 -64.9 -67.2 -62.7 -59.7 -57.5 -55.6 -54.7 -53.2 -54.7 -56.0 -56.4 -59.8 -76.5 -65.0 -60.2 -59.5 -55.2 -49.9 -45.5 -43.7 -42.0 -41.7 -41.5 -41.0 -42.1 -45.0 -50.6 -54.4 -53.6 -54.2 -54.2 -55.5 -58.9 -62.1 -65.9 -62.2 P(S12) ( ) -91.3 -148.8 -165.4 -179.5 74.2 97.0 133.3 112.9 77.8 34.4 -5.4 -37.6 -61.6 -85.6 -109.9 -138.0 -167.3 171.2 136.4 117.6 96.6 74.2 43.6 22.9 178.8 148.9 146.9 142.1 141.5 117.2 87.3 61.2 36.3 14.5 -13.7 -42.4 -76.5 -91.9 -69.2 -67.9 -66.0 -73.1 -89.7 -95.4 -90.4 -60.7 -32.7 dB(S22) -3.3 -4.6 -7.2 -10.5 -14.8 -17.4 -16.9 -15.5 -14.4 -13.5 -12.9 -12.4 -12.1 -12.0 -12.2 -12.7 -13.6 -15.1 -17.3 -20.4 -23.7 -24.5 -22.9 -21.9 -20.1 -17.4 -15.1 -13.5 -12.6 -12.6 -13.9 -16.6 -21.3 -22.3 -17.6 -15.1 -15.6 -20.1 -29.1 -19.5 -14.7 -12.0 -10.4 -9.4 -8.8 -8.6 -8.6 P(S22) ( ) -59.4 -89.6 -122.7 -160.5 147.5 88.8 43.1 15.9 -2.5 -17.5 -30.6 -42.3 -54.0 -66.0 -78.5 -90.1 -102.2 -113.3 -123.0 -125.3 -113.1 -88.9 -73.3 -66.9 -59.5 -59.3 -68.1 -81.7 -99.9 -121.4 -146.5 -177.9 136.0 46.6 -12.9 -51.6 -84.5 -107.2 -59.0 -18.0 -29.5 -43.1 -56.0 -69.1 -81.5 -92.4 -102.8
Ref. : DSCHA35146278 - 05 Oct 06
4/10
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
6-18GHz Digital Variable Amplifier
Typical on wafer Measurements @ 25 C
Bias conditions: Vd=4.5V, Vg tuned for Id = 190mA Linear Gain versus attenuator states
CHA3514
Attenuator accuracy vs frequency for main states Bit 2.5dB Bit 5dB
Bit 10dB
Bit 20dB
Ref. : DSCHA35146278 - 05 Oct 06
5/10
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHA3514
6-18GHz Digital Variable Amplifier
Saturated output power @ nominal state
dB(S11) versus frequency for all states
Ref. : DSCHA35146278 - 05 Oct 06
6/10
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
6-18GHz Digital Variable Amplifier
dB(S22) versus frequency for all states
CHA3514
Noise Figure vs frequency @ nominal state
Ref. : DSCHA35146278 - 05 Oct 06
7/10
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHA3514
6-18GHz Digital Variable Amplifier
Typical test fixture Measurements
Bias conditions: Vd=4.5V, Vg tuned for Id = 190mA Linear Gain versus attenuation states & temperature
18 14 10 6 2 -2
Gain (dB)
-6 -10 -14 -18 -22 -26 -30 -34 0 2 4 6 8 10 12 14 16 18 20 22 24 26 Frequency GHz
-40C
25C
+70C
Ref. : DSCHA35146278 - 05 Oct 06
8/10
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
6-18GHz Digital Variable Amplifier
Chip Assembly and Mechanical Data
CHA3514
A
B
120pF
10A
5A
2.5A
20A
D
120pF
E
10B
5B
2.5B
20B
10nF 100nF To Vd DC Drain Supply
Note : Supply feed should be capacitively bypassed. 25m diameter gold wire is to be prefered.
Recommended circuit bonding table
Label
10A, 10B 5A, 5B 2.5A, 2.5B 20A, 20B B D A E
Type
Vc Vc Vc Vc Vd Vd Vg Vg
Decoupling
Not required Not required Not required Not required 120pF / 10nF 120pF / 10nF Not required Not required
Comment
10dB pad control 5dB pad control 2.5dB pad control 20dB pad control Drain Supply Drain Supply Gate Supply Gate Supply
Ref. : DSCHA35146278 - 05 Oct 06
9/10
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHA3514
Bonding pad positions
6-18GHz Digital Variable Amplifier
( Chip thickness : 100m)
Ordering Information
Chip form : CHA3514-99F/00
Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S.
Ref. : DSCHA35146278 - 05 Oct 06
10/10
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

▲Up To Search▲

Price & Availability of CHA3514

	To Download CHA3514 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .