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| To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices and power devices. Renesas Technology Corp. Customer Support Dept. April 1, 2003 MITSUBISHI POWER MOSFET IMIN PREL . ge. ation ecific ct to chan je nal sp ot a fiits are sub is is nic lim e: Th tr Notice parame Som ARY FL20KM-5A HIGH-SPEED SWITCHING USE Nch POWER MOSFET FL20KM-5A OUTLINE DRAWING 10 0.3 Dimensions in mm 2.8 0.2 15 0.3 3.2 0.2 14 0.5 3.6 0.3 1.1 0.2 1.1 0.2 0.75 0.15 6.5 0.3 3 0.3 0.75 0.15 2.54 0.25 2.54 0.25 q q q q q 2.6 0.2 10V DRIVE VDSS ................................................................................ 250V rDS (ON) (MAX) .............................................................. 0.19 ID ......................................................................................... 20A Viso ................................................................................ 2000V GATE DRAIN SOURCE TO-220FN APPLICATION Inverter type fluorescent light sets, SMPS MAXIMUM RATINGS (Tc = 25C) Symbol VDSS VGSS ID IDM IDA PD Tch Tstg Viso -- Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Isolation voltage Weight AC for 1minute, Terminal to case Typical value L = 200H VGS = 0V VDS = 0V Conditions Ratings 250 30 20 60 20 35 -55 ~ +150 -55 ~ +150 2000 2.0 Unit V V A A A W C C V g Aug. 1999 4.5 0.2 MITSUBISHI POWER MOSFET on. ange. ificati h l spec bject to c a fina su is not limits are : Thismetric e Notice para Som P MIN RELI ARY FL20KM-5A HIGH-SPEED SWITCHING USE Nch POWER MOSFET ELECTRICAL CHARACTERISTICS (Tch = 25C) Symbol V (BR) DSS V (BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) Trr Parameter Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Test conditions ID = 1mA, VGS = 0V IGS = 100A, VDS = 0V VGS = 30V, VDS = 0V VDS = 250V, VGS = 0V ID = 1mA, VDS = 10V Limits Min. 250 30 -- -- 2.0 -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. -- -- -- -- 3.0 0.15 1.50 12 1300 250 40 25 50 200 80 1.5 -- 300 Max. -- -- 10 1.0 4.0 0.19 1.90 -- -- -- -- -- -- -- -- 2.0 3.57 -- Unit V V A mA V V S pF pF pF ns ns ns ns V C/W ns Drain-source on-state resistance ID = 10A, VGS = 10V Drain-source on-state voltage ID = 10A, VGS = 10V Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time ID = 10A, VDS = 10V VDS = 25V, VGS = 0V, f = 1MHz VDD = 150V, ID = 10A, VGS = 10V, RGEN = RGS = 50 IS = 10A, VGS = 0V Channel to case IS = 20A, VGS = 0V, dis/dt = -100A/s PERFORMANCE CURVES POWER DISSIPATION DERATING CURVE 50 POWER DISSIPATION PD (W) MAXIMUM SAFE OPERATING AREA 7 5 3 2 tw = 10s 100s 1ms 10ms 100ms DRAIN CURRENT ID (A) 40 101 30 7 5 3 2 7 5 3 2 7 5 3 2 Tc = 25C Single Pulse 100 20 10 10-1 DC 0 0 50 100 150 200 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 2 CASE TEMPERATURE TC (C) DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) 50 PD = 35W VGS = 20V OUTPUT CHARACTERISTICS (TYPICAL) 20 VGS = 20V 7V Tc = 25C Pulse Test 10V 6V 5V DRAIN CURRENT ID (A) 10V Tc = 25C Pulse Test 6V DRAIN CURRENT ID (A) 40 16 30 12 20 8 PD = 35W 10 5V 4 4V 0 0 4 8 12 16 20 0 0 2 4 6 8 10 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-SOURCE VOLTAGE VDS (V) Aug. 1999 MITSUBISHI POWER MOSFET on. ange. ificati h l spec bject to c a fina su is not limits are : Thismetric e Notice para Som P MIN RELI ARY FL20KM-5A HIGH-SPEED SWITCHING USE Nch POWER MOSFET ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 0.40 DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) () Tc = 25C Pulse Test ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 20 DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) Tc = 25C Pulse Test 16 0.32 VGS = 10V 12 ID = 40A 0.24 20V 8 0.16 4 20A 10A 0.08 0 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 DRAIN CURRENT ID (A) 0 0 4 8 12 16 20 GATE-SOURCE VOLTAGE VGS (V) TRANSFER CHARACTERISTICS (TYPICAL) 50 102 7 5 FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) DRAIN CURRENT ID (A) FORWARD TRANSFER ADMITTANCE yfs (S) 40 Tc = 25C 75C 125C 3 2 30 101 7 5 3 2 VDS = 10V Pulse Test 20 10 0 Tc = 25C VDS = 10V Pulse Test 0 4 8 12 16 20 100 0 10 2 3 5 7 101 2 3 5 7 102 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 3 2 5 4 3 Ciss SWITCHING CHARACTERISTICS (TYPICAL) 103 CAPACITANCE Ciss, Coss, Crss (pF) 7 5 3 2 td(off) SWITCHING TIME (ns) 2 102 7 5 4 3 2 tf tr 102 7 5 3 2 Coss 101 7 5 3 Tch = 25C f = 1MHZ VGS = 0V 23 5 7 100 2 3 5 7 101 2 3 Crss 101 7 5 7 102 2 5 5 7 100 2 3 td(on) Tch = 25C VDD = 150V VGS = 10V RGEN = RGS = 50 5 7 101 2 3 5 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN CURRENT ID (A) Aug. 1999 MITSUBISHI POWER MOSFET on. ange. ificati h l spec bject to c a fina su is not limits are : Thismetric e Notice para Som P MIN RELI ARY FL20KM-5A HIGH-SPEED SWITCHING USE Nch POWER MOSFET SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) 50 SOURCE CURRENT IS (A) TC = 25C 75C GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) 20 GATE-SOURCE VOLTAGE VGS (V) Tch = 25C ID = 20A VDS = 50V 16 40 12 100V 200V 30 125C 8 20 VGS = 0V Pulse Test 4 10 0 0 20 40 60 80 100 0 0 0.8 1.6 2.4 3.2 4.0 GATE CHARGE Qg (nC) SOURCE-DRAIN VOLTAGE VSD (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (tC) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25C) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) 101 GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) 7 5 4 3 2 VGS = 10V ID = 10A Pulse Test THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 5.0 VDS = 10V ID = 1mA 4.0 3.0 100 7 5 4 3 2 2.0 1.0 10-1 -50 0 50 100 150 0 -50 0 50 100 150 CHANNEL TEMPERATURE Tch (C) CHANNEL TEMPERATURE Tch (C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (tC) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25C) TRANSIENT THERMAL IMPEDANCE Zth (ch-c) (C/W) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101 7 5 3 2 Duty = 1.0 0.5 0.2 0.1 0.05 0.02 0.01 Single Pulse PDM tw T D= tw T 1.2 100 7 5 3 2 1.0 0.8 10-1 7 5 3 2 0.6 VGS = 0V ID = 1mA 0.4 -50 0 50 100 150 10-2 -4 10 2 3 5 710-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 PULSE WIDTH tw (s) Aug. 1999 CHANNEL TEMPERATURE Tch (C) |
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