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HAT3010R
Silicon N / P Channel Power MOS FET High Speed Power Switching
REJ03G1199-1000 (Previous: ADE-208-1402H) Rev.10.00 Sep 07, 2005
Features
* Low on-resistance * Capable of 4.5 V gate drive * High density mounting
Outline
RENESAS Package code: PRSP0008DD-D (Package name: SOP-8 )
78 DD 56 DD
65 87 12 34
2 G
4 G
1, 3 2, 4 5, 6, 7, 8
Source Gate Drain
S1 Nch
S3 Pch
Rev.10.00 Sep 07, 2005 page 1 of 9
HAT3010R
Absolute Maximum Ratings
(Ta = 25C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel dissipation Channel temperature Symbol VDSS VGSS ID Note 1 ID (pulse) IDR Note 2 Pch Pch Tch
Note 3
Value Nch 60 20 6 48 6 2 3 150 Pch -60 20 -5 -40 -5 2 3 150
Unit V V A A A W W C C
Storage temperature Tstg -55 to +150 -55 to +150 Notes: 1. PW 10 s, duty cycle 1% 2. 1 Drive operation: When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10 s 3. 2 Drive operation: When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10 s
Electrical Characteristics
N Channel (Ta = 25C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Note: 4. Pulse test Symbol V (BR) DSS V (BR) GSS IGSS IDSS VGS (off) RDS (on) RDS (on) |yfs| Ciss Coss Crss td (on) tr td (off) tf VDF trr Min 60 20 -- -- 1.0 -- -- 7 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 25 32 11 1050 150 90 15 15 55 10 0.85 50 Max -- -- 10 1 2.5 32 45 -- -- -- -- -- -- -- -- 1.10 -- Unit V V A A V m m S pF pF pF ns ns ns ns V ns Test Conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = 60 V, VGS = 0 VDS = 10 V, ID = 1 mA Note 4 ID = 3 A, VGS = 10 V ID = 3 A, VGS = 4.5 V Note 4 ID = 3 A, VDS = 10 V VDS = 10 V VGS = 0 f = 1 MHz VGS = 10 V, ID = 3 A VDD 30 V RL = 10 Rg = 4.7 IF = 6 A, VGS = 0 IF = 6 A, VGS = 0 diF/dt = 100 A/s
Note 4 Note 4
Rev.10.00 Sep 07, 2005 page 2 of 9
HAT3010R P Channel (Ta = 25C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Note: 5. Pulse test Symbol V (BR) DSS V (BR) GSS IGSS IDSS VGS (off) RDS (on) RDS (on) |yfs| Ciss Coss Crss td (on) tr td (off) tf VDF trr Min -60 20 -- -- -1.0 -- -- 3 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 60 90 5 1350 135 85 20 15 55 10 -0.85 50 Max -- -- 10 -1 -2.5 76 130 -- -- -- -- -- -- -- -- -1.10 -- Unit V V A A V m m S pF pF pF ns ns ns ns V ns Test Conditions ID = -10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = -60 V, VGS = 0 VDS = -10 V, ID = -1 mA ID = -2.5 A, VGS = -10 V Note 5 ID = -2.5 A, VGS = -4.5 V ID = -2.5 A, VDS = -10 V VDS = -10 V VGS = 0 f = 1 MHz VGS = -10 V, ID = -2.5 A VDD -30 V RL = 12 Rg = 4.7 IF = -5 A, VGS = 0 IF = -5 A, VGS = 0 diF/dt = 100 A/s
Note 5 Note 5 Note 5
Rev.10.00 Sep 07, 2005 page 3 of 9
HAT3010R
Main Characteristics
N Channel
Maximum Safe Operation Area
100 10
10
Typical Output Characteristics
10 V 4V
ID (A)
DC
Op
1
Drain Current
0.1
Operation in this area is limited by RDS (on) Ta = 25C 1 shot Pulse
Drain Current
s 1m s =1 0m era tio s n( PW 1 Note 0s 6 )
PW
ID (A)
10
10
0
s
3V Pulse Test
8
6
4
0.01
2
2.5 V VGS = 2 V 0 2 4 6 8 10
0.001 0.1
0 0.3 1 3 10 30 100
Drain to Source Voltage VDS (V)
Note 6: When using the glass epoxy board (FR4 40 x 40 x 1.6 mm)
Drain to Source Voltage
VDS (V)
Typical Transfer Characteristics
Drain to Source Saturation Voltage vs. Gate to Source Voltage
Drain to Source Saturation Voltage VDS (on) (mV)
10 VDS = 10 V Pulse Test
300
Pulse Test
ID (A)
8
200 ID = 5 A 100 2A 1A 0 5 10 15 20
6
Drain Current
4 Tc = 75C 2
25C
-25C
0 0
1
2
3
4
5
0
Gate to Source Voltage
VGS (V)
Gate to Source Voltage
VGS (V)
1.0 Pulse Test 0.5
Static Drain to Source on State Resistance RDS (on) ()
Static Drain to Source on State Resistance vs. Drain Current
Static Drain to Source on State Resistance vs. Temperature
0.10 Pulse Test 0.08 1 A, 2 A 0.06 ID = 5 A VGS = 4.5 V 1 A, 2 A, 5 A 10 V
Drain to Source on State Resistance RDS (on) ()
0.2 0.1 0.05 VGS = 4.5 V 10 V
0.04
0.02 0.01
0.02
1
3
10
30
100
0 -40
0
40
80
120
160
Drain Current
ID (A)
Case Temperature
Tc (C)
Rev.10.00 Sep 07, 2005 page 4 of 9
HAT3010R
Forward Transfer Admittance vs. Drain Current
Forward Transfer Admittance |yfs| (S) Reverse Recovery Time trr (ns)
50 1000 500
Body-Drain Diode Reverse Recovery Time
20 Tc = -25C 10 25C 5 75C
200 100 50
2 1 0.5 0.1 VDS = 10 V Pulse Test 0.3 1 3 10 30 100
20 10 0.1
di / dt = 100 A / s VGS = 0, Ta = 25C 0.3 1 3 10 30 100
Drain Current ID (A) Typical Capacitance vs. Drain to Source Voltage
VDS (V)
5000 2000 100
Reverse Drain Current
IDR (A)
Dynamic Input Characteristics
ID = 6 A 80 VDD = 50 V 25 V 10 V VDS 40 VGS 8 16
Capacitance C (pF)
1000 500 200 100 50 Crss 20 10 0 10 20 30 40 50 VGS = 0 f = 1 MHz Coss Ciss
Drain to Source Voltage
60
12
20
0 0 8 16
VDD = 50 V 25 V 10 V 24 32 40
4
0
Drain to Source Voltage VDS (V)
Gate Charge
Qg (nc)
Switching Characteristics
1000 300 100 30 10 3 1 0.1 td(off) td(on) tf tr
Reverse Drain Current vs. Source to Drain Voltage
10
Reverse Drain Current IDR (A)
VGS = 10 V, VDD = 30 V PW = 5 s, duty 1 %
Pulse Test 10 V
Switching Time t (ns)
8
6
5V
4
VGS = 0, -5 V
2
0 0.3 1 3 10 30 100 0 0.4 0.8 1.2 1.6 2.0
Drain Current
ID (A)
Source to Drain Voltage
VSD
(V)
Rev.10.00 Sep 07, 2005 page 5 of 9
Gate to Source Voltage
VGS (V)
20
HAT3010R P Channel
Maximum Safe Operation Area
-100
10 0 1m s DC s =1 Op 0m era s -1 tio n( PW 1 Note Operation in 0s 7 ) -0.1 this area is limited by RDS (on)
10 s
Typical Output Characteristics
-10 -10 V Pulse Test -6 V -4.5 V -6 -3.5 V
ID (A)
PW
Drain Current
Drain Current
ID (A)
-10
-8
-4 -3 V -2 VGS = -2.5 V 0
-0.01 Ta = 25C 1 shot Pulse -1 -3 -10 -30 -100
-0.001 -0.1 -0.3
0
-2
-4
-6
-8
-10
Drain to Source Voltage VDS (V)
Note 7: When using the glass epoxy board (FR4 40 x 40 x 1.6 mm)
Drain to Source Voltage
VDS (V)
Typical Transfer Characteristics
Drain to Source Saturation Voltage vs. Gate to Source Voltage
Drain to Source Saturation Voltage VDS (on) (V)
-10 VDS = -10 V Pulse Test
-1.0
Pulse Test
ID (A)
-8
-0.8
-6
-0.6
Drain Current
-4 Tc = 75C 25C -25C 0 0 -1 -2 -3 -4 -5
-0.4 ID = -5 A -0.2 -2 A
-1 A
-2
0
0
-5
-10
-15
-20
Gate to Source Voltage
VGS (V)
Gate to Source Voltage
VGS (V)
1.0 Pulse Test 0.5
Static Drain to Source on State Resistance RDS (on) ()
Static Drain to Source on State Resistance vs. Drain Current
Static Drain to Source on State Resistance vs. Temperature
0.25 Pulse Test
Drain to Source on State Resistance RDS (on) ()
0.20 -5 V 0.15 ID = -1 A, -2 A VGS = -4.5 V 0.10 -5 V 0.05 -10 V 0 -40 0 40 80 120 160 -1 A, -2 A
0.2 0.1 0.05 VGS = -4.5 V
-10 V
0.02 0.01 -1
-3
-10
-30
-100
Drain Current
ID (A)
Case Temperature
Tc (C)
Rev.10.00 Sep 07, 2005 page 6 of 9
HAT3010R
Forward Transfer Admittance vs. Drain Current
Forward Transfer Admittance |yfs| (S) Reverse Recovery Time trr (ns)
50 1000 500
Body-Drain Diode Reverse Recovery Time
20 10 Tc = -25C 5 75C 2 1 0.5 -0.1 -0.3 VDS = -10 V Pulse Test -1 -3 -10 -30 -100 25C
200 100 50
20 10 -0.1 -0.3
di / dt = 100 A / s VGS = 0, Ta = 25C -1 -3 -10 -30 -100
Drain Current ID (A) Typical Capacitance vs. Drain to Source Voltage
VDS (V)
5000 2000 0
Reverse Drain Current
IDR (A)
Dynamic Input Characteristics
VDD = -10 V -25 V -50 V
Capacitance C (pF)
-20
-4
1000 500 200 100 50
Ciss
Drain to Source Voltage
-40 VDS -60 VDD = -10 V -25 V -50 V ID = -5 A 0 8 16
VGS
-8
Coss Crss
-12
-80
-16
20 10 0
VGS = 0 f = 1 MHz -10 -20 -30 -40 -50
-100
24
32
-20 40
Drain to Source Voltage VDS (V)
Gate Charge
Qg (nc)
Switching Characteristics
1000 300 100 30 10 3 td(off) td(on) tf VGS = -10 V, VDD = -30 V PW = 5 s, duty 1 % -1 -3 -10 -30 -100 tr -10
Reverse Drain Current vs. Source to Drain Voltage
Reverse Drain Current IDR (A)
Pulse Test
Switching Time t (ns)
-8 -10 V -6 -5 V
VGS = 0, 5 V
-4
-2
1 -0.1 -0.3
0 0 -0.4 -0.8 -1.2 -1.6 -2.0
Drain Current
ID (A)
Source to Drain Voltage
VSD
(V)
Rev.10.00 Sep 07, 2005 page 7 of 9
Gate to Source Voltage
VGS (V)
0
HAT3010R Common
Power vs. Temperature Derating
4.0
Pch (W)
Test Condition: When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10 s
3.0
Channel Dissipation
2 Dr
2.0
1 Dr ive
1.0
Op
ive
er
Op
at
er
ion
at ion
0
0
50
100
150
200
Ambient Temperature
Normalized Transient Thermal Impedance s (t)
10
Ta (C)
Normalized Transient Thermal Impedance vs. Pulse Width (1 Drive Operation)
1
D=1 0.5
0.1
0.2 0.1
0.05
0.01
0.02 0.01
ls pu e
ch - f (t) = s (t) * ch - f ch - f = 125C/W, Ta = 25C When using the glass epoxy board (FR4 40 x 40 x 1.6 mm) PDM PW T 1m 10 m 100 m 1 10 100 1000 10000 D= PW T
0.001
1s
ho
t
0.0001 10
100
Pulse Width PW (S) Normalized Transient Thermal Impedance vs. Pulse Width (2 Drive Operation)
Normalized Transient Thermal Impedance s (t)
10
1
D=1 0.5
0.1
0.2 0.1
0.05
0.01
0.02 0.01
e uls
ch - f (t) = s (t) * ch - f ch - f = 166C/W, Ta = 25C When using the glass epoxy board (FR4 40 x 40 x 1.6 mm) PDM PW T 1m 10 m 100 m 1 10 100 1000 10000 D= PW T
0.001
1s
ho
tp
0.0001 10
100
Pulse Width PW (S)
Rev.10.00 Sep 07, 2005 page 8 of 9
HAT3010R
Package Dimensions
JEITA Package Code P-SOP8-3.95 x 4.9-1.27 RENESAS Code PRSP0008DD-D Package Name FP-8DAV MASS[Typ.] 0.085g
*1 D
F
8
5
*2 E HE
bp
Index mark
1
Z e
4
*3 bp xM
c
Terminal cross section (Ni/Pd/Au plating)
NOTE) 1. DIMENSIONS "*1(Nom)" AND "*2" DO NOT INCLUDE MOLD FLASH. 2. DIMENSION "*3" DOES NOT INCLUDE TRIM OFFSET.
Reference Symbol
Dimension in Millimeters Min Nom 4.90 3.95 Max 5.3
L1
D E A2 A1 A 0.10
0.14
0.25 1.75
A
bp b1
0.34
0.40
0.46
A1
c
0.15
0.20
0.25
L
c1 0 HE 5.80 6.10 1.27 0.25 0.1 0.75 0.40 0.60 1.08 1.27 8 6.20
y
Detail F
e x y Z L L1
Ordering Information
Part Name Quantity Shipping Container HAT3010R-EL-E 2500 pcs Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product.
Rev.10.00 Sep 07, 2005 page 9 of 9
Sales Strategic Planning Div.
Keep safety first in your circuit designs!
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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