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Freescale Semiconductor Technical Data
MPVZ5050 Rev 0, 07/2007
Integrated Silicon Pressure Sensor On-Chip Signal Conditioned, Temperature Compensated and Calibrated
The MPVZ5050G series piezoresistive transducer is a state-of-the-art monolithic silicon pressure sensor designed for a wide range of applications, but particularly those employing a microcontroller or microprocessor with A/D inputs. This patented, single element transducer combines advanced micromachining techniques, thin-film metallization, and bipolar processing to provide an accurate, high level analog output signal that is proportional to the applied pressure. Features * * * * 2.5% Maximum Error over 0 to 85C Ideally suited for Microprocessor or Microcontroller-Based Systems Temperature Compensated Over -40 to +125C Patented Silicon Shear Stress Strain Gauge ORDERING INFORMATION
Device Type Options Case No. MPX Series Order No. Packing Options Device Marking 1 2 3 4
MPVZ5050G SERIES
INTEGRATED PRESSURE SENSOR 0 to 50 kPa (0 to 7.25 psi) 0.2 to 4.7 V Output SMALL OUTLINE PACKAGE
MPVZ5050GW7U CASE 1560-02
SMALL OUTLINE PACKAGE (MPVZ5050G SERIES) Ported Elements Axial Port 1560 MPVZ5050GW7U Rails MZ5050GW
SMALL OUTLINE PACKAGE PIN NUMBERS(1)
N/C VS Gnd Vout 5 6 7 8 N/C N/C N/C N/C
1. Pins 1, 5, 6, 7, and 8 are internal device connections. Do not connect to external circuitry or ground. Pin 1 is noted by the notch in the lead.
VS
Sensing Element
Thin Film Temperature Compensation and Gain Stage #1
Gain Stage #2 and Ground Reference Shift Circuitry
Vout
GND
Pins 1, 5, 6, 7, and 8 are NO CONNECTS for Small Outline Package Device
Figure 1. Fully Integrated Pressure Sensor Schematic
(c) Freescale Semiconductor, Inc., 2007. All rights reserved.
Table 1. Maximum Ratings(1)
Rating Maximum Pressure (P1 > P2) Storage Temperature Operating Temperature Symbol Pmax Tstg TA Value 200 -40 to +125 -40 to +125 Unit kPa C C
1. Exposure beyond the specified limits may cause permanent damage or degradation to the device.
Table 2. . Operating Characteristics (VS = 5.0 Vdc, TA = 25C unless otherwise noted, P1 > P2. Decoupling circuit shown in Figure 4 required to meet electrical specifications.)
Characteristic Pressure Range(1) Supply Voltage(2) Supply Current Minimum Pressure Offset(3) @ VS = 5.0 Volts Full Scale Output(4) @ VS = 5.0 Volts Full Scale Span(5) @ VS = 5.0 Volts Accuracy(6) Sensitivity Response Time(7) Output Source Current at Full Scale Output Warm-Up Time(8) Offset Stability(9) 1. 1.0 kPa (kiloPascal) equals 0.145 psi. 2. Device is ratiometric within this specified excitation range. 3. Offset (Voff) is defined as the output voltage at the minimum rated pressure. 4. Full Scale Output (VFSO) is defined as the output voltage at the maximum or full rated pressure. 5. Full Scale Span (VFSS) is defined as the algebraic difference between the output voltage at full rated pressure and the output voltage at the minimum rated pressure. 6. Accuracy (error budget) consists of the following: * Linearity: Output deviation from a straight line relationship with pressure over the specified pressure range. * Temperature Hysteresis: Output deviation at any temperature within the operating temperature range, after the temperature is cycled to and from the minimum or maximum operating temperature points, with zero differential pressure applied. * Pressure Hysteresis: Output deviation at any pressure within the specified range, when this pressure is cycled to and from the minimum or maximum rated pressure at 25C. * TcSpan: Output deviation over the temperature range of 0 to 85C, relative to 25C. * TcOffset: Output deviation with minimum pressure applied, over the temperature range of 0 to 85C, relative to 25C. * Variation from Nominal: The variation from nominal values, for Offset or Full Scale Span, as a percent of VFSS at 25C. 7. Response Time is defined as the time for the incremental change in the output to go from 10% to 90% of its final value when subjected to a specified step change in pressure. 8. Warm-up Time is defined as the time required for the product to meet the specified output voltage after the Pressure has been stabilized. 9. Offset Stability is the product's output deviation when subjected to 1000 hours of Pulsed Pressure, Temperature Cycling with Bias Test. (0 to 85C) Symbol POP VS Io Voff Min 0 4.75 -- 0.088 Typ -- 5.0 7.0 0.2 Max 50 5.25 10 0.313 Unit kPa Vdc mAdc Vdc
(0 to 85C)
VFSO
4.587
4.7
4.813
Vdc
(0 to 85C)
VFSS
--
4.5
--
Vdc
(0 to 85C)
-- V/P tR Io+ -- --
-- -- -- -- -- --
-- 90 1.0 0.1 20 0.5
2.5 -----------
%VFSS mV/kPa ms mAdc ms %VFSS
MPVZ5050 2 Sensors Freescale Semiconductor
Figure 3 illustrates the Differential/Gauge Sensing Chip in the basic chip carrier (Case 482A). A fluorosilicone gel isolates the die surface and wire bonds from the environment, while allowing the pressure signal to be transmitted to the sensor diaphragm. The MPVZ5050G series pressure sensor operating characteristics, and internal reliability and qualification tests are based on use of dry air as the pressure media. Media, other than dry air, may have adverse effects on sensor performance and long-term reliability. Contact the factory for information regarding media compatibility in your application.
5.0 4.5 Transfer Function: Vout = VS*(0.018*P+0.04) ERROR 4.0 VS = 5.0 Vdc 3.5 TEMP = 0 to 85C 3.0 Output (V) 2.5 2.0 1.5 1.0 0.5 0 0 5 10 15 20 25 MAX
Figure 2 shows the sensor output signal relative to pressure input. Typical, minimum, and maximum output curves are shown for operation over a temperature range of 0 to 85C using the decoupling circuit shown in Figure 4. The output will saturate outside of the specified pressure range. Figure 4 shows the recommended decoupling circuit for interfacing the output of the integrated sensor to the A/D input of a microprocessor or microcontroller. Proper decoupling of the power supply is recommended.
TYPICAL
MIN
30
35
40
45
50
55
Differential Pressure (kPa)
Figure 2. Output versus Pressure Differential
Fluorosilicone Gel Die Coat P1 Wire Bond
Die
Stainless Steel Cap
+5 V
Thermoplastic Case Vs
Vout
OUTPUT
Lead Frame 1.0 F P2 Differential Sensing Element 0.01 F
IPS GND 470 pF
Die Bond
Figure 3. Cross-Sectional Diagram (not to scale)
Figure 4. Recommended Power Supply Decoupling and Output Filtering (For additional output filtering, please refer to Application Note AN1646.)
MPVZ5050 Sensors Freescale Semiconductor 3
Transfer Function
Nominal Transfer Value: Vout = VS (P x 0.018 + 0.04)
(Pressure Error x Temp. Factor x 0.018 x VS) VS = 5.0 V 0.25 Vdc
Temperature Error Band
MPVZ5050G SERIES
4.0 3.0 Temperature Error Factor 2.0 1.0 0.0 -40 -20 0 20 40 60 80 100 120 140 Temperature in C NOTE: The Temperature Multiplier is a linear response from 0 to -40C and from 85 to 125C. Temp -40 0 to 85 +125 Multiplier 3 1 3
Pressure Error Band
Error Limits for Pressure 3.0 2.0 Pressure Error (kPa) 1.0 0.0 -1.0 -2.0 -3.0 Pressure 0 to 50 (kPa) Error (Max) 1.25 (kPa) 0 10 20 30 40 50 60 Pressure (in kPa)
PRESSURE (P1)/VACUUM (P2) SIDE IDENTIFICATION TABLE
Freescale designates the two sides of the pressure sensor as the Pressure (P1) side and the Vacuum (P2) side. The Pressure (P1) side is the side containing fluorosilicone gel which protects the die from harsh media. The MPX pressure
Part Number MPVZ5050GW7U
sensor is designed to operate with positive differential pressure applied, P1 > P2. The Pressure (P1) side may be identified by using the table below:
Case Type 1560-02 Pressure (P1) Side Identifier Vertical Port Attached
MPVZ5050 4 Sensors Freescale Semiconductor
PACKAGE DIMENSIONS
PAGE 1 OF 3
CASE 1560-02 ISSUE C SMALL OUTLINE PACKAGE
MPVZ5050 Sensors Freescale Semiconductor 5
PACKAGE DIMENSIONS
PAGE 2 OF 3
CASE 1560-02 ISSUE C SMALL OUTLINE PACKAGE
MPVZ5050 6 Sensors Freescale Semiconductor
PACKAGE DIMENSIONS
PAGE 3 OF 3
CASE 1560-02 ISSUE C SMALL OUTLINE PACKAGE
MPVZ5050 Sensors Freescale Semiconductor 7
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MPVZ5050 Rev 0 07/2007

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