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| FJP5555 -- NPN Silicon Transistor March 2008 FJP5555 NPN Silicon Transistor High Voltage Switch Mode Application * Fast Speed Switching * Wide Safe Operating Area * Suitable for Electronic Ballast Application 1 TO-220 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings * Symbol BVCBO BVCEO BVEBO IC ICP PC TJ TSTG TC=25C unless otherwise noted Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Collector Dissipation. Junction Temperature Storage Junction Temperature Range Value 1050 400 14 5 10 85 150 - 55 ~ 150 Units V V V A A W C C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Ordering Information Part Number FJP5555TU Marking J5555 Package TO220 Packing Method TUBE Remarks (c) 2007 Fairchild Semiconductor Corporation FJP5555 Rev. 1.0.0 1 www.fairchildsemi.com FJP5555 -- NPN Silicon Transistor Electrical Characteristics * TC=25C unless otherwise noted Symbol BVCBO BVCEO BVEBO hFE Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage * Conditions IC=500mA, IE=0 IC=5mA, IB=0 IE=500mA, IC=0 VCE=5V, IC=10mA VCE=3V, IC=0.8A Min. 1050 400 14 10 20 Typ. Max Units V V V DC Current Gain 40 0.5 1.5 1.2 45 1.0 1.2 0.3 V V V pF ms ms ms ms ms ms mJ VCE(sat) Collector-Emitter Saturation Voltage IC=1A, IB=0.2A IC=3.5A, IB=1.0A VBE(sat) Cob tON tSTG tF tON tSTG tF EAS Base-Emitter Saturation Voltage Output Capacitance Turn On Time Storage Time Fall Time Turn On Time Storage Time Fall Time Avalanche Energy IC=3.5A, IB=1.0A VCB=10V, f=1MHz VCC=125V, I C=0.5A IB1=45mA, IB2=0.5A RL=250W VCC=250V, I C=2.5A IB1=0.5A, IB2=1.0A RL=100W 6 2.0 2.5 0.3 L= 2mH * Pulse Test: Pulse Width300ms, Duty Cycle2% (c) 2007 Fairchild Semiconductor Corporation FJP5555 Rev. 1.0.0 2 www.fairchildsemi.com FJP5555 -- NPN Silicon Transistor Typical Characteristics 5.0 4.5 100 Ta = 75 C Ta = 125 C o o VCE = 5V IC [A], COLLECTOR CURRENT 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 IB = 600mA hFE, DC CURRENT GAIN Ta = - 25 C 10 o Ta = 25 C o IB = 200mA IB = 100mA 0 1 2 3 4 5 6 7 8 9 1 1E-3 0.01 0.1 1 10 VCE [V], COLLECTOR-EMITTER VOLTAGE IC [A], COLLECTOR CURRENT Figure 1. Static Characteristics Figure 2. DC Current Gain 10 VCE(sat) [V], SATURATION VOLTAGE IC = 5 IB Ta = 125 C 1 o VBE(sat) [V], SATURATION VOLTAGE 10 IC = 5 IB 1 Ta = - 25 C o Ta = 25 C o Ta = 75 C Ta = - 25 C Ta = 25 C o o o Ta = 125 C 0.1 o Ta = 75 C o 0.1 0.01 0.01 0.1 1 10 0.01 0.01 0.1 1 10 IC [A], COLLECTOR CURRENT IC [A], COLLECTOR CURRENT Figure 3. Saturation Voltage Figure 4. Saturation Voltage 1 tSTG & tF [us], SWITCHING TIME tSTG & tF [us], SWITCHING TIME tSTG 1 tSTG 0.1 tF 0.1 VCC=125V IB1=45mA, IB2=0.5A tF VCC=250V IB1=0.5A, IB2=1.0A 0.01 0.1 1 0.01 0.1 1 10 IC [A], COLLECTOR CURRENT IC [A], COLLECTOR CURRENT Figure 5. Resistive Load Switching Figure 6. Resistive Load Switching (c) 2007 Fairchild Semiconductor Corporation FJP5555 Rev. 1.0.0 3 www.fairchildsemi.com FJP5555 -- NPN Silicon Transistor Typical Characteristics (Continued) 100 90 IC [A], COLLECTOR CURRENT PC[W], POWER DISSIPATION 10 80 70 60 50 40 30 20 10 0 VCC=50V, L=1mH IB1=3A, RB2=0 1 10 100 1000 0 25 50 o 75 100 125 150 175 VCE [V], COLLECTOR-EMITTER VOLTAGE Tc[ C], CASE TEMPERATURE Figure 7. Reverse Biased Safe Operating Area Figure 8. Power Derating 100 IC[A], COLLECTOR CURRENT 10 ICP(max) IC(max) DC 100ms 10ms 1 0.1 Tc=25 C Single Pulse 0.01 1 10 100 1000 o VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 9. Forward Biased Safe Operating Area (c) 2007 Fairchild Semiconductor Corporation FJP5555 Rev. 1.0.0 4 www.fairchildsemi.com FJP5555 -- NPN Silicon Transistor Mechanical Dimensions TO220 (c) 2007 Fairchild Semiconductor Corporation FJP5555 Rev. 1.0.0 5 www.fairchildsemi.com FJP5555 FJP5555 NPN Silicon Transistor (c) 2007 Fairchild Semiconductor Corporation FJP5555 Rev. 1.0.0 6 www.fairchildsemi.com |
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