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HERAF801G - HERAF808G
Isolated 8.0 AMPS. Glass Passivated High Efficient Rectifiers
ITO-220AC
.185(4.7) .173(4.4) .124(3.16) .118(3.00)
.406(10.3) .390(9.90) .134(3.4)DIA .113(3.0)DIA
.272(6.9) .248(6.3)
.112(2.85) .100(2.55)
Features
Glass passivated chip junction. High efficiency, Low VF High current capability High reliability High surge current capability For use in low voltage, high frequency inventor, free wheeling, and polarity protection application.
.606(15.5) .583(14.8)
.063(1.6) MAX
.161(4.1) .146(3.7)
.110(2.8) .098(2.5)
.030(0.76) .020(0.50)
.055(1.4) .043(1.1) .035(0.9) .020(0.5)
.071(1.8) MAX
.543(13.8) .512(13.2)
Mechanical Data
Cases: ITO-220AC molded plastic Epoxy: UL 94V0 rate flame retardant Terminals: Pure tin plated, lead free solderable per MIL-STD-202, Method 208 guaranteed Polarity: As marked High temperature soldering guaranteed: o 260 C/ 0.25" (6.35mm) from case for 10 seconds Mounting torque: 5 in - 1bs. Max. Weight: 2.24 grams
2
.100(2.55)
.100(2.55)
PIN 1 PIN 2 CASE
Case Positive
Dimensions in inches and (millimeters)
Maximum Rating and Electrical Characteristics
Rating at 25 oC ambient temperature unless otherwise specified. Single phase, half wave 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%
Type Number
Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current .375"(9.5mm) Lead Length o @TC =100 C Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) Maximum Instantaneous Forward Voltage @8.0A Maximum DC Reverse Current @ T A=25 oC at Rated DC Blocking Voltage @ TA=125 oC Maximum Reverse Recovery Time (Note 1) Typical Junction Capacitance Operating Temperature Range ( Note 2 ) Typical Thermal resistance (Note 3)
Symbol V RRM V RMS V DC I(AV) IFSM VF IR Trr
HERAF HERAF HERAF HERAF HERAF HERAF HERAF HERAF
801G
802G
803G
804G
805G
806G
807G
808G
Units V V V A
50 35 50
100 70 100
200 140 200
300 210 300
400 280 400
600 420 600
800 1000 560 700 800 1000
8.0
150 1.0 1.3 10 400 50 80 2.0 -65 to +150 -65 to +150 80 60 1.7
A V uA uA nS pF o C/W o C o C
Cj
R JC
TJ
Storage Temperature Range TSTG Notes: 1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A 2. Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C. 3. Mounted on Heatsink Size of 2 in x 3 in x 0.25 in Al-Plate.
Version: A06
RATINGS AND CHARACTERISTIC CURVES (HERAF801G THRU HERAF808G)
FIG.1- MAXIMUM FORWARD CURRENT DERATING CURVE
AVERAGE FORWARD CURRENT. (A)
20
FIG.2- TYPICAL REVERSE CHARACTERISTICS
1000
16 12 8 4 0
INSTANTANEOUS REVERSE CURRENT. ( A)
100
Tj=125 0C
10
Tj=75 0C
0
50 CASE TEMPERATURE. ( C)
o
100
150
PEAK FORWARD SURGE CURRENT. (A)
FIG.3- MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT
150
1
Tj=25 0C
120 90 60 30
8.3ms Single Half Sine Wave JEDEC Method
0.1 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
FIG.5- TYPICAL FORWARD CHARACTERISTICS
100
INSTANTANEOUS FORWARD CURRENT. (A)
30
HE RA F8 01 G~ HE RA F8 04 G
0
ER
NUMBER OF CYCLES AT 60Hz
AF
10
80
5G
1
2
5
10
20
50
100
FIG.4- TYPICAL JUNCTION CAPACITANCE
180 150
3 1
HE
RA
F8
06
H G~
AF ER
CAPACITANCE.(pF)
120 90
HE
HE RA F8
0.3 0.1
60 30 0
RA
01G
F8
~H
06
ER
G~
AF
HE
805
G
RA
0.03 0.01 0.4
F8
08
G
1
2
5
10
20
50
100
200
500
1000
0.6
REVERSE VOLTAGE. (V)
0.8 1.0 1.2 1.4 FORWARD VOLTAGE. (V)
H
80
8G
1.6
1.8
FIG.6- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50 NONINDUCTIVE 10 NONINDUCTIVE trr +0.5A DUT (-) PULSE GENERATOR (NOTE 2) NON INDUCTIVE OSCILLOSCOPE (NOTE 1) (+) 0 -0.25A
(+) 50Vdc (approx) (-)
NOTES: 1. Rise Time=7ns max. Input Impedance= 1 megohm 22pf 2. Rise Time=10ns max. Sourse Impedance= 50 ohms
-1.0A 1cm SET TIME BASE FOR 5/ 10ns/ cm
Version: A06

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