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SMPS MOSFET PD - 95011 IRFP26N60LPBF Applications * Zero Voltage Switching SMPS * Telecom and Server Power Supplies * Uninterruptible Power Supplies * Motor Control applications * Lead-Free HEXFET(R) Power MOSFET VDSS RDS(on) typ. Trr typ. ID 600V 210m 170ns 26A Features and Benefits * SuperFast body diode eliminates the need for external diodes in ZVS applications. * Lower Gate charge results in simpler drive requirements. * Enhanced dv/dt capabilities offer improved ruggedness. * Higher Gate voltage threshold offers improved noise immunity. TO-247AC Absolute Maximum Ratings Parameter ID @ TC = 25C Continuous Drain Current, VGS @ 10V ID @ TC = 100C Continuous Drain Current, VGS @ 10V Pulsed Drain Current IDM Max. 26 17 100 470 Units A W W/C V V/ns C c PD @TC = 25C Power Dissipation VGS dv/dt TJ TSTG Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and d 3.8 30 21 -55 to + 150 300 (1.6mm from case ) 1.1(10) Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw Diode Characteristics Symbol IS ISM VSD trr Qrr IRRM ton N*m (lbf*in) Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)Ac Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Forward Turn-On Time Min. Typ. Max. Units --- --- --- --- --- --- --- --- --- --- --- 170 210 670 7.3 26 A 100 1.5 250 320 1000 11 nC A V ns Conditions MOSFET symbol showing the integral reverse G D p-n junction diode. TJ = 25C, IS = 26A, VGS = 0V TJ = 25C, IF = 26A J J f S 1050 1570 f T = 25C, I = 26A, V = 0V f T = 125C, di/dt = 100A/s f TJ = 125C, di/dt = 100A/s S GS TJ = 25C Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) www.irf.com 1 2/12/04 IRFP26N60LPBF Static @ TJ = 25C (unless otherwise specified) Symbol V(BR)DSS V(BR)DSS/TJ RDS(on) VGS(th) IDSS IGSS RG Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Internal Gate Resistance Min. Typ. Max. Units 600 --- --- 3.0 --- --- --- --- --- --- 0.33 210 --- --- --- --- --- 0.8 --- --- 250 5.0 50 2.0 100 -100 --- V m V A mA nA Conditions VGS = 0V, ID = 250A VGS = 10V, ID = 16A V/C Reference to 25C, ID = 1mA VDS = VGS, ID = 250A VDS = 600V, VGS = 0V VDS = 480V, VGS = 0V, TJ = 125C VGS = 30V VGS = -30V f = 1MHz, open drain f Dynamic @ TJ = 25C (unless otherwise specified) Symbol gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss eff. Coss eff. (ER) Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Effective Output Capacitance Effective Output Capacitance (Energy Related) Min. Typ. Max. Units 13 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- 31 110 47 42 5020 450 34 230 170 --- 180 61 85 --- --- --- --- --- --- --- --- --- pF ns nC S ID = 26A Conditions VDS = 50V, ID = 16A VDS = 480V VGS = 10V, See Fig. 7 & 15 VDD = 300V ID = 26A RG = 4.3 VGS = 10V, See Fig. 11a & 11b VGS = 0V VDS = 25V = 1.0MHz, See Fig. 5 VGS = 0V,VDS = 0V to 480V f f g Avalanche Characteristics Symbol EAS IAR EAR Parameter Single Pulse Avalanche Energyd Avalanche CurrentA Repetitive Avalanche Energy Typ. --- --- --- Max. 570 26 47 Units mJ A mJ Thermal Resistance Symbol RJC RCS RJA Parameter Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Typ. --- 0.24 --- Max. 0.27 --- 40 Units C/W Notes: Repetitive rating; pulse width limited by max. junction temperature. (See Fig. 11) Starting TJ = 25C, L = 1.7mH, RG = 25, IAS = 26A, dv/dt = 21V/ns. (See Figure 12a) ISD 26A, di/dt 480A/s, VDD V(BR)DSS, TJ 150C. Pulse width 300s; duty cycle 2%. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V DSS . Coss eff.(ER) is a fixed capacitance that stores the same energy as Coss while VDS is rising from 0 to 80% V DSS . 2 www.irf.com IRFP26N60LPBF 1000 TOP VGS 15V 12V 10V 8.0V 7.0V 6.5V 6.0V 5.5V 100 TOP VGS 15V 12V 10V 8.0V 7.0V 6.5V 6.0V 5.5V ID, Drain-to-Source Current (A) 100 ID, Drain-to-Source Current (A) 10 10 BOTTOM BOTTOM 5.5V 1 1 0.1 5.5V 20s PULSE WIDTH Tj = 25C 20s PULSE WIDTH Tj = 150C 0.1 100 0.1 1 10 100 0.01 0.1 1 10 VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000.00 3.0 RDS(on) , Drain-to-Source On Resistance ID = 26A 2.5 ID, Drain-to-Source Current () VGS = 10V 100.00 10.00 (Normalized) T J = 150C 2.0 1.5 TJ = 25C 1.00 1.0 VDS = 50V 20s PULSE WIDTH 0.10 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 VGS , Gate-to-Source Voltage (V) T J , Junction Temperature (C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRFP26N60LPBF 100000 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, C ds SHORTED Crss = Cgd Coss = Cds + Cgd 30 25 20 Energy (J) 10000 C, Capacitance(pF) Ciss 1000 15 10 5 Coss 100 Crss 10 1 10 100 1000 0 0 100 200 300 400 500 600 700 VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typ. Output Capacitance Stored Energy vs. VDS 12.0 ID= 26A VGS , Gate-to-Source Voltage (V) 1000.00 VDS= 480V VDS= 300V VDS= 120V 8.0 6.0 4.0 2.0 0.0 0 25 50 75 100 125 150 Q G Total Gate Charge (nC) ISD, Reverse Drain Current (A) 10.0 100.00 T J = 150C 10.00 1.00 T J = 25C 0.10 0.2 0.4 0.6 0.8 1.0 1.2 VGS = 0V 1.4 1.6 VSD, Source-to-Drain Voltage (V) Fig 7. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 8. Typical Source-Drain Diode Forward Voltage 4 www.irf.com IRFP26N60LPBF 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) ID, Drain Current (A) 30 25 20 15 10 5 10msec 0 1 10 100 1000 10000 25 50 75 100 125 150 VDS, Drain-to-Source Voltage (V) T C , Case Temperature (C) ID, Drain-to-Source Current (A) 100 10 100sec 1 Tc = 25C Tj = 150C Single Pulse 0.1 1msec Fig 9. Maximum Safe Operating Area Fig 10. Maximum Drain Current vs. Case Temperature VDS VGS RG 10V Pulse Width 1 s Duty Factor 0.1 % RD VDS 90% D.U.T. + -VDD 10% VGS td(on) tr t d(off) tf Fig 11a. Switching Time Test Circuit Fig 11b. Switching Time Waveforms www.irf.com 5 IRFP26N60LPBF 1 Thermal Response ( Z thJC ) 0.1 D = 0.50 0.20 0.10 0.05 0.02 0.01 SINGLE PULSE ( THERMAL RESPONSE ) P DM t1 t2 0.01 0.001 Notes: 1. Duty factor D = 2. Peak T t1/ t 2 +T C J = P DM x Z thJC 0.0001 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 12. Maximum Effective Transient Thermal Impedance, Junction-to-Case 6.0 VGS(th) Gate threshold Voltage (V) 5.0 4.0 ID = 250A 3.0 2.0 -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( C ) Fig 13. Threshold Voltage vs. Temperature 6 www.irf.com IRFP26N60LPBF 1050 EAS , Single Pulse Avalanche Energy (mJ) 900 750 600 450 300 150 0 25 50 75 ID 12A 16A BOTTOM 26A TOP 100 125 150 Starting T J , Junction Temperature (C) Fig 14a. Maximum Avalanche Energy vs. Drain Current 15V V(BR)DSS VDS L DRIVER tp RG 20V D.U.T IAS tp + - VDD A 0.01 I AS Fig 14b. Unclamped Inductive Test Circuit Current Regulator Same Type as D.U.T. Fig 14c. Unclamped Inductive Waveforms QG 50K 12V .2F .3F VGS V D.U.T. + V - DS QGS VG QGD VGS 3mA IG ID Current Sampling Resistors Charge Fig 15a. Gate Charge Test Circuit Fig 15b. Basic Gate Charge Waveform www.irf.com 7 IRFP26N60LPBF Peak Diode Recovery dv/dt Test Circuit D.U.T + + Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer - + RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test + VDD Driver Gate Drive P.W. Period D= P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple 5% ISD * VGS = 5V for Logic Level Devices Fig 16. For N-Channel HEXFET(R) Power MOSFETs 8 www.irf.com IRFP26N60LPBF TO-247AC Package Outline 15.90 (.626) 15.30 (.602) -B3.65 (.143) 3.55 (.140) -A0.25 (.010) M D B M 5.50 (.217) 20.30 (.800) 19.70 (.775) 1 2 3 -C14.80 (.583) 14.20 (.559) 4.30 (.170) 3.70 (.145) 0.80 (.031) 3X 0.40 (.016) C AS 2.60 (.102) 2.20 (.087) Dimensions are shown in millimeters (inches) -D5.30 (.209) 4.70 (.185) 2.50 (.089) 1.50 (.059) 4 2X 5.50 (.217) 4.50 (.177) NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH. 3 CONFORMS TO JEDEC OUTLINE TO-247-AC. 2.40 (.094) 2.00 (.079) 2X 5.45 (.215) 2X 1.40 (.056) 3X 1.00 (.039) 0.25 (.010) M 3.40 (.133) 3.00 (.118) LEAD ASSIGNMENTS Hexfet IGBT 1 -LEAD ASSIGNMENTS Gate 1 - Gate 1 - GATE2 - Collector 2 - Drain 2 - DRAIN 3 - Source 3 - Emitter 3 - SOURCE 4 - DrainDRAIN - Collector 4 4- TO-247AC Part Marking Information EXAMPLE: T HIS IS AN IRFPE30 WIT H ASSEMBLY LOT CODE 5657 ASSEMBLED ON WW 35, 2000 IN THE AS SEMBLY LINE "H" Note: "P" in assembly line position indicates "Lead-Free" INT ERNATIONAL RECT IFIER LOGO ASSEMBLY LOT CODE PART NUMBER IRFPE30 56 035H 57 DAT E CODE YEAR 0 = 2000 WEEK 35 LINE H TO-247AC package is not recommended for Surface Mount Application. Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR's Web site. www.irf.com IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.2/04 9 |
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