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| SI5857DU Vishay Siliconix P-Channel 20-V (D-S) MOSFET With Schottky Diode MOSFET PRODUCT SUMMARY VDS (V) - 20 RDS(on) () 0.058 at VGS = - 4.5 V 0.100 at VGS = - 2.5 V ID (A)a 6 6 Qg (Typ.) 5.5 nC FEATURES * Halogen-free * LITTLE FOOT(R) Plus Power MOSFET * New Thermally Enhanced PowerPAK(R) ChipFET(R) Package - Small Footprint Area - Low On-Resistance - Thin 0.8 mm Profile RoHS COMPLIANT SCHOTTKY PRODUCT SUMMARY VKA (V) 20 Vf (V) Diode Forward Voltage 0.375 at 1 A IF (A)a 2 APPLICATIONS * Charging Switch for Portable Devices - With Integrated Low Vf Trench Schottky Diode PowerPAK(R) ChipFET (R) Dual Marking Code JA A A K K D D S G XXX Lot Traceability and Date Code Part # Code S K G Bottom View Ordering Information: SI5857DU-T1-GE3 (Lead (Pb)-free and Halogen-free) D P-Channel MOSFET A ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise noted Parameter Drain-Source Voltage (MOSFET) Reverse Voltage (Schottky) Gate-Source Voltage (MOSFET) TC = 25 C TC = 70 C TA = 25 C TA = 70 C TC = 25 C TA = 25 C Symbol VDS VKA VGS Limit - 20 20 12 6a 6a - 5b, c - 4b, c - 20 - 6a 1.9b, c 2 7 10.4 6.7 2.3b, c 1.5b, c 7.8 5 2.1 1.3 - 55 to 150 260 Unit V Continuous Drain Current (TJ = 150 C) (MOSFET) ID Pulsed Drain Current (MOSFET) Continuous Source Current (MOSFET Diode Conduction) Average Forward Current (Schottky) Pulsed Forward Current (Schottky) TC = 25 C TC = 70 C TA = 25 C TA = 70 C TC = 25 C TC = 70 C TA = 25 C TA = 70 C IDM IS IF IFM A Maximum Power Dissipation (MOSFET) PD W Maximum Power Dissipation (Schottky) PD W Operating Junction and Storage Temperature Range Soldering Recommendation (Peak Temperature)d, e Document Number: 73696 S-81449-Rev. C, 23-Jun-08 TJ, Tstg C www.vishay.com 1 SI5857DU Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient (MOSFET)b, f Maximum Junction-to-Case (Drain) (MOSFET) Maximum Junction-to-Ambient (Schottky) b, g Symbol RthJA RthJC RthJA RthJC Typical 43 9.5 49 13 Maximum 55 12 61 16 Unit C/W Maximum Junction-to-Case (Drain) (Schottky) Notes: a. Package limited. b. Surface Mounted on FR4 Board. c. t 5 s. d. See Solder Profile (http://www.vishay.com/doc?73257). The PowerPAK ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions for MOSFETS is 105 C/W. g. Maximum under Steady State conditions for Schottky is 110 C/W. SPECIFICATIONS TJ = 25 C, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf td(on) tr td(off) tf VDD = - 10 V, RL = 2.5 ID - 4 A, VGEN = - 10 V, Rg = 1 VDD = - 10 V, RL = 2.5 ID - 4 A, VGEN = - 4.5 V, Rg = 1 f = 1 MHz VDS = - 10 V, VGS = - 10 V, ID = - 5 A VDS = - 10 V, VGS = - 4.5 V, ID = - 5 A VDS = - 10 V, VGS = 0 V, f = 1 MHz 480 125 90 11 5.5 1.2 1.8 9 11 42 33 50 5 15 25 10 20 65 50 75 10 25 40 20 ns 17 8.5 nC pF VDS VDS/TJ VGS(th)/TJ VGS(th) IGSS IDSS ID(on) RDS(on) gfs VGS = 0 V, ID = - 250 A ID = - 250 A VDS = VGS, ID = - 250 A VDS = 0 V, VGS = 12 V VDS = - 20 V, VGS = 0 V VDS = - 20 V, VGS = 0 V, TJ = 55 C VDS - 5 V, VGS = - 4.5 V VGS = - 4.5 V, ID = - 3.6 A VGS = - 2.5 V, ID = - 1 A VDS = - 10 V, ID = - 3.6 A - 20 0.048 0.081 10 0.058 0.100 - 0.6 - 20 - 19 2.6 - 1.5 100 -1 - 10 V mV/C V ns A A S Symbol Test Conditions Min. Typ. Max. Unit www.vishay.com 2 Document Number: 73696 S-81449-Rev. C, 23-Jun-08 SI5857DU Vishay Siliconix SPECIFICATIONS TJ = 25 C, unless otherwise noted Parameter Continuous Source-Drain Diode Current Pulse Diode Forward Current Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time Symbol IS ISM VSD trr Qrr ta tb IF = - 4 A dI/dt = 100 A/s TJ = 25 C IS = - 4 A, VGS = 0 V - 0.9 25 10 9 16 Test Conditions TC = 25 C Min. Typ. Max. -6 - 20 - 1.2 50 20 Unit Drain-Source Body Diode Characteristics A V ns nC ns Notes: a. Pulse test; pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. SCHOTTKY SPECIFICATIONS TJ = 25 C, unless otherwise noted Parameter Forward Voltage Drop Symbol VF Test Conditions IF = 1 A IF = 1 A, TJ = 125 C Vr = 20 V Maximum Reverse Leakage Current Junction Capacitance Irm CT Vr = 20 V, TJ = 85 C Vr = 20 V, TJ = 125 C Vr = 10 V Min. Typ. 0.34 0.255 0.05 2 10 90 Max. 0.375 0.290 0.500 20 100 pF mA Unit V Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 73696 S-81449-Rev. C, 23-Jun-08 www.vishay.com 3 SI5857DU Vishay Siliconix MOSFET TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 20 VGS = 5 V VGS = 4.5 V 16 I D - Drain Current (A) VGS = 4 V VGS = 3.5 V VGS = 3 V I D - Drain Current (A) 4 5 12 VGS = 2.5 V 8 VGS = 2 V 4 VGS = 1.5 V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3 2 TC = 125 C 1 TC = 25 C TC = - 55 C 0.5 1.0 1.5 2.0 0 0.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics 0.20 800 700 RDS(on) - On-Resistance () 0.16 VGS = 2.5 V C - Capacitance (pF) 600 500 400 300 200 VGS = 4.5 V 0.04 0 4 8 12 16 20 100 Transfer Characteristics Ciss 0.12 0.08 Coss Crss 0 0 2 4 6 8 10 12 14 16 18 20 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage 10 ID = 5.1 A 8 VDS = 10 V 6 VDS = 16 V 4 RDS(on) - On-Resistance (Normalized) 1.4 1.6 VGS = 4.5 V ID = 3.6 A Capacitance VGS - Gate-to-Source Voltage (V) 1.2 1.0 2 0.8 0 0 2 4 6 8 10 12 0.6 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (C) Gate Charge On-Resistance vs. Junction Temperature www.vishay.com 4 Document Number: 73696 S-81449-Rev. C, 23-Jun-08 SI5857DU Vishay Siliconix MOSFET TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 20 R DS(on) - Drain-to-Source On-Resistance () 0.16 ID = 3.6 A 10 I S - Source Current (A) 0.14 0.12 0.10 TA = 125 C 0.08 TJ = 150 C TJ = 25 C 0.06 TA = 25 C 0.04 2.0 2.5 3.0 3.5 4.0 4.5 5.0 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage 1.3 30 On-Resistance vs. Gate-to-Source Voltage 1.2 ID = 250 A 25 1.1 VGS(th) (V) Power (W) 20 1.0 15 0.9 10 0.8 5 0.7 - 50 - 25 0 25 50 75 100 125 150 0 0.001 0.01 0.1 1 Time (s) 10 100 1000 TJ - Temperature ( C) Threshold Voltage 100 Single Pulse Power, Junction-to-Ambient IDM limited Limited by RDS(on)* 10 I D - Drain Current (A) ID(on) limited 100 s 1 1 ms 10 ms 100 ms 1s 10 s DC BVDSS limited 0.1 TA = 25 C Single Pulse 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which R DS(on) is specified Safe Operating Area, Junction-to-Case Document Number: 73696 S-81449-Rev. C, 23-Jun-08 www.vishay.com 5 SI5857DU Vishay Siliconix MOSFET TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 12 12 10 Power Dissipation (W) ID - Drain Current (A) 10 8 Package Limited 6 8 6 4 4 2 2 0 0 25 50 75 100 125 150 0 25 50 75 100 125 150 TC - Case Temperature (C) TC - Case Temperature (C) Current Derating* Power Derating * The power dissipation PD is based on TJ(max) = 150 C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 6 Document Number: 73696 S-81449-Rev. C, 23-Jun-08 SI5857DU Vishay Siliconix MOSFET TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Single Pulse 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 87 C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 0.01 10-4 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.05 Single Pulse 0.01 10-4 0.02 10-3 10-2 Square Wave Pulse Duration (s) 10-1 1 Normalized Thermal Transient Impedance, Junction-to-Case Document Number: 73696 S-81449-Rev. C, 23-Jun-08 www.vishay.com 7 SI5857DU Vishay Siliconix SCHOTTKY TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 100 10 10 I R - Reverse Current (mA) I F - Forward Current (A) TJ = 150 C TJ = 25 C 1 1 20 V 0.1 0.01 10 V 0.001 0.0001 - 50 0.1 - 25 0 25 50 75 100 125 150 0 0.1 0.2 0.3 0.4 0.5 0.6 TJ - Junction Temperature (C) VF - Forward Voltage Drop (V) Reverse Current vs. Junction Temperature 600 Forward Voltage Drop CT - Junction Capacitance (pF) 500 400 300 200 100 0 0 4 8 12 16 20 VKA - Reverse Voltage (V) Capacitance www.vishay.com 8 Document Number: 73696 S-81449-Rev. C, 23-Jun-08 SI5857DU Vishay Siliconix SCHOTTKY TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 93 C/W Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73696. Document Number: 73696 S-81449-Rev. C, 23-Jun-08 www.vishay.com 9 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
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