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SUM65N20-30
Vishay Siliconix
N-Channel 200-V (D-S) 175 C MOSFET
PRODUCT SUMMARY
V(BR)DSS (V) 200 rDS(on) () 0.030 at VGS = 10 V ID (A) 65a
FEATURES
* * * * TrenchFET(R) Power MOSFET 175 C Junction Temperature Low Thermal Resistance Package 100 % Rg Tested
RoHS
COMPLIANT
APPLICATIONS
* Isolated DC/DC Converters
TO-263
D
G G DS S Ordering Information: SUM65N20-30-E3 (Lead (Pb)-free) N-Channel MOSFET
Top View
ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175 C) Pulsed Drain Current Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipationb Operating Junction and Storage Temperature Range
b
Symbol VDS VGS TC = 25 C TC = 125 C ID IDM L = 0.1 mH TC = 25 C TA = 25 Cd IAS EAS PD TJ, Tstg
Limit 200 20 65a 37a 140 35 61 375
c
Unit V
A
mJ W C
3.75 - 55 to 175
THERMAL RESISTANCE RATINGS
Parameter Junction-to-Ambient Junction-to-Case (Drain) Notes: a. Package limited. b. Duty cycle 1 %. c. See SOA curve for voltage derating. d. When Mounted on 1" square PCB (FR-4 material). Document Number: 71702 S-80272-Rev. D, 11-Feb-08 www.vishay.com 1 PCB Mount (TO-263)d Symbol RthJA RthJC Limit 40 0.4 Unit C/W
SUM65N20-30
Vishay Siliconix
SPECIFICATIONS TJ = 25 C, unless otherwise noted
Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Dynamic
b
Symbol V(BR)DSS VGS(th) IGSS IDSS ID(on) rDS(on) gfs Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr
c
Test Conditions VDS = 0 V, ID = 250 A VDS = VGS, ID = 250 A VDS = 0 V, VGS = 20 V VDS = 200 V, VGS = 0 V VDS = 200 V, VGS = 0 V, TJ = 125 C VDS = 200 V, VGS = 0 V, TJ = 175 C VDS 5 V, VGS = 10 V VGS = 10 V, ID = 30 A VGS = 10 V, ID = 30 A, TJ = 125 C VGS = 10 V, ID = 30 A, TJ = 175 C VDS = 15 V, ID = 30 A
Min. 200 2
Typ.
Max.
Unit
4 100 1 50 250
V nA A A
120 0.023 0.030 0.063 0.084 25 5100
S
Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Chargec Gate-Source Chargec Gate-Drain Charge Gate Resistance Turn-On Delay Timec Rise Timec Turn-Off Delay Time Fall Timec
c
VGS = 0 V, VDS = 25 V, f = 1 MHz
480 210 90 130
pF
VDS = 100 V, VGS = 10 V, ID = 85 A 0.5 VDD = 100 V, RL = 1.5 ID 65 A, VGEN = 10 V, Rg = 2.5 Cb
23 34 1.7 24 220 45 200 3.3 35 330 70 300
nC
td(off) tf
ns
Source-Drain Diode Ratings and Characteristics TC = 25 Continuous Current Pulsed Current Forward Voltagea Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IS ISM VSD trr IRM(REC) Qrr
65 140 IF = 65 A, VGS = 0 V IF = 50 A, di/dt = 100 A/s 1.0 130 8 0.52 1.5 200 12 1.2
A V ns A C
Notes: a. Pulse test; pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature.
Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
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Document Number: 71702 S-80272-Rev. D, 11-Feb-08
SUM65N20-30
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 C, unless otherwise noted
140 VGS = 10 thru 7 V 120 I D - Drain Current (A) 100 80 60 40 5V 20 4V 0 0 2 4 6 8 10 0 0 1 2 3 4 5 6 7 VDS - Drain-to-Source Voltage (V) 20 25 C - 55 C I D - Drain Current (A) 6V 120 100 80 60 40 TC = 125 C 140
VGS - Gate-to-Source Voltage (V)
Output Characteristics
180 TC = - 55 C 150 r DS(on) - On-Resistance () g fs - Transconductance (S) 25 C 120 125 C 90 0.045 0.060
Transfer Characteristics
VGS = 10 V 0.030
60
0.015
30
0 0 20 40 60 80 100 120
0.000 0 20 40 60 80 100 120
ID - Drain Current (A)
ID - Drain Current (A)
Transconductance
7000 6000 Ciss C - Capacitance (pF) 5000 4000 3000 2000 1000 0 0 25 50 75 100 125 150 Crss 20
On-Resistance vs. Drain Current
VGS - Gate-to-Source Voltage (V)
16
VDS = 100 V ID = 65 A
12
8
4
Coss 0 0 25 50 75 100 125 150
VDS - Drain-to-Source Voltage (V)
Qg - Total Gate Charge (nC)
Capacitance Document Number: 71702 S-80272-Rev. D, 11-Feb-08
Gate Charge www.vishay.com 3
SUM65N20-30
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 C, unless otherwise noted
3.0 VGS = 10 V ID = 30 A I S - Source Current (A) 100
2.5 rDS(on) - On-Resistance
2.0 (Normalized)
TJ = 150 C 10
TJ = 25 C
1.5
1.0
0.5
0.0 - 50
- 25
0
25
50
75
100
125
150
175
1 0
0.3
0.6
0.9
1.2
TJ - Junction Temperature (C)
VSD - Source-to-Drain Voltage (V)
On-Resistance vs. Junction Temperature
1000 240
Source-Drain Diode Forward Voltage
230 100 220 IAV (A) at TA = 25 C 10 V(BR)DSS (V) I Dav (A) ID = 1.0 mA
210
200 1 190 IAV (A) at TA = 150 C 0.1 0.00001 0.0001 0.001 tin (s) 0.01 0.1 1 180 - 50 - 25 0 25 50 75 100 125 150 175
TJ - Junction Temperature (C)
Avalanche Current vs. Time
Drain Source Breakdown vs. Junction Temperature
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Document Number: 71702 S-80272-Rev. D, 11-Feb-08
SUM65N20-30
Vishay Siliconix
THERMAL RATINGS
75 1000 rDS(on) Limited* 60 100 45 I D - Drain Current (A) I D - Drain Current (A) 10 s
100 s 10 1 ms 10 ms 100 ms DC
30
15
1
TC = 25 C Single Pulse
0 0 25 50 75 100 125 150 175
0.1 0.1
1
10
100
1000
TC - Ambient Temperature (C)
Maximum Avalanche and Drain Current vs. Case Temperature
VDS - Drain-to-Source Voltage (V) * VGS > minimum V GS at which rDS(on) is specified
Safe Operating Area
2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5
0.2 0.1 0.1 0.05 0.02 Single Pulse
0.01 10-4
10-3
10-2 Square Wave Pulse Duration (s)
10-1
1
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?71702.
Document Number: 71702 S-80272-Rev. D, 11-Feb-08
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Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 Revision: 18-Jul-08
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