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| TEMT3700 Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant FEATURES * * * * * * * * * * * * Package type: surface mount Package form: PLCC-2 Dimensions (L x W x H in mm): 3.5 x 2.8 x 1.75 High photo sensitivity High radiant sensitivity Suitable for visible and near infrared radiation Fast response times Angle of half sensitivity: = 60 Package notch indicates collector Package matched with IR emitter series VSML3710 Floor life: 1 year, MSL 2, acc. J-STD-020 Lead (Pb)-free component in accordance with RoHS 2002/95/EC and WEEE 2002/96/EC Photo interrupters Miniature switches Counters Encoders Position sensors Ligth sensors 94 8553 DESCRIPTION TEMT3700 is a high speed silicon NPN epitaxial planar phototransistor in a miniature PLCC-2 package for surface mounting on printed boards. The device is sensitive to visible and near infrared radiation. APPLICATIONS * * * * * * PRODUCT SUMMARY COMPONENT TEMT3700 Note Test conditions see table "Basic Characteristics" Ica (mA) 0.5 (deg) 60 0.1 (nm) 450 to 1080 ORDERING INFORMATION ORDERING CODE TEMT3700-GS08 TEMT3700-GS18 Note MOQ: minimum order quantity PACKAGING Tape and reel Tape and reel REMARKS MOQ: 7500 pcs, 1500 pcs/reel MOQ: 8000 pcs, 8000 pcs/reel PACKAGE FORM PLCC-2 PLCC-2 ABSOLUTE MAXIMUM RATINGS PARAMETER Collector emitter voltage Emitter collector voltage Collector current Collector peak current Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ambient Note Tamb = 25 C, unless otherwise specified TEST CONDITION SYMBOL VCEO VECO IC ICM PV Tj Tamb Tstg Tsd RthJA VALUE 70 5 50 100 100 100 - 40 to + 100 - 40 to + 100 260 400 UNIT V V mA mA mW C C C C K/W tp/T 0.1, tp 10 s Acc. reflow solder profile fig. 10 Soldered on PCB with pad dimensions: 4 mm x 4 mm Document Number: 81555 Rev. 1.7, 10-Oct-08 For technical questions, contact: detectortechsupport@vishay.com www.vishay.com 1 TEMT3700 Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant 125 PV - Power Dissipation Limit (mW) R thJA = 400 K/W 100 75 50 25 0 0 10 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature (C) 20376 Fig. 1 - Power Dissipation Limit vs. Ambient Temperature BASIC CHARACTERISTICS PARAMETER Collector emitter breakdown voltage Collector emitter dark current Collector emitter capacitance Collector ligth current Angle of half sensitivity Wavelength of peak sensitivity Range of spectral bandwidth Collector emitter saturation voltage Ee = 1 mW/cm2, = 950 nm, IC = 0.1 mA VS = 5 V, IC = 1 mA, = 950 nm, RL = 1 k VS = 5 V, IC = 1 mA, = 950 nm, RL = 100 VS = 5 V, IC = 2 mA, RL = 100 TEST CONDITION IC = 1 mA VCE = 20 V, E = 0 VCE = 5 V, f = 1 MHz, E = 0 Ee = 1 mW/cm2, = 950 nm, VCE = 5 V SYMBOL V(BR)CEO ICEO CCEO Ica p 0.1 0.5 VCEsat tr/tf tr/tf fc 0.25 MIN. 70 1 3 0.5 60 850 450 to 1080 620 to 980 0.15 6 2 180 0.3 200 TYP. MAX. UNIT V nA pF mA deg nm nm nm V s s kHz Rise time, fall time Cut-off frequency Note Tamb = 25 C, unless otherwise specified BASIC CHARACTERISTICS Tamb = 25 C, unless otherwise specified 104 ICEO - Collector Dark Current (nA) 2.0 103 VCE = 20 V 102 Ica rel - Relative Collector Current 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0 20 40 60 80 100 VCE = 5 V Ee = 1 mW/cm2 = 950 nm 101 10 94 8304 20 40 60 80 100 Tamb - Ambient Temperature (C) 94 8239 Tamb - Ambient Temperature (C) Fig. 2 - Collector Dark Current vs. Ambient Temperature Fig. 3 - Relative Collector Current vs. Ambient Temperature www.vishay.com 2 For technical questions, contact: detectortechsupport@vishay.com Document Number: 81555 Rev. 1.7, 10-Oct-08 TEMT3700 Silicon NPN Phototransistor, RoHS Compliant Vishay Semiconductors 10 Ica - Collector Light Current (mA) 8 ton/toff - Turn-on/Turn-off Time (s) 1 6 VCE = 5 V RL = 100 = 950 nm 0.1 V CE = 5 V = 950 nm 4 toff 2 ton 0 0 2 4 6 8 10 12 14 0.01 0.001 0.01 94 8316 0.1 1 10 E e - Irradiance (mW/cm) 94 8293 IC - Collector Current (mA) Fig. 4 - Collector Light Current vs. Irradiance Fig. 7 - Turn-on/Turn-off Time vs. Collector Current 10 S ()rel - Relative Spectral Sensitivity I ca - Collector Light Current (mA) 1.0 0.8 0.6 0.4 0.2 0 400 600 800 1000 - Wavelength (nm) = 950 nm 1 Ee = 1 mW/cm 0.5 mW/cm 0.2 mW/cm 0.1 0.1 94 8317 1 10 100 94 8348 VCE - Collector Emitter Voltage (V) Fig. 5 - Collector Light Current vs. Collector Emitter Voltage Fig. 8 - Relative Spectral Sensitivity vs. Wavelength CCEO - Collector Emitter Capacitance (pF) 10 f = 1 MHz Srel - Relative Sensitivity 8 0 10 20 30 - Angular Displacement 40 1.0 0.9 0.8 0.7 50 60 70 80 6 4 2 0 0.1 1 10 100 94 8318 0.6 0.4 0.2 0 94 8294 VCE - Collector Emitter Voltage (V) Fig. 6 - Collector Emitter Capacitance vs. Collector Emitter Voltage Fig. 9 - Relative Radiant Sensitivity vs. Angular Displacement Document Number: 81555 Rev. 1.7, 10-Oct-08 For technical questions, contact: detectortechsupport@vishay.com www.vishay.com 3 TEMT3700 Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant PACKAGE DIMENSIONS in millimeters Mounting Pad Layout 1.2 area covered with solder resist 2.6 (2.8) 4 1.6 (1.9) 20350 SOLDER PROFILE DRYPACK 300 max. 240 C ca. 230 C 948625 10 s 250 Devices are packed in moisture barrier bags (MBB) to prevent the products from moisture absorption during transportation and storage. Each bag contains a desiccant. Temperature (C) 200 215 C FLOOR LIFE Floor life (time between soldering and removing from MBB) must not exceed the time indicated on MBB label: Floor life: 1 year Conditions: Tamb < 30 C, RH < 60 % Moisture sensitivity level 2, acc. to J-STD-020. 150 100 50 2 K/s to 4 K/s Full Line: Typical Dotted: Process Limits max. 160 C 90 s to 120 s max 40 s Lead Temperature 0 0 50 100 150 200 250 DRYING In case of moisture absorption devices should be baked before soldering. Conditions see J-STD-020 or label. Devices taped on reel dry using recommended conditions 192 h at 40 C (+ 5 C), RH < 5 %. Time (s) Fig. 10 - Lead Tin (SnPb) Reflow Solder Profile 4 Document Number: 81555 Rev. 1.7, 10-Oct-08 www.vishay.com 4 For technical questions, contact: detectortechsupport@vishay.com TEMT3700 Silicon NPN Phototransistor, RoHS Compliant Vishay Semiconductors TAPE AND REEL PLCC-2 components are packed in antistatic blister tape (DIN IEC (CO) 564) for automatic component insertion. Cavities of blister tape are covered with adhesive tape. 4.5 3.5 Adhesive tape 120 10.0 9.0 2.5 1.5 Identification Label: Vishay type group tape code production code quantity 94 8670 13.00 12.75 63.5 60.5 Blister tape 180 178 14.4 max. 94 8665 Component cavity Fig. 14 - Dimensions of Reel-GS08 10.4 8.4 Fig. 11 - Blister Tape 3.5 3.1 2.2 2.0 120 5.75 5.25 3.6 3.4 1.85 1.65 4.5 3.5 4.0 3.6 8.3 7.7 2.5 1.5 Identification Label: Vishay type group tape code production code quantity 13.00 12.75 62.5 60.0 1.6 1.4 4.1 3.9 2.05 1.95 4.1 3.9 0.25 94 8668 Fig. 12 - Tape Dimensions in mm for PLCC-2 321 329 14.4 max. 18857 MISSING DEVICES A maximum of 0.5 % of the total number of components per reel may be missing, exclusively missing components at the beginning and at the end of the reel. A maximum of three consecutive components may be missing, provided this gap is followed by six consecutive components. De-reeling direction 94 8158 Fig. 15 - Dimensions of Reel-GS18 COVER TAPE REMOVAL FORCE The removal force lies between 0.1 N and 1.0 N at a removal speed of 5 mm/s. In order to prevent components from popping out of the blisters, the cover tape must be pulled off at an angle of 180 with regard to the feed direction. > 160 mm 40 empty compartments min. 75 empty compartments Tape leader Carrier leader Carrier trailer Fig. 13 - Beginning and End of Reel The tape leader is at least 160 mm and is followed by a carrier tape leader with at least 40 empty compartments. The tape leader may include the carrier tape as long as the cover tape is not connected to the carrier tape. The least component is followed by a carrier tape trailer with a least 75 empty compartments and sealed with cover tape. Document Number: 81555 Rev. 1.7, 10-Oct-08 For technical questions, contact: detectortechsupport@vishay.com www.vishay.com 5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
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