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| SMD Type Silicon Epitaxial Schottky Barrier Type 1SS372 Diodes Features Small package Low forward voltage : VF = 0.23V (typ.) @ IF=5mA 1 ANODE 3 CATHODE/ANOD 2 CATHODE Absolute Maximum Ratings Ta = 25 Parameter Maximum (Peak) reverse voltage Reverse voltage Average forward current Maximum (Peak) forward current Surge current (10ms) Power dissipation Junction temperature Storage temperature Operating Temperature Range *Unit Rating .Total Rating= Unit RatingX0.7 Symbol VRM VR IO IFM IFSM P Tj Tstg Topr Rating 15 10 100 * 200 * 1* 100 125 -55 to +125 -40 to 100 Unit V V mA mA A mW Electrical Characteristics Ta = 25 Parameter Symbol IF = 1mA Forward voltage VF IF = 5mA IF = 100mA Reverse current Total capacitance IR CT VR = 10V VR = 0, f = 1MHz 20 Testconditons Min Typ 0.18 0.23 0.35 0.30 0.50 20 40 iA pF V Max Unit Marking Marking N9 www.kexin.com.cn 1 |
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