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| SMD Type MOS Field Effect Transistor 2SJ601 TO-252 +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 +0.1 2.30-0.1 +0.8 0.50-0.7 IC MOSFET Features Low on-resistance RDS(on)1 = 31 m RDS(on)2 = 46m MAX. (VGS =-10 V, ID = -18 A) Unit: mm +0.2 9.70-0.2 +0.1 0.80-0.1 +0.28 1.50-0.1 +0.25 2.65-0.1 Built-in gate protection diode 2.3 +0.15 4.60-0.15 +0.15 0.50-0.15 Low Ciss: Ciss = 3300 pF TYP. 0.127 max +0.15 5.55-0.15 1 Gate 2 Drain 3 Source +0.1 0.60-0.1 Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current (DC) Drain current(pulse) * Power dissipation TC=25 TA=25 Channel temperature Storage temperature * PW 10 s, duty cycle 1% Symbol VDSS VGSS ID ID PD PD Tch Tstg Rating -60 20 36 120 65 1.0 150 -55 to +150 Unit V V A A W W 3.80 MAX. (VGS = -4.0 V, ID =-18 A) www.kexin.com.cn 1 SMD Type 2SJ601 Electrical Characteristics Ta = 25 Parameter Drain cut-off current Gate leakage current Gate to source cutoff voltage Forward transfer admittance Drain to source on-state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Symbol IDSS IGSS Testconditons VDS=-60V,VGS=0 VGS= 20V,VDS=0 1.5 10 2.0 30 25 32 3300 VDS=-10V,VGS=0,f=1MHZ 580 230 11 VGS(on)=-30V,ID=--18A ,VDD=-10V,RG=0 12 80 53 ID = -36A VDD= -48 V VGS =-10 V IF = -36A, VGS = 0 V IF = -36 A, VGS = 0 V di/dt = 100 A / s 63 10 16 1.0 52 108 Min Typ MOSFET IC Max -10 10 2.5 Unit A A V S VGS(off) VDS=-10V,ID=-1mA Yfs RDS(on) Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr VDS=-10V,ID=-18A VGS=-10V,ID=-18A VGS=-4.0V,ID=-18A 31 46 m m pF pF pF ns ns ns ns nC nC nC V ns nC 2 www.kexin.com.cn |
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