View FQH44N10_4270387.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

FQH44N10_F133
Octorber 2008
QFET
FQH44N10_F133
100V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.
(R)
Features
* * * * * * * 48A, 100V, RDS(on) = 0.039 @VGS = 10 V Low gate charge ( typical 48 nC) Low Crss ( typical 85 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175C maximum junction temperature rating
D
G GD S
TO-247
FQH Series
S
Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL
TC = 25C unless otherwise noted
Parameter Drain-Source Voltage - Continuous (TC = 25C) Drain Current - Continuous (TC = 100C) Drain Current - Pulsed
(Note 1)
FQH44N10_F133 100 48 34 192 25
(Note 2) (Note 1) (Note 1) (Note 3)
Units V A A A V mJ A mJ V/ns W W/C C C
Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25C)
530 48 18 6.0 180 1.2 -55 to +175 300
- Derate above 25C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8 from case for 5 seconds
Thermal Characteristics
Symbol RJC RCS RJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient Typ -0.24 -Max 0.83 -40 Units C/W C/W C/W
(c)2008 Fairchild Semiconductor Corporation
1
Rev. A, October 2008
FQH44N10_F133
Electrical Characteristics
Symbol Parameter
TC = 25C unless otherwise noted
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS BVDSS / TJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse VGS = 0 V, ID = 250 A ID = 250 A, Referenced to 25C VDS = 100 V, VGS = 0 V VDS = 80 V, TC = 150C VGS = 25 V, VDS = 0 V VGS = -25 V, VDS = 0 V 100 ------0.1 ------1 10 100 -100 V V/C A A nA nA
On Characteristics
VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance VDS = VGS, ID = 250 A VGS = 10 V, ID = 24 A VDS = 40 V, ID = 24 A
(Note 4)
2.0 ---
-0.03 31
4.0 0.039 --
V S
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz ---1400 425 85 1800 550 110 pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 80 V, ID = 43.5 A, VGS = 10 V
(Note 4, 5)
VDD = 50 V, ID = 43.5 A, RG = 25
(Note 4, 5)
--------
19 190 90 100 48 9.0 24
45 390 190 210 62 ---
ns ns ns ns nC nC nC
Drain-Source Diode Characteristics and Maximum Ratings
IS ISM VSD trr Qrr Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 48 A Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = 43.5 A, dIF / dt = 100 A/s
(Note 4)
------
---98 360
48 192 1.5 ---
A A V ns nC
Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 0.345mH, IAS = 48A, VDD = 25V, RG = 25 , Starting TJ = 25C 3. ISD 43.5A, di/dt 300A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating temperature
(c)2008 Fairchild Semiconductor Corporation
2
Rev. A, October 2008
FQH44N10_F133
Typical Characteristics
10
2
ID, Drain Current [A]
ID , Drain Current [A]
VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V Top :
10
2
10
1
175
10
1
25 10
0
-55
Notes : 1. VDS = 40V 2. 250 Pulse Test s
Notes : 1. 250 Pulse Test s 2. TC = 25
10 -1 10
0
10
0
10
1
10
-1
2
4
6
8
10
VDS, Drain-Source Voltage [V]
VGS , Gate-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
0.15
0.12 VGS = 10V VGS = 20V 0.06
IDR , Reverse Drain Current [A]
10
2
RDS(on) [], Drain-Source On-Resistance
0.09
10
1
10
0
0.03
Note : TJ = 25
175 10
-1
25
Notes : 1. VGS = 0V 2. 250 Pulse Test s
0.00
0
30
60
90
120
150
180
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
ID , Drain Current [A]
VSD , Source-Drain Voltage [V]
Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature
4000 3500 3000
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd
12
VGS, Gate-Source Voltage [V]
10
VDS = 50V VDS = 80V
Capacitance [pF]
2500 2000 1500 1000 500 0 -1 10
8
Ciss Coss
Notes : 1. VGS = 0 V 2. f = 1 MHz
6
4
Crss
2
Note : ID = 43.5A
10
0
10
1
0
0
10
20
30
40
50
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
(c)2008 Fairchild Semiconductor Corporation
3
Rev. A, October 2008
FQH44N10_F133
Typical Characteristics
(Continued)
1.2
3.0
BVDSS, (Normalized) Drain-Source Breakdown Voltage
1.1
RDS(ON), (Normalized) Drain-Source On-Resistance
2.5
2.0
1.0
1.5
1.0
0.9
Notes : 1. VGS = 0 V A 2. ID = 250
0.5
Notes : 1. VGS = 10 V 2. ID = 21.75 A
0.8 -100
-50
0
50
100
o
150
200
0.0 -100
-50
0
50
100
o
150
200
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 7. Breakdown Voltage Variation vs. Temperature
Figure 8. On-Resistance Variation vs. Temperature
50
10
3
Operation in This Area is Limited by R DS(on)
40
ID, Drain Current [A]
10
2
100 s 1 ms 10 ms
ID, Drain Current [A]
10 s
30
10
1
DC
20
10
0
Notes :
1. TC = 25 C 2. TJ = 175 C 3. Single Pulse
o o
10
10
-1
10
0
10
1
10
2
0 25
50
75
100
125
150
175
VDS, Drain-Source Voltage [V]
TC, Case Temperature [ ]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current vs. Case Temperature
10
0
ZJC(t), Thermal Response
D = 0 .5 0 .2
10
-1
0 .1 0 .0 5 0 .0 2 0 .0 1 s in g le p u ls e
N o te s : 1 . Z J C ( t) = 0 .8 3 /W M a x . 2 . D u t y F a c to r , D = t 1 / t 2 3 . T J M - T C = P D M * Z J C ( t)
PDM t1 t2
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
Figure 11. Transient Thermal Response Curve
(c)2008 Fairchild Semiconductor Corporation
4
Rev. A, October 2008
FQH44N10_F133
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
(c)2008 Fairchild Semiconductor Corporation
5
Rev. A, October 2008
FQH44N10_F133
Peak Diode Recovery dv/dt Test Circuit & Waveforms
(c)2008 Fairchild Semiconductor Corporation
6
Rev. A, October 2008
FQH44N10_F133
Package Dimensions
TO-247AB
Dimensions in Millimeters
(c)2008 Fairchild Semiconductor Corporation
7
Rev. A, October 2008
FQH44N10_F133
TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. Build it NowTM CorePLUSTM CorePOWERTM CROSSVOLTTM CTLTM Current Transfer LogicTM EcoSPARK(R) EfficentMaxTM EZSWITCHTM *
TM
(R)
Fairchild(R) Fairchild Semiconductor(R) FACT Quiet SeriesTM FACT(R) FAST(R) FastvCoreTM FlashWriter(R) * FPSTM F-PFSTM
tm
FRFET(R) Global Power ResourceSM Green FPSTM Green FPSTM e-SeriesTM GTOTM IntelliMAXTM ISOPLANARTM MegaBuckTM MICROCOUPLERTM MicroFETTM MicroPakTM MillerDriveTM MotionMaxTM Motion-SPMTM OPTOLOGIC(R) OPTOPLANAR(R)
(R)
tm
Programmable Active DroopTM QFET(R) QSTM Quiet SeriesTM RapidConfigureTM Saving our world, 1mW /W /kW at a timeTM SmartMaxTM SMART STARTTM SPM(R) STEALTHTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SupreMOSTM SyncFETTM (R) The Power Franchise(R)
TM
tm
TinyBoostTM TinyBuckTM TinyLogic(R) TINYOPTOTM TinyPowerTM TinyPWMTM TinyWireTM SerDesTM
PDP SPMTM Power-SPMTM PowerTrench(R) PowerXSTM
UHC(R) Ultra FRFETTM UniFETTM VCXTM VisualMaxTM XSTM
* EZSWITCHTM and FlashWriter(R) are trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Farichild's Anti-Counterfeiting Policy is also stated on our external website, www.fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Farichild strongly encourages customers to purchase Farichild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for handing and storage and provide access to Farichild's full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Farichild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Preliminary No Identification Needed Obsolete Product Status Formative / In Design First Production Full Production Not In Production Definition Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.
Rev. I37
(c)2008 Fairchild Semiconductor Corporation
8
Rev. A, October 2008

▲Up To Search▲

Price & Availability of FQH44N10

	To Download FQH44N10 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .