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| MITSUBISHI SEMICONDUCTOR . ation nge. pecific ct to cha bje final s not a its are su is is ic lim e: Th tr Notice parame Som P MIN RELI ARY M63830P/FP 4-UNIT 1.5A DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE PIN CONFIGURATION DESCRIPTION The M63830P/FP 4-channel sinkdriver, consists of 4 PNP and 8 NPN transistors connected to from four high current gain driver pairs. VCC OUTPUT1 O1 1 2 3 4 16 15 14 13 COM COMMON O4 OUTPUT4 IN4 INPUT4 GND FEATURES G High breakdown voltage (BVCEO 50V) G High-current driving (IC(max) = 1.5A) G 3V micro computer series compatible input G With clamping diodes G With input diode G Wide operating temperature range (Ta = -40 to +85C) INPUT1 IN1 GND 5 12 11 10 9 INPUT2 IN2 OUTPUT2 O2 VCC 6 7 8 IN3 INPUT3 O3 OUTPUT3 COM COMMON 16P4(P) Package type 16P2N-A(FP) APPLICATION Output for 3 voltage microcomputer series and interface with high voltage system. Relay and small printer driver, LED, or incandescent display digit driver. CIRCUIT DIAGRAM FUNCTION The M63830FP/P is transistor-array of high active level four units type which can do direct drive of 3 voltage microcomputer series. A resistor of 3.5k is connected between the input and the base of PNP transistors. A clamp diode for inductive load transient suppression is connected for the output pin (collector) and COM pin. The input diode is intended to prevent the flow of current from the input to the Vcc. Without this diode, the current flows from "H" input to the Vcc and the "L" input circuit is activated, in such a case where one of the inputs of the 4 circuit is "H" and the other are "L" to save power consumption. The diode is inserted to prevent such mis-operation. The outputs are capable of driving 1.5A and are rated for operation with output voltage up to 50V. VCC 22K INPUT 3.5K 760 5.5K 3K GND COM OUTPUT The four circuits share the COM and GND The diode, indicated with the dotted line, is parasitic, and cannot be used. Unit : ABSOLUTE MAXIMUM RATINGS Symbol VCC VCEO IC VI VR IF Pd Topr Tstg Parameter (Unless otherwise noted, Ta = -40 ~ +85C) Conditions Output, H Current per circuit output, L Supply voltage Collector-emitter voltage Collector current Input voltage Clamping diode reverse voltage Clamping diode forward current Power dissipation Operating temperature Storage temperature Pulse width 10ms, duty cycle 5% Pulse width 100ms, duty cycle 5% Ta = 25C, when mounted on board Ratings 7 -0.5 ~ +50 1.5 -0.5 ~ VCC 50 1.5 1.0 1.92(P)/1.00(FP) -40 ~ +85 -55 ~ +125 Unit V V A V V A W C C Sep. 2001 MITSUBISHI SEMICONDUCTOR . ation nge. pecific ct to cha bje final s not a its are su is is ic lim e: Th tr Notice parame Som P MIN RELI ARY M63830P/FP 4-UNIT 1.5A DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE RECOMMENDED OPERATING CONDITIONS Symbol VCC VO Supply voltage Output voltage (Unless otherwise noted, Ta = -40 ~ +85C) Parameter Limits min 2.7 0 typ 3.0 -- -- max 3.6 50 1.25 Unit V V IC Collector current (Current per 1 circuit when 4 circuits are coming on simultaneously) VCC = 3V, Duty Cycle P : no more than 5% FP : no more than 2% VCC = 3V, Duty Cycle P : no more than 15% FP : no more than 7% 0 A 0 VCC-0.5 0 -- -- -- 0.7 VCC VCC-2.2 V V VIH VIL "H" input voltage "L" input voltage ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = -40 ~ +85C) Symbol V (BR) CEO ICC Parameter Test conditions Limits min 50 -- -- -- -- -- -- -- 4000 typ -- 3.7 1.4 1.0 -0.22 -0.60 -- 1.5 30000 max -- 5.0 2.2 1.7 -0.6 -0.95 100 2.3 -- Unit V mA V mA A V -- Collector-emitter breakdown voltage ICEO = 100A Supply current (AN only Input) VCC = 3.6V, VI = 0.5V VCC = 2.7V, VI = 0.5V, IC = 1.25A VCE(sat) Collector-emitter saturation voltage VCC = 2.7V, VI = 0.5V, IC = 0.7A VI = VCC-2.2V II Input current VI = VCC-3.6V IR Clamping diode reverse current VR = 50V VF Clamping diode forward volltage IF = 1.25A, VCC open hFE DC amplification factor VCC = 2.7V, VCE = 2V, IC = 1A, Ta = 25C : Typical values are at Ta = 25C SWITCHING CHARACTERISTICS Symbol ton toff Parameter Turn-on time Turn-off time (Unless otherwise noted, Ta = 25C) Test conditions CL = 15pF (note 1) Limits min -- -- typ 190 5300 max -- -- Unit ns ns NOTE 1 TEST CIRCUIT INPUT VCC Measured device OPEN PG 50 OUTPUT VO TIMING DIAGRAM INPUT 50% 50% RL OUTPUT CL 50% 50% ton (1)Pulse generator (PG) characteristics : PRR=1kHz, tw = 10s, tr = 6ns, tf = 6ns, Zo = 50 VI = 0.5 ~ 2.7V (2)Input-output conditions : RL = 8.3, Vo = 10V, Vcc = 2.7V (3)Electrostatic capacity CL includes floating capacitance at connections and input capacitance at probes toff Sep. 2001 MITSUBISHI SEMICONDUCTOR . ation nge. pecific ct to cha bje final s not a its are su is is ic lim e: Th tr Notice parame Som P MIN RELI ARY M63830P/FP 4-UNIT 1.5A DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE TYPICAL CHARACTERISTICS Output Saturation Voltage Collector Current Characteristics 1.6 M63830P Vcc=2.7V VI=0.5V Thermal Derating Factor Characteristics 1.92 2.0 Power dissipation Pd(max) (W) 1.5 Collector current Ic (A) 1.2 1.0 M63830FP 0.998 0.8 Ta=85C 0.5 0.520 0.4 Ta=25C Ta=-40C 0 0 25 50 75 85 100 0 0 0.5 1.0 1.5 2.0 Ambient temperature Ta (C) Output saturation voltage VCE(sat) (V) Duty Cycle-Collector Characteristics (M63830P) 2.0 2.0 Duty Cycle-Collector Characteristics (M63830P) *The collector current values represent the current per circuit. *Repeated frequency 10Hz *The value the circle represents the value of the simultaneouslyoperated circuit. *Vcc = 3V *Ta = 85C Collector current Ic (A) Collector current Ic (A) 1.5 1.5 1.0 *The collector current values represent the current per circuit. *Repeated frequency 10Hz *The value the circle represents the value of the simultaneously-operated circuit. *Vcc = 3V *Ta = 25C 1 1.0 0.5 2 3 4 1 0.5 2 3 4 0 0 20 40 60 80 100 0 0 20 40 60 80 100 Duty cycle (%) Duty cycle (%) Duty Cycle-Collector Characteristics (M63830FP) 2.0 *The collector current values represent the current per circuit. *Repeated frequency 10Hz *The value the circle represents the value of the simultaneously-operated circuit. *Vcc = 3V *Ta = 25C Duty Cycle-Collector Characteristics (M63830FP) 2.0 *The collector current values represent the current per circuit. *Repeated frequency 10Hz *The value the circle represents the value of the simultaneously-operated circuit. *Vcc = 3V *Ta = 85C Collector current Ic (A) 1.5 Collector current Ic (A) 1.5 1.0 1.0 1 0.5 2 3 4 0.5 1 2 3 4 0 0 20 40 60 80 100 0 0 20 40 60 80 100 Duty cycle (%) Duty cycle (%) Sep. 2001 MITSUBISHI SEMICONDUCTOR . ation nge. pecific ct to cha bje final s not a its are su is is ic lim e: Th tr Notice parame Som P MIN RELI ARY M63830P/FP 4-UNIT 1.5A DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE DC Amplification Factor Collector Current Characteristics 105 7 VCC=2.7V 5 VCE=2V Grounded Emitter Transfer Characteristics 1.6 VCC=2.7V VCE=2V DC amplification factor hFE Collector current Ic (A) 3 2 Ta=85C 1.2 104 7 5 3 2 Ta=25C Ta=-40C 0.8 Ta=85C Ta=25C 103 7 5 3 2 0.4 Ta=-40C 102 1 10 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 Collector current IC (mA) 0 0 0.5 1.0 1.5 2.0 Input voltage Vcc-VI (V) Input Characteristics -0.6 VCC=3V Clamping Diode Characteristics 2.0 Forward bias current IF (A) -0.5 Input Current II (mA) 1.5 -0.4 -0.3 Ta=85C 1.0 Ta=25C -0.2 Ta=25C 0.5 Ta=85C Ta=-40C -0.1 Ta=-20C 0 0 1 2 3 0 0 0.5 1.0 1.5 2.0 Input voltage Vcc-VI (V) Forward bias voltage VF (V) Driver Supply Characteristics 20.0 VI=0.5V Supply Current Icc (mA) 16.0 Ta=25C 12.0 Ta=-40C 8.0 Ta=85C 4.0 0 0 2 4 6 8 10 Supply voltage Vcc (V) Sep. 2001 |
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