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| BL FEATURES GALAXY ELECTRICAL VOLTAGE RANGE: 45 V CURRENT: 0.1 A 1N60P SMALL SIGNAL SCHOTTKY DIODES Metal s illicon junction m ajority carrier conduction High current capability,Low forward voltage drop Extrem ely low revers e current IR Ultra s peed s witching characteris tics Sm all tem perature coefficient of forward ffffff characteris tics Satis factory wave detection efficiency For us e in RECORDER. TV. RADIO. TELEPHONE as detectors ,s uper high s peed s witching circuits , s m all current rectifier DO - 35(GLASS) MECHANICAL DATA Cas e:JEDEC DO--35,glas s cas e Polarity: Color band denotes cathode end Weight: Approx. 0.13 gram ABSOLUTE RATINGS(LIMITING VALUES) Parameters Repetitive peak reverse voltage Forw ard continuous current Peak f orw ard surge current (t=1s) Storage and junction temperature range Maximum lead temperature f or soldering during 10s at 4mm f rom case Symbols V RRM TA =25 IF IFSM TSTG/TJ TL Value 1N60P 45 50 500 XX- 55 ---- + 125 230 UNITS V mA mA ELECTRICAL CHARACTERISTICS Parameters Symbols Test Conditions I F=1m A Forw ard voltage Min. Value Typ. 0.24 0.65 0.5 6.0 60.0 Max. 0.5 UNITS VF I F =200m A 1.0 1.0 V Reverse current Junction capacitance Detection ef f iciency (See FIG. 4) Reverse recovery time Thermal resistance junction to ambient IR CJ VR=15V VR=10V f=1MHz Vl=3V f=30MHz CL=10pF RL=3.8K A pF % t rr R JA I F=IR =1m A Irr=1m A R C=100 400 1.0 ns /W www.galaxycn.com Document Number 0265007 BLGALAXY ELECTRICAL 1. RATINGS AND CHARACTERISTIC CURVES 1N60P FIG.1 -- FORWARD CURRENT VERSUS FORWARD VOLTAGE (TYPICAL VALUES) FIG.2 -- REVERSE CURRENT VERSUS CONTINUOUS REVERSE VOLTAGE mA 500 450 A 0.70 0.60 IR 0.50 0.40 0.30 0.20 0.10 0 0.2 0.4 0.6 0.8 1.0 V IF 400 350 300 250 200 150 100 50 0 0 VF 0 5 10 15 VR 20 25 30 V FIG.3 -- JUNCTION CAPACITANCE VERSUS CONTINUOUS REVERSE APPLIED VOLTAGE FIG.4 -- DETECTION EFFICIENCY MEASUREMENT CIRCUIT D.U.T output Input:3VRMS CL 10PF RL 3.8K www.galaxycn.com Document Number 0265007 BLGALAXY ELECTRICAL 2. |
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