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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU931ZPFI DESCRIPTION *High Voltage *DARLINGTON *Integrated High Voltage Zener APPLICATIONS *Application in high performance electronic car ignition ABSOLUTE MAXIMUM RATINGS (Ta=25) SYMBOL VCBO VCER VCES VCEO VEBO IC IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage (RBE=100) Collector-Emitter Voltage (VBE=0) Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation @TC=25 Junction Temperature Storage Temperature Range VALUE 350 350 350 350 5 20 5 60 150 -40~150 UNIT V V V V V A A W PC Tj Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case MAX 2.08 UNIT /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS IC= 100mA; IB= 0 IC= 100mA; IB= 0; TJ=125 IC= 7A; IB= 70mA B BU931ZPFI MIN 350 350 TYP. MAX 500 500 1.6 UNIT VCL Clamping Voltage V VCE(sat)-1 Collector-Emitter Saturation Voltage V V CE(sat)-2 Collector-Emitter Saturation Voltage IC= 8 A; IB= 100mA 1.8 V V CE(sat)-3 VBE(sat)-1 Collector-Emitter Saturation Voltage IC= 10 A; IB= 150mA B 2 V Base-Emitter Saturation Voltage IC= 8 A; IB= 100mA 2.2 V V BE(sat)-2 Base-Emitter Saturation Voltage IC= 10A; IB= 250mA 2.5 V V BE(on)-1 Base-Emitter On Voltage IC= 5A ; VCE= 2V 1.67 V V BE(on)-2 Base-Emitter On Voltage IC= 10A ; VCE= 2V 2 V ICE(off) ICL IEBO Collector Cutoff Current VCC= 16V;VBE= 300mV;TJ= 125 VCE= 350V;IB= 0 VEB= 5V; IC= 0 0.5 mA Clamping Current 0.25 mA Emitter Cutoff Current 50 mA hFE DC Current Gain IC= 5A ; VCE= 2V 300 VECF C-E Diode Forward Voltage IF= 10A 2.5 V isc Websitewww.iscsemi.cn |
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