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 Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION With TO-126 package High voltage ,high speed APPLICATIONS Particularly suited for 115V and 220V switchmode applications such as switching regulators,inverters ,motor controls,solenoid/ relay drivers and deflection circuits
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION
MJE13003
Absolute maximum ratings (Tc=25ae )
SYMBOL VCBO VCEO VEBO IC ICM IB IBM IE IEM PD Tj Tstg
IN
Collector-base voltage
Collector-emitter voltage

PARAMETER
Emitter-base voltage
Collector current (DC)
Collector current-Peak
CHA
E SEM NG
Open base
Open emitter
Open collector
OND IC
CONDITIONS
TOR UC
VALUE 700 400 9 1.5 3 0.75 1.5 2.25 4.5
UNIT V V V A A A A A A W
Base current Base current-Peak
Emitter current Emitter current-Peak Ta=25ae Total power dissipation TC=25ae Junction temperature Storage temperature
1.4 40 150 -65~150 ae ae
THERMAL CHARACTERISTICS
SYMBOL Rth j-C PARAMETER Thermal resistance from junction to case MAX 3.12 UNIT ae /W
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25ae unles otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=10mA ;IB=0 IC=0.5A; IB=0.1A IC=1A; IB=0.25A TC=100ae IC=1.5A;IB=0.5A IC=0.5A; IB=0.1A IC=1A; IB=0.25A TC=100ae VCEV=Rated value; VBE (off) =1.5V TC=100ae VEB=9V; IC=0 IC=0.5A ; VCE=2V IC=1A ; VCE=2V MIN 400
MJE13003
SYMBOL VCEO(SUS) VCEsat-1 VCEsat-2 VCEsat-3 VBEsat-1 VBEsat-2 ICEV IEBO hFE-1 hFE-2 fT COB
TYP.
MAX
UNIT V
0.5 1.0 1.0 3.0 1.0 1.2 1.1 1.0 5.0
V V V V V mA mA
DC current gain

Switching times resistive load td tr ts tf Delay time Rise time Storage time Fall time
CHA IN
Transition frequency
Collector outoput capacitance
E SEM NG
IC=0.1A ; VCE=10V;f=1MHz IE=0;f=0.1MHz ; VCB=10V
OND IC
TOR UC
8 40 5 25 4 21
1.0
MHz pF
0.05 VCC=125V ,IC=1A IB1=-IB2=0.2A tp=25|I s duty cycleU 1% 0.5 2.0 0.4
0.1 1.0 4.0 0.7 |I
|I |I |I
s s s s
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
MJE13003

CHA IN
E SEM NG
OND IC
TOR UC
Fig.2 Outline dimensions
3
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
MJE13003

CHA IN
E SEM NG
OND IC
TOR UC
4
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
MJE13003

CHA IN
E SEM NG
OND IC
TOR UC
5


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