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| Semiconductor STK38X60LM Advanced Power MOSFET SWITCHING REGULATOR APPLICATIONS Features * * * * High Voltage: BVDSS=600V(Min.) Low Crss : Crss=4.3pF(Typ.) Low gate charge : Qg=4.5nC(Typ.) Low RDS(on) :RDS(on)=9.3(Typ.) Type NO. STK38X60LM Marking STK38X60 Package Code MPT Ordering Information Outline Dimensions 7.30~7.50 unit : mm 1.20 Max. 1.70 Typ. 0.70 Max. 13.05~13.85 2.50 Typ. 0.60 Max. 2.50 Typ. 1 2 3 0.60 Max. 8.40~8.60 3.30~3.50 1.95~2.05 PIN Connections 1. Gate 2. Drain 3. Source KSD-T0H011-001 1 STK38X60LM Absolute maximum ratings Characteristic Drain-source voltage Gate-source voltage Drain current (DC) Drain current (Pulsed) * (Ta=25C) Symbol VDSS VGSS ID IDP PD IAS EAS IAR EAR TJ Tstg Rating 600 30 0.38 1.6 1.3 0.4 1.7 0.4 50 150 -55~150 Unit V V A A W A mJ A J Drain Power dissipation Avalanche current (Single) Single pulsed avalanche energy Avalanche current (Repetitive) Repetitive avalanche energy Junction temperature Storage temperature range * Limited by maximum junction temperature C Characteristic Thermal resistance Symbol Rth(J-a) Typ. - Max 96.2 Unit C/W Junction-ambient KSD-T0H011-001 2 STK38X60LM Electrical Characteristics Characteristic Drain-source breakdown voltage Gate-threshold voltage Drain-source leakage current Gate-source leakage Drain-Source on-resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge (Ta=25C) Symbol BVDSS VGS(th) IDSS IGSS RDS(ON) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Test Condition ID=250A, VGS=0 ID=250A, VDS= VGS VDS=600V, VGS=0V VDS=0V, VGS=30V VGS=10V, ID=0.19A VDS=10V, ID=0.19A VGS=0V, VDS=25V, f=1MHz Min. 600 3.0 - Typ. 9.3 0.95 150 20 4.3 22.5 27 11.5 27 4.5 0.9 1.3 Max. 5.0 1 100 11.5 225 30 6.4 6.7 1.3 1.9 Unit V V A nA S pF VDD=300V, VGS=10V ID=0.38A, RG=25 - - ns VDD=300V, VGS=10V ID=0.38A - nC - Source-Drain Diode Ratings and Characteristics Characteristic Continuous source current Source current (Pulsed) Forward voltage Reverse recovery time Reverse recovery charge (Ta=25C) Symbol IS ISM VSD trr Qrr Test Condition Integral reverse diode in the MOSFET VGS=0V, IS=0.19A Is=0.38A, VGS=0V dis/dt=100A/us Min - Typ 160 0.59 Max 0.4 1.6 1.4 - Unit A V ns uC Note ; Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature L=20mH, IAS=0.38A, VDD=50V, RG=25 Pulse Test : Pulse Width 300us, Duty cycle 2% Essentially independent of operating temperature KSD-T0H011-001 3 STK38X60LM Electrical Characteristic Curves Fig. 1 ID - VDS Fig. 2 ID - VGS : - Fig. 3 RDS(on) - ID Fig. 4 IS - VSD Fig. 5 Capacitance - VDS Fig. 6 VGS - QG KSD-T0H011-001 4 STK38X60LM Fig. 7 VDSS - TJ Fig. 8 RDS(on) - TJ C C Fig. 9 ID - Ta Fig. 10 Safe Operating Area * KSD-T0H011-001 5 STK38X60LM Fig. 11 Gate Charge Test Circuit & Waveform Fig. 12 Resistive Switching Test Circuit & Waveform Fig. 13 EAS Test Circuit & Waveform KSD-T0H011-001 6 STK38X60LM Fig. 14 Diode Reverse Recovery Time Test Circuit & Waveform KSD-T0H011-001 7 STK38X60LM The AUK Corp. products are intended for the use as components in general electronic equipment (Office and communication equipment, measuring equipment, home appliance, etc.). Please make sure that you consult with us before you use these AUK Corp. products in equipments which require high quality and / or reliability, and in equipments which could have major impact to the welfare of human life(atomic energy control, airplane, spaceship, transportation, combustion control, all types of safety device, etc.). AUK Corp. cannot accept liability to any damage which may occur in case these AUK Corp. products were used in the mentioned equipments without prior consultation with AUK Corp.. Specifications mentioned in this publication are subject to change without notice. KSD-T0H011-001 8 |
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