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| Features * Supply Voltage 5V (Typically) * Very Low Power Consumption: 150 mW (Typically) for -1 dBm Output Level * Very Good Sideband Suppression by Means of Duty Cycle Regeneration of the LO * * * * * * Input Signal Phase Control Loop for Precise 90 Phase Shifting Power-down Mode Low LO Input Level: -10 dBm (Typically) 50- Single-ended LO and RF Port LO Frequency from 100 MHz to 1 GHz SO16 Package Benefits * No External Components Required for Phase Shifting * Adjustment Free, Hence Saves Manufacturing Time * Only Three External Components Necessary, this Results in Cost and Board Space Saving 1000-MHz Quadrature Modulator U2790B Electrostatic sensitive device. Observe precautions for handling. 1. Description The U2790B is a 1000-MHz quadrature modulator using Atmel(R)'s advanced UHF process. It features a frequency range from 100 MHz up to 1000 MHz, low current consumption, and single-ended RF and LO ports. Adjustment-free application makes the direct converter suitable for all digital radio systems up to 1000 MHz, e.g., GSM, ADC, JDC. Figure 1-1. Block Diagram SPU BBAI BBAI 8 7 6 Power up PU 1 VS 5,4 LO i Phadj BBBi BBBI 12 15 16 9 10 Duty cycle regenerator Frequency doubler 0 90 90/control loop 3 RFO 2,11,13,14 GND 4583D-CELL-07/06 2. Pin Configuration Figure 2-1. Pinning SO16 PU GND RFO VS VS SPD BBAi BBAi 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 Phadj Phadj GND GND LOi GND BBBi BBBi Table 2-1. Pin 1 2, 11, 13, 14 3 4, 5 6 7 8 9 10 12 15, 16 Pin Description Symbol PU GND RFo VS SPU BBAi BBAi BBBi BBBi LOi Phadj Function Power-up input Ground RF output Supply voltage Settling time power-up Baseband input A Baseband input A inverse Baseband input B Baseband input B inverse LO input Phase adjustment (not necessary for regular applications) 2 U2790B 4583D-CELL-07/06 U2790B 3. Absolute Maximum Ratings Parameters Supply voltage Input voltage Junction temperature Storage temperature range Symbol VS Vi Tj TStg Value 6 0 to VS 125 -55 to +125 Unit V V C C 4. Operating Range Parameters Supply voltage range Ambient temperature range Symbol VS Tamb Value 4.5 to 5.5 -40 to +85 Unit V C 5. Thermal Resistance Parameters Junction ambient SO16 Symbol RthJA Value 110 Unit K/W 6. Electrical Characteristics Test conditions (unless otherwise specified): VS = 5V, Tamb = 25C, referred to test circuit, system impedance ZO = 50, fLO = 900 MHz, PLO = -10 dBm, VBBi = 1 Vpp differential. No. Parameters Supply voltage range Supply current Baseband Inputs Input-voltage range (differential) Input impedance (single ended) Input-frequency range(5) Internal bias voltage Temperature coefficient Test Conditions Pin 4, 5 4, 5 7-8, 9-10 Symbol VS IS Min. 4.5 24 Typ. 30 Max. 5.5 37 Unit V mA Type* A A 1.1 1.2 2 2.1 2.2 2.3 2.4 2.5 VBBi ZBBi fBBi VBBb TCBB 0 2.35 1000 3.2 1500 mVpp k D D D A D 250 2.5 0.1 2.65 <1 MHz V mV/C *) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter Notes: 1. The required LO level is a function of the LO frequency. 2. In reference to an RF output level -1 dBm and I/Q input level of 400 mVpp differential. 3. Sideband suppression is tested without connection at pins 15 and 16. For higher requirements a potentiometer can be connected at these pins. 4. For Tamb = -30C to +85C and VS = 4.5V to 5.5V. 5. By low impedance signal source. 3 4583D-CELL-07/06 6. Electrical Characteristics (Continued) Test conditions (unless otherwise specified): VS = 5V, Tamb = 25C, referred to test circuit, system impedance ZO = 50, fLO = 900 MHz, PLO = -10 dBm, VBBi = 1 Vpp differential. No. Parameters LO Input Frequency range Input level(1) Input impedance Voltage standing wave ratio Duty cycle range RF Output Output level LO suppression(2) Sideband suppression(2, 3) Phase error(4) Amplitude error Noise floor VSWR 3rd-order baseband harmonic suppression RF harmonic suppression Power-up Mode Supply current Test Conditions Pin 12 Symbol fLOi PLOi ZiLO VSWRLO DCRLO Min. 50 -12 Typ. Max. 1000 Unit MHz dBm Type* D D D D D 3 3.1 3.2 3.3 3.4 3.5 4 4.1 4.2 4.3 4.4 4.5 4.6 4.7 4.8 -10 50 1.4 -5 2 0.6 0.4 -5 30 32 35 30 -1 35 35 40 35 <1 < 0.25 -132 -144 1.6 35 45 3 fLO = 900 MHz fLO = 150 MHz fLO = 900 MHz fLO = 150 MHz PRFo LORFo SBSRFo Pe Ae +2 dBm dB dB deg. dB dBm/Hz B B B D D D D VBBi = 2V, VBBi = 3V VBBi = VBBi = 2.5V NFL VSWRRF SBBH SRFH 2 dB D 4.9 5 5.1 35 dB D VPU 0.5V VPU = 1V CSPU = 100 pF CLO = 100 pF CRFo = 1 nF 4, 5 IPU tsPU 10 1 A D 5.2 6 6.1 6.2 Notes: Settling time Switching Voltage Power-on Power-up 6 to 3 10 s D 1 1 VPUon VPUdown 4 1 V V D D *) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter 1. The required LO level is a function of the LO frequency. 2. In reference to an RF output level -1 dBm and I/Q input level of 400 mVpp differential. 3. Sideband suppression is tested without connection at pins 15 and 16. For higher requirements a potentiometer can be connected at these pins. 4. For Tamb = -30C to +85C and VS = 4.5V to 5.5V. 5. By low impedance signal source. 4 U2790B 4583D-CELL-07/06 U2790B 7. Diagrams Figure 7-1. Typical Single Sideband Output Spectrum at VS = 4.5V and VS = 5.5V, fLO = 900 MHz, PLO = -10 dBm, VBBI = 1 VPP (differential) Tamb = 25C Figure 7-2. Typical GMSK Output Spectrum 5 4583D-CELL-07/06 Figure 7-3. Demo Board Layout Figure 7-4. OIP3 versus Tamb, LO = 150 MHz, Level -20 dBm 16 12 IP3 (dBm) VBBI = 0.2 VPP 8 VBBi= 0.4 VPP 4 0 -40 -20 0 20 40 60 80 100 Temperature (C) 6 U2790B 4583D-CELL-07/06 U2790B Figure 7-5. OIP3 versus Tamb, LO = 900 MHz, Level -10 dBm 12 10 VBBi = 0.4 VPP IP3 (dBm) 8 6 VBBi = 1.0 VPP 4 2 0 -40 -20 0 20 40 60 80 100 Temperature (C) Figure 7-6. Output Power versus Tamb 0.5 0 Output Power (dBm) -0,5 -1 -1.5 -2 -2.5 -40 -20 0 20 FLO = 150 MHz FLO = 900 MHz 40 60 80 100 Temperature (C) Figure 7-7. Supply Current versus Tamb 40 Supply Current (mA) 30 20 10 0 -40 -20 0 20 40 60 80 100 Temperature (C) 7 4583D-CELL-07/06 Figure 7-8. Typical S11 Frequency Response of the RF Output Figure 7-9. Typical VSWR Frequency Response of the RF Output 8 U2790B 4583D-CELL-07/06 U2790B Figure 7-10. Typical S11 Frequency Response of the LO Input Figure 7-11. Typical VSWR Frequency Response of the LO input 10 8 VSWR 6 4 2 0 100 LO Frequency (MHz) 1000 9 4583D-CELL-07/06 Figure 7-12. Typical Supply Current versus Temperature at VS = 5V 60 Supply Current ( mA ) 50 40 30 20 10 -40 -20 0 20 40 60 80 100 Temperature (C) Figure 7-13. Typical Output Power versus LO-Frequency at Tamb = 25C, VBBI = 230 mVPP (differential) 0 Output Power ( dBm ) -5 0 200 400 600 800 1000 1200 1400 LO Frequency ( MHz ) Figure 7-14. Typical required VBBi Input Signal (differential) versus LO Frequency for PO = 0 dBm and PO = -2 dBm 2 VBBi (differential) (VPP) 1 0 0 200 400 600 800 1000 1200 1400 LO Frequency (MHz) 10 U2790B 4583D-CELL-07/06 U2790B Figure 7-15. Typical useful LO Power Range versus LO Frequency at Tamb = 25 C 0 -10 LO Power (dBm) -20 -30 -40 -50 0 200 400 600 800 1000 1200 1400 LO Frequency (MHz) Figure 7-16. Application Circuit CPU A inv 220n 8 6 1 SPU PU 1n Power down A 220n BBAi BBAi 7 Power down 5,4 VS 1n VS 100n Baseband LO processing VS B 100p 10k LOi Phadj BBBi BBBi 220n 12 15 16 9 10 Duty cycle regenerator Frequency doubler 0 90 90/ control loop 3 OUT RFO 220n 2,11,13,14 Binv GND 11 4583D-CELL-07/06 Figure 7-17. Demo Board Layout 12 U2790B 4583D-CELL-07/06 U2790B 8. Application Notes 8.1 Noise Floor and Settling Time In order to reduce noise on the power-up control input and improve the wide-off noise floor of the 900-MHz RF output signal, capacitor CPU should be connected from pin 6 to ground in the shortest possible way. The settling time has to be considered for the system under design. For GSM applications, a value of CPU = 1 nF defines a settling time, tsPU, equal or less than 3 ms. This capacitance does not have any influence on the noise floor within the relevant GSM mask. For mobile applications the mask requirements can be achieved very easily without CPU. A significant improvement of the wide-off noise floor is obtainable with CPU greater than 100 nF. Such values are recommended for applications where the settling time is not critical such as in base stations. Coupling capacitors for LOi and RFO also have a certain impact on the settling time. The values used for the measurements are CLOi = 100 pF and CRFo = 1 nF. 8.2 Baseband Coupling The U2790B-FP (SO16) has an integrated biasing network which allows AC coupling of the baseband signal at a low count of external components. The bias voltage is 2.5V 0.15V. Figure 7-17 shows the baseband input circuitry with a resistance of 3.2 k for each asymmetric input. The internal DC offset between A and A, and B and B is typically < 1 mV with a maximum of 3 mV. DC coupling is also possible with an external DC voltage of 2.5 0.15V. Figure 8-1. Baseband Input Circuitry Mixer input stage 3.2 k A , B A , B 13 4583D-CELL-07/06 RF Output Circuitry LO Input Circuitry VS RFO 20 3 Figure 8-2. LO Input Circuitry LO 12 50 20 pF 14 U2790B 4583D-CELL-07/06 U2790B 9. Ordering Information Extended Type Number U2790B-NFPH U2790B-NFPG3H Package SO16 SO16 Remarks Tube, Pb-free Taped and reeled, Pb-free 10. Package Information Package SO16 Dimensions in mm 10.0 9.85 5.2 4.8 3.7 1.4 0.4 1.27 8.89 16 9 0.25 0.10 0.2 3.8 6.15 5.85 technical drawings according to DIN specifications 1 8 11. Revision History Please note that the following page numbers referred to in this section refer to the specific revision mentioned, not to this document. Revision No. 4583D-CELL-07/06 History * Page 3, Abs. Max.Ratings table: Storage temperature values changed * Page 2, Pin Description table: symbol of Pins 8 and 10 changed * Put datasheet in a new template 15 4583D-CELL-07/06 Atmel Corporation 2325 Orchard Parkway San Jose, CA 95131, USA Tel: 1(408) 441-0311 Fax: 1(408) 487-2600 Atmel Operations Memory 2325 Orchard Parkway San Jose, CA 95131, USA Tel: 1(408) 441-0311 Fax: 1(408) 436-4314 RF/Automotive Theresienstrasse 2 Postfach 3535 74025 Heilbronn, Germany Tel: (49) 71-31-67-0 Fax: (49) 71-31-67-2340 1150 East Cheyenne Mtn. Blvd. Colorado Springs, CO 80906, USA Tel: 1(719) 576-3300 Fax: 1(719) 540-1759 Regional Headquarters Europe Atmel Sarl Route des Arsenaux 41 Case Postale 80 CH-1705 Fribourg Switzerland Tel: (41) 26-426-5555 Fax: (41) 26-426-5500 Microcontrollers 2325 Orchard Parkway San Jose, CA 95131, USA Tel: 1(408) 441-0311 Fax: 1(408) 436-4314 La Chantrerie BP 70602 44306 Nantes Cedex 3, France Tel: (33) 2-40-18-18-18 Fax: (33) 2-40-18-19-60 Biometrics/Imaging/Hi-Rel MPU/ High-Speed Converters/RF Datacom Avenue de Rochepleine BP 123 38521 Saint-Egreve Cedex, France Tel: (33) 4-76-58-30-00 Fax: (33) 4-76-58-34-80 Asia Room 1219 Chinachem Golden Plaza 77 Mody Road Tsimshatsui East Kowloon Hong Kong Tel: (852) 2721-9778 Fax: (852) 2722-1369 ASIC/ASSP/Smart Cards Zone Industrielle 13106 Rousset Cedex, France Tel: (33) 4-42-53-60-00 Fax: (33) 4-42-53-60-01 1150 East Cheyenne Mtn. Blvd. Colorado Springs, CO 80906, USA Tel: 1(719) 576-3300 Fax: 1(719) 540-1759 Scottish Enterprise Technology Park Maxwell Building East Kilbride G75 0QR, Scotland Tel: (44) 1355-803-000 Fax: (44) 1355-242-743 Japan 9F, Tonetsu Shinkawa Bldg. 1-24-8 Shinkawa Chuo-ku, Tokyo 104-0033 Japan Tel: (81) 3-3523-3551 Fax: (81) 3-3523-7581 Literature Requests www.atmel.com/literature Disclaimer: The information in this document is provided in connection with Atmel products. No license, express or implied, by estoppel or otherwise, to any intellectual property right is granted by this document or in connection with the sale of Atmel products. EXCEPT AS SET FORTH IN ATMEL'S TERMS AND CONDITIONS OF SALE LOCATED ON ATMEL'S WEB SITE, ATMEL ASSUMES NO LIABILITY WHATSOEVER AND DISCLAIMS ANY EXPRESS, IMPLIED OR STATUTORY WARRANTY RELATING TO ITS PRODUCTS INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTY OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE, OR NON-INFRINGEMENT. IN NO EVENT SHALL ATMEL BE LIABLE FOR ANY DIRECT, INDIRECT, CONSEQUENTIAL, PUNITIVE, SPECIAL OR INCIDENTAL DAMAGES (INCLUDING, WITHOUT LIMITATION, DAMAGES FOR LOSS OF PROFITS, BUSINESS INTERRUPTION, OR LOSS OF INFORMATION) ARISING OUT OF THE USE OR INABILITY TO USE THIS DOCUMENT, EVEN IF ATMEL HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES. Atmel makes no representations or warranties with respect to the accuracy or completeness of the contents of this document and reserves the right to make changes to specifications and product descriptions at any time without notice. Atmel does not make any commitment to update the information contained herein. Unless specifically provided otherwise, Atmel products are not suitable for, and shall not be used in, automotive applications. Atmel's products are not intended, authorized, or warranted for use as components in applications intended to support or sustain life. (c) 2006 Atmel Corporation. All rights reserved. Atmel (R), logo and combinations thereof, Everywhere You Are(R) and others are registered trademarks or trademarks of Atmel Corporation or its subsidiaries. Other terms and product names may be trademarks of others. 4583D-CELL-07/06 |
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