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Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1106 DESCRIPTION *With TO-3PN package *High frequency *Complement to type 2SC2581 APPLICATIONS *Audio power amplifer applications *DC-DC converters PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Ta=) SYMBOL VCBO VCEO VEBO IC IB B PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base CONDITIONS VALUE -140 -140 -6 -10 -4 100 150 -55~150 UNIT V V V A A W Open collector PC Tj Tstg Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SA1106 MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-25mA ;IB=0 -140 V VCE(sat( Collector-emitter saturation voltage IC=-5A; IB=-0.5A -2.0 V ICBO Collector cut-off current VCB=-140V; IE=0 -100 A IEBO Emitter cut-off current VEB=-6V; IC=0 -100 A hFE DC current gain IC=-3A ; VCE=4V 30 fT Transition frequency IE=0.5A ; VCE=-12V 20 MHz Switching times tr Rise time IC=-5A;RL=12 IB1=- IB2=-0.5A VCC=60V 0.3 s ts Storage time 0.9 s tf Fall time 0.2 s 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1106 Fig.2 outline dimensions (unindicated tolerance:0.1mm) 3 |
Price & Availability of 2SA1106
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