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| INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SA1452 DESCRIPTION *Low Collector Saturation Voltage: VCE(sat)= -0.4V(Max)@IC= -6A *Good Linearity of hFE *High Switching Speed *Complement to Type 2SC3710 APPLICATIONS *Designed for high current switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -12 A IB B Base Current-Continuous -2 A PC Collector Power Dissipation @ TC=25 30 W TJ Junction Temperature 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL V(BR)CEO VCE(sat) VBE(sat) ICBO IEBO hFE-1 hFE-2 COB fT PARAMETER Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Output Capacitance Current-Gain--Bandwidth Product CONDITIONS IC= -50mA ; IB= 0 IC= -6A; IB= -0.3A B 2SA1452 MIN -80 TYP. MAX UNIT V -0.4 -1.2 -10 -10 70 40 400 50 240 V V A A IC= -6A; IB= -0.3A B VCB= -80V ; IE= 0 VEB= -6V ; IC= 0 IC= -1A ; VCE= -1V IC= -6A ; VCE= -1V IE= 0; VCB= -10V;ftest= 1MHz IC= -1A; VCE= -5V pF MHz Switching Times ton tstg tf Turn-on Time Storage Time Fall Time IC= -6A ,IB1= -IB2= -0.3A, VCC= -30V, RL= 5 0.3 1.0 0.5 s s s hFE-1 Classifications O 70-140 P 120-240 isc Websitewww.iscsemi.cn 2 |
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