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Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3214 DESCRIPTION With TO-3 package High voltage ,high speed APPLICATIONS For switching regulator and DC/DC converter applications PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg Collector-base voltage PARAMETER Collector-emitter voltage INC Emitter-base voltage Collector current E SEM ANG H Open base TC=25ae Open emitter OND IC CONDITIONS TOR UC VALUE 1200 800 7 5 8 3 80 200 -65~200 UNIT V V V A A A W ae ae Open collector Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature THERMAL CHARACTERISTICS SYMBOL Rth j-mb PARAMETER Thermal resistance from junction to mounting base VALUE 1.0 UNIT ae /W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN 2SC3214 SYMBOL TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=10mA ; IB=0 800 V V(BR)CBO Collector-base breakdown voltage IC=1mA ; IE=0 1200 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ; IC=0 7 V VCEsat Collector-emitter saturation voltage IC=2.5A; IB=0.5A 1.0 V VBEsat Base-emitter saturation voltage IC=2.5A; IB=0.5A 1.5 V ICBO Collector cut-off current VCB=960V; IE=0 10 |I A IEBO Emitter cut-off current VEB=5V; IC=0 hFE DC current gain IC=1.5A ; VCE=5V CHA IN E SEM NG OND IC 10 TOR UC 10 |I A 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3214 CHA IN E SEM NG OND IC TOR UC Fig.2 Outline dimensions 3 |
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