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EVALZ NTE4973 STUN56I SFBFY77 7C144 TR711 LS4D28 B520C
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  Datasheet File OCR Text:
 SMD Type
Silicon NPN Epitaxial Planar Type 2SC4782
SOT-23
+0.1 2.9-0.1 +0.1 0.4-0.1
Transistors IC
Unit: mm
High-speed switching.
+0.1 2.4-0.1
Low collector to emitter saturation voltage VCE(sat). Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.
+0.1 1.3-0.1
1
+0.1 0.95-0.1 +0.1 1.9-0.1
2
0.55
0.4
Features
3
+0.05 0.1-0.01
+0.1 0.97-0.1
1.Base 2.Emitter 3.collector
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Rating 25 20 5 300 200 200 150 -55 to +150 Unit V V V mA mA mW
+0.1 0.38-0.1
0-0.1
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1
SMD Type
2SC4782
Electrical Characteristics Ta = 25
Parameter Collector cutoff current Emitter cutoff current Forward current transfer ratio Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Reverse transfer capacitance Turn-on time Turn-off time Storage time Symbol ICBO IEBO hFE Testconditons VCB = 20V, IE=0 VEB = 2V, IC=0 VCE = 10 V, IC = 1 mA
Transistors IC
Min
Typ
Max 0.1 0.1
Unit iA iA
40 0.17 0.76 200 500 2 17
200 0.25 1.0 V V MHz 4 pF ns ns ns
VCE(sat) IC = 10mA , IB = 1mA VBE(sat) IC = 10mA , IB = 1mA fT Cre ton toff tstg Refer to the measurment circuit VCB = 10 V, IE = -1 mA, f = 200 MHz VCB = 10 V, IE = -1 mA, f = 10.7 MHz
15 7
hFE Classification
Marking Rank hFE P 40 80 DV Q 60 120 R 90 200
2
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