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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD425 2SD426 DESCRIPTION With TO-3 package Complement to type 2SB555/556 High power dissipation APPLICATIONS Power amplifier applications Recommended for high-power high-fidelity audio frequency amplifier output stage PINNING(see Fig.2) PIN 1 2 3 Base Emitter DESCRIPTION Absolute maximum ratings(Ta=ae ) SYMBOL PARAMETER VCBO TOR NDU ICO E SEM ANG INCH CONDITIONS VALUE 140 2SD425 Collector-base voltage Open emitter 2SD426 2SD425 120 140 Collector-emitter voltage 2SD426 Open base 120 Open collector 5 12 12 TC=25ae 100 150 -65~150 Emitter-base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature Collector Fig.1 simplified outline (TO-3) and symbol UNIT V VCEO V VEBO IC IE PC Tj Tstg V A A W ae ae Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER CONDITIONS 2SD425 2SD426 SYMBOL MIN TYP. MAX UNIT 2SD425 V(BR)CEO Collector-emitter breakdown voltage 2SD426 IC=0.1A ;IB=0 140 V 120 V(BR)EBO Emitter-base breakdown voltage IE=10mA ;IC=0 5 V 2SD425 VCEsat Collector-emitter saturation voltage 2SD426 IC=7A; IB=0.7A 3.0 IC=6A; IB=0.6A V VBE Base-emitter on voltage IC=7A ; VCE=5V 2.5 V ICBO IEBO hFE fT TOR NDU ICO E SEM ANG INCH Collector cut-off current VCB=50V; IE=0 Emitter cut-off current VEB=5V; IC=0 DC current gain IC=2A ; VCE=5V 40 Transition frequency IC=2A ; VCE=5V 5 0.1 mA 0.1 mA 140 MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD425 2SD426 TOR NDU ICO E SEM ANG INCH Fig.2 outline dimensions (unindicated tolerance:A 0.1mm) 3 |
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