|
If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
Datasheet File OCR Text: |
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD820 DESCRIPTION With TO-3 package High voltage ,high speed Low collector saturation voltage APPLICATIONS For color TV horizontal output applications PINNING(see fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=ae ) SYMBOL VCBO VCEO VEBO IC IE PC Tj Tstg PARAMETER TOR NDU ICO E SEM ANG INCH CONDITIONS VALUE 1500 600 5 Collector-base voltage Open emitter Collector-emitter voltage Open base Emitter-base voltage Open collector Collector current Emitter current Collector power dissipation Junction temperature Storage temperature TC=25ae 5 -5 50 150 -65~150 UNIT V V V A A W ae ae Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN TYP. 2SD820 SYMBOL MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A; IB=0 600 V VCEsat Collector-emitter saturation voltage IC=4 A;IB=0.8 A 3.0 5.0 V VBEsat Base-emitter saturation voltage IC=4 A;IB=0.8 A 1.5 V ICBO Collector cut-off current VCB=500V;IE=0 10 |I A IEBO Emitter cut-off current VEB=5V; IC=0 1 mA hFE DC current gain IC=1A ; VCE=5V 8 20 COB fT tf TOR NDU ICO E SEM ANG INCH Output capacitance IE=0; VCB=10V;f=1MHz 165 Transition frequency IC=0.1A ; VCE=10V 3 Fall time ICP=4A ;IB1=0.8A 0.5 1.0 pF MHz |I s 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD820 TOR NDU ICO E SEM ANG INCH Fig.2 Outline dimensions 3 |
Price & Availability of 2SD820 |
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |